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Keywords:

  • silicon;
  • III-V compound semiconductor;
  • gallium antimonide;
  • scanning tunneling microscopy;
  • non-contact atomic force microscopy

Abstract

The growth process and morphology of three-dimensional GaSb islands grown on a Ga/Si(111)-√3 × √3 reconstructed surface have been studied by ultrahigh-vacuum scanning tunneling microscopy and non-contact atomic force microscopy. Faceted GaSb islands with a density of 1011 cm−2 are formed on Ga/Si(111) in multilayer growth at 350 °C. Hexagonal- and pyramid-shaped islands are formed at 400 °C. Dome-shaped islands, which are similar to the islands grown on clean Si(111), are only formed at 450 °C. The growth morphology of GaSb islands varies depending on the atomic species terminated on Si(111) and the growth temperature. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)