Electron-beam incident-angle- resolved cathodoluminescence studies on bulk ZnO crystals

Authors

  • Takeyoshi Onuma,

    Corresponding author
    1. Department of Liberal Arts, Tokyo National College of Technology, 1220-2 Kunugida, Hachioji, Tokyo 193-0997, Japan
    2. Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan
    • Phone/Fax: +81 42 668 5153
    Search for more papers by this author
  • Tomohiro Yamaguchi,

    1. Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan
    Search for more papers by this author
  • Tohru Honda

    1. Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan
    Search for more papers by this author

Abstract

Electron-beam incidence-angle-resolved cathodoluminescence (IAR-CL) measurements on ZnO single crystals were demonstrated as an alternative way for the depth-resolved cathodoluminescence (CL) study by scanning acceleration voltage of the electron-beam. Incidence-angle dependent near-band-edge CL intensities were well reproduced by analyses considering a radiation pattern, an expansion of the electron-beam irradiation area, and an internal absorption factors. The quantitative agreement between the experimental and simulated results indicates that the IAR-CL technique is suitable for practical use in the depth-resolved CL study of device structures (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ancillary