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Keywords:

  • InAs/GaSb;
  • type-II strained layer superlattice;
  • (111) GaSb;
  • IR detection

Abstract

We report on the detailed radiometric characterization of the mid-wave infrared InAs/GaSb type-II strained layer superlattice detectors grown on GaSb (111) substrate. A red shift of 1.7 μm (at 295 K) was observed with respect to a similar detector grown on GaSb (100) substrate. We have measured, at 295 K and λ100% cut-off = 5.6 μm, a dark current density of 0.53 A/cm2 (at -50 mV) and a Johnson noise limited D* of 8.5 x 109Jones, which are superior values to state-of-the-art T2SL detectors with the same (pin) design grown on conventional GaSb (100) substrates and operating in a similar wavelength range. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)