• InAlN/GaN;
  • GaN on Si;
  • HEMT;
  • high voltage


InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a high breakdown voltage is reported. The observed off-state breakdown voltage was over 550 V and the specific on-state resistance was 0.7 mΩcm2 in the fabricated device with the spacing between the gate and drain (Lgd) of 8 µm. After the measurement, the device was found not to be broken when it was observed by an optical microscope. The off-state breakdown voltage might be about 550 V in the device with Lgd of 5 µm, because the increase of the off-state leakage current was observed at the drain voltage of 550 V. If the off-state breakdown voltage was proportional to Lgd, the speculated off-state breakdown voltage from this result was 880 V in the device with Lgd of 8 µm. Therefore, InAlN/GaN HEMTs have potential for application as power electronics devices. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)