High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE



Intermediate band solar cells have attracted significant interest as a possible means of achieving high conversion efficiency. Under optimized growth parameters, we successfully achieve a high density of uniform InAs QDs grown on various matrixes by molecular beam epitaxy. Incorporating N atoms into GaAs and AlGaAs barriers effectively compensates the internal compressive strain and avoids formation of dislocations and defects. The 50 stacking of high density and uniform InAs QDs was demonstrated without detectable dislocations using 26 nm GaNAs as a barrier. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)