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Keywords:

  • tunnel diode;
  • transfer matrix;
  • InAs/GaSb heterostructure;
  • heterostructure backward diode;
  • tunneling FET

Abstract

A numerical model that accurately describes interband tunneling in backward diodes and broken-gap tunnel diode structures based on the InAs/GaSb material system is described. The model applies the transfer matrix method to discretized bias-dependent energy band profiles to calculate the transmission probability for tunneling. The model has been validated against experimental results, with good agreement in the current-voltage and curvature coefficient having been obtained for a range of hetero-structure backward diode and interband tunnel diode structures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)