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Keywords:

  • InP;
  • bipolar transistor;
  • HBT;
  • high-frequency devices

Abstract

InGaAs/InP DHBTs are fabricated using electron-beam lithography to define the emitter and base mesas. Emitter mesas 150 nm wide, and base mesas with < 25 nm misalignment to the emitter have been developed. Emitter contacts are prepared through blanket, refractory metal evaporation to obtain emitter contact resistivity ρex = 2 Ω·µm2. This low record resistivity, combined with the narrow emitter and base mesas, enables device RF performance of simultaneous fτ and fmax of 530 GHz and 750 GHz, respectively, at a power density of > 40 mW/µm2. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)