Self-organization of iridium nanoislands for GaN applications



This work concerns research on iridium nanoislands morphology primarily attributed to internal quantum efficiency enhancement in GaN emitters such as quantum wells or nanowires. The self-organized nanoislands were formed by an annealing process after the deposition of Ir thin film on silicon substrate. The nanoislands have been found to be have the shape of compressed half-spheres as high as 30 nm and less than 100 nm in diameter. The optical spectroscopy, scanning electron as well as atomic force microscopy were employed to study the evolution of the prepared nanostructures (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)