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Abstract

This issue of physica status solidi contains papers presented at the E-MRS Spring Meeting Symposium F on nitrides held in Nice, France, May 2011.

Group III nitrides are semiconductors which dramatically developed at the very end of the twentieth century thanks to simultaneous advances in knowledge, industrial, technological and scientific fields, all of which are related to information technologies and concerned with energy saving. Although more than two decades have passed since the first successful operation of optical and electron devices based on group III nitrides, there are still many reports describing technological difficulties related to the fabrication of these devices, to their modeling, to their characterization. The purpose of the Symposium F was to provide an active forum for scientists and engineers from around the world to meet and exchange their experiences. E-MRS held in Nice, in 2011 was an ideal venue for hosting this symposium at its Palace of Congress (Acropolis).

We are delighted that the symposium was attended by more than 180 participants from countries in Asia, Europe, America and Africa. The program comprised a plenary talk by Dr. Connie Chang Hasnain, University of California at Berkeley, 20 invited talks, 66 oral presentations and 93 posters.

We deeply express our gratitude to the plenary and invited speakers and to all members who participated in this symposium.

The series of scientific events organized under the umbrella of E-MRS, and initiated in Strasbourg in 1996 will continue to be held in 2013 for again a successful symposium (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)