SEARCH

SEARCH BY CITATION

Keywords:

  • InAlN/GaN;
  • HFET;
  • carrier density;
  • dislocation;
  • maximum output power density

Abstract

Unfortunately, the Fig. 2 in the right column on page 856 was misplaced and should be corrected. The correct figure is shown here (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)