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Keywords:

  • vacancy trapping;
  • interstitial trapping;
  • Si;
  • doping;
  • low resistivity;
  • rapid thermal processing

Abstract

The resistivity change of low resistivity Si substrates by rapid thermal processing (RTP) and subsequent low tem-perature annealing is reported. The observed resistivity increase after RTP can be explained by dopant deactivation due to trapping by dopant atoms of intrinsic point defects created during the high temperature step. Similar dopant deactivation is observed during growth of low resistivity single crystals or epitaxial layers.

The stability of the intrinsic point defect-dopant clusters and the recovery of resistivity is studied by low temperature anneals ranging from 300 to 650 °C. Results are presented on As (3-5 mΩcm), P (1-2 mΩcm), (17-18 mΩcm) and B (16-17 mΩcm) doped Si substrates. The observations are explained on the basis of a continuum model for intrinsic point point defect trapping by dopants. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)