• GaSb;
  • quantum dot;
  • droplet epitaxy;
  • post-growth annealing


We studied the effects of post-growth annealing on the optical properties of GaSb quantum dots (QDs). We grew GaSb QDs in GaAs by droplet epitaxy and carried out a post-growth annealing at the temperature Ta of 700 ∼ 900 ºC. The photoluminescence (PL) spectra from the GaSb QDs were found at about 1.1 ∼ 1.3 eV. The PL peak shifts toward a higher energy with increasing Ta. For the samples post-annealed at low temperatures, the PL intensity significantly decreases as the measurement temperature T increases. In contrast, the intensity reduction is relatively low for the high temperature annealed samples, indicating that the annealing process improves the crystalline quality of the sample. We also compared the integrated PL intensity to a model with a loss mechanism and found that the post-growth annealing drastically decreases non-radiative centers in the sample. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)