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Keywords:

  • junctionless channel;
  • GAA RADFET;
  • threshold voltage;
  • numerical simulation

Abstract

This paper is devoted to the presentation of a quantitative analysis of the Junctionless Gate All Around RADFET (JL GAA RADFET) dosimeter, where the numerical simulation has been carried out using the Atlas 3-D simulator. The impact of the total dose, alternative gate materials and the channel doping on the threshold voltage of the JL GAA RADFET is addressed. The obtained results have indicated a significant improvement in the subthreshold parameters when compared to the conventional GAA RADFET dosimeter. Therefore, the implementation of junctionless-based sensors in the near future can provide more accurate results with low costs, in addition to alleviating many difficulties in the measurement procedure. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)