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Keywords:

  • field-effect transistor;
  • organic complex crystal;
  • growth temperature;
  • channel polarity;
  • ambipolar charateristics

Abstract

Field-effect transistors (FETs) based on crystals of tetramethyltetraselenafulvalene (TMTSF)-tetracyanoquino-dimethane (TCNQ) complex were fabricated by solution process. TMTSF-TCNQ crystals grown at low (2 °C) and high (40 °C) temperatures were different in their shape, color, transparency, and crystal structure. Channel polarity of the fabricated FETs was found to be dependent on the growth temperature of the complex crystals. Namely, the FETs with the high- and low-temperature grown crystals showed p- and n-type characteristics, respectively. Furthermore, ambipolar FET characteristics were obtained when room-temperature grown crystals were used. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)