Solid phase epitaxial growth (SPEG) is a common tech¬nique used in the manufacturing processes of MOSFET technology. Even though a relatively broad knowledge is found for silicon, there is a greater uncertainty when it comes to germanium, which importance is arising in the last generation of microelectronic devices. To simu¬late this process, the need of a model which reproduces anisotropic growth and is able to detect and place twin defects becomes relevant, opening the possibility to sim¬ulate the interaction of different crystallographies, as it has been observed to be an important factor for some orientations, justifying by this mechanism experimental results.
We present a Lattice Kinetic Monte Carlo (LKMC) model of Ge which is able to give an explanation of the different anisotropy effects in the recrystallization of substrate wafers through a defect formation formalism. An agreement between experimental observations and simulations is found by comparing regrowth velocities for different samples at different anneal conditions with LKMC simulations that consider twin defect formation for specific directions. Different regrowth velocities are found for distinct orientations of a solid phase epitaxial growth process within the annealed sample.
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