XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma treatments

Authors

  • Yukihiro Tsuji,

    Corresponding author
    1. Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa 244-8588, Japan
    2. New Industry Creation Hatchery Centre, Tohoku University, Aza-Aoba, 6-6-10, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
    • Phone: +81 45 853 7308, Fax: +81 45 852 2913

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  • Tadashi Watanabe,

    1. Sumitomo Electric Device Innovations, Inc., 1, Kanai-cho, Sakae-ku, Yokohama, Kanagawa 244-0845, Japan
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  • Kenichi Nakamura,

    1. Plant & Production System Engineering Division, Sumitomo Electric Industries, Ltd., 1-1-1, Koyakita, Itami, Hyogo 664-0016, Japan
    2. New Industry Creation Hatchery Centre, Tohoku University, Aza-Aoba, 6-6-10, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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  • Isao Makabe,

    1. Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa 244-8588, Japan
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  • Ken Nakata,

    1. Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa 244-8588, Japan
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  • Tsukuru Katsuyama,

    1. Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa 244-8588, Japan
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  • Akinobu Teramoto,

    1. New Industry Creation Hatchery Centre, Tohoku University, Aza-Aoba, 6-6-10, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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  • Yasuyuki Shirai,

    1. New Industry Creation Hatchery Centre, Tohoku University, Aza-Aoba, 6-6-10, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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  • Shigetoshi Sugawa,

    1. New Industry Creation Hatchery Centre, Tohoku University, Aza-Aoba, 6-6-10, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
    2. Graduate School of Engineering, Tohoku University, Aza-Aoba, 6-6-11, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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  • Tadahiro Ohmi

    1. New Industry Creation Hatchery Centre, Tohoku University, Aza-Aoba, 6-6-10, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Abstract

In order to improve reliability and yield of gallium nitride (GaN) devices, we have developed the formation of an ultra-clean GaN surface and an interface of a passivation layer. The residue or termination materials on the GaN surface were analyzed after wet-chemical and plasma treatments. In detail, the terminated-bonding state of the GaN surface has been characterized by X-ray photoelectron spectroscopy. After conventional diluted HF treatment, the GaN surface is still terminated by oxygen. (NH4)2Sx and SiH4 plasma treatments are required for the efficient removing of oxygen-termination of the GaN surface. However, contaminants, except for nitrogen and gallium, are not removed from the GaN surface completely. For example, silicon is deposited on the GaN surface after the SiH4 plasma treatment, and atoms of sulfur are terminated on the GaN surface after the (NH4)2Sx treatment. However, we consider that their materials should be removed before the passivation film deposition. Therefore, the ultra-clean interface of the passivation layer and the GaN surface were reported in this paper. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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