Temperature dependence of forward I -V in SiC pin diodes considering stacking faults



Temperature dependence of forward I-V properties in SiC pin diodes with relatively low sustaining voltage is investigated. Decrease of forward voltage and differential resistance with increase of temperature is characterized by device simulation considering stacking faults. Band structure in stacking faults is suggested to be type-I quantum well due to strain by the difference of lattice interval in basal plane. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)