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Keywords:

  • carbon nanotube;
  • thin-film transistor;
  • n-type;
  • chemical doping;
  • flexible electronics

Abstract

We fabricated flexible n -type carbon nanotube thin-film transistors on a plastic film by a simple transfer process and a solution-based chemical doping technique with polyethyleneimine (PEI). There exists an optimal PEI concentration, which is determined by doping level and charge accumulation in the PEI layer. A high electron mobility of 70 cm2/Vs was achieved with an on/off ratio of 105 in ambient air. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)