Band structures of Si/InGaP heterojunctions by using surface-activated bonding

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Abstract

The band structure of p-Si/n-InGaP heterojunctions fabricated by using surface-activated bonding (SAB) was investigated by measuring their current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The I-V characteristics of p-Si/n-InGaP junctions showed rectifying properties similarly to p-Si/n-GaAs junctions. The conduction band discontinuity of the p-Si/n-InGaP junctions was determined to be 0.41 eV from C-V measurements, which indicated that the Si/InGaP junctions revealed the type-I band line-up in contrast to the Si/GaAs junctions. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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