Short-channel, high-mobility organic thin-film transistors with alkylated dinaphthothienothiophene

Authors

  • Masatoshi Kitamura,

    Corresponding author
    1. Graduate School of Engineering, Kobe University, 1-1, Rokkodai-cho, Nada, Kobe 657-8501, Japan
    2. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    • Phone: +81-78-803-6072, Fax: +81-78-803-6072

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  • Yasutaka Kuzumoto,

    1. Graduate School of Engineering, Kobe University, 1-1, Rokkodai-cho, Nada, Kobe 657-8501, Japan
    2. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    3. Corporate Research and Development Division, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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  • Yasuhiko Arakawa

    1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    2. Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro, Tokyo 153-8505, Japan
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Abstract

Short-channel, high-mobility organic transistors have been demonstrated using alkylated dinaphthothienothiophene. The field-effect mobility for a transistor with a channel length of 2 mm was 1.46 cm2/Vs at operation of –15 V. The transconductance of the transistor reached to 500 µS/mm, which is one of the highest values in p-channel organic transistors. The high mobility in short-channel transistors is attributed to low contact resistance caused by Au/AuNi electrodes modified with pentafluorobenzenethiol. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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