In-situ annealing effect of zinc-blende MnAs thin films grown on InP substrates



MnAs thin films were grown by molecular beam epitaxy on InP substrates. The samples were in-situ annealed at different temperatures of 340 °C, 380 °C and 420 °C in an As4 atmosphere. High-resolution X-ray diffraction (XRD) measurements showed that zinc-blende type (zb-) and NiAs type (n-) MnAs co-exist. The XRD peak intensities of zb-MnAs increased with annealing temperatures up to 380 °C. Also, the in-plane XRD results showed that the intensities of zb-MnAs (400) and (220) increased after annealing. On the other hand, the peak intensities of n-MnAs decreased with temperature up to 380 °C. The possible transition between zinc-blende and hexagonal MnAs is estimated to be a temperature of 380 °C. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)