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Keywords:

  • oxides;
  • wide bandgap semiconductor;
  • XRD;
  • TEM

Abstract

(-201)-oriented beta gallium oxide (β-Ga2O3) thin films were grown on yttrium-stabilized zirconia (YSZ) substrates using a mist chemical vapor deposition (CVD) method. The lowest full-width at half maximum value in ω-scan X-ray diffraction was 0.50°, obtained for the growth temperature of 650 °C on a YSZ(100) substrate. Observation by a secondary electron microscope (SEM) revealed flat surface including large-scale precipitates. Electron diffraction patterns suggested that thin films basically possess β-type crystal structure though crystal precipitates were formed by poly-crystal. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)