Improved temperature characteristics of highly stacked InGaAs/GaAs quantum dot lasers

Authors

  • Fumihiko Tanoue,

    Corresponding author
    1. Graduate School of System Design, Tokyo Metropolitan University, 6-6 Asahigaoka, Hino, 191-0065 Tokyo, Japan
    2. National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, 184-8795 Tokyo, Japan
    • Graduate School of System Design, Tokyo Metropolitan University, 6-6 Asahigaoka, Hino, 191-0065 Tokyo, Japan

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  • Hiroharu Sugawara,

    1. Graduate School of System Design, Tokyo Metropolitan University, 6-6 Asahigaoka, Hino, 191-0065 Tokyo, Japan
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  • Kouichi Akahane,

    1. National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, 184-8795 Tokyo, Japan
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  • Naokatsu Yamamoto

    1. National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, 184-8795 Tokyo, Japan
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Abstract

Up to 24-stacked-layer In0.4Ga0.6As/GaAs quantum dot laser diodes were fabricated using ultrahigh-rate molecular beam epitaxy. The operation of these devices was investigated between 298 and 353 K. The characteristic temperatures for the threshold currents improved from 72 K to 80 K with an increase in the stacking number from 12 to 19. The gain curves were also evaluated at 298 K for laser diodes with various cavity lengths. The obtained saturated modal gain increased with increasing stacking number. The laser diode with a stacking number of 24 exhibited the highest saturated modal gain at 155 cm-1. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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