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Keywords:

  • nanostructures;
  • migration enhanced epitaxy;
  • molecular beam epitaxy;
  • selective epitaxy;
  • semiconducting indium compounds

Abstract

We present a study of the site-controlled nucleation of InAs quantum dots on faceted GaAs microstructures grown by migration enhanced epitaxy and demonstrate single quantum dot emission. Well defined GaAs templates with facets mostly belonging to the crystal plane families {01n }, {11n } and (001) are realized. Subsequent InAs nucleation occurs on the plane with the highest growth rate, and allows a precise positioning of optical active InAs quantum dots. The site-controlled quantum dots reveal excitonic and biexcitonic transitions with narrow linewidths. The results are promising for the realization of single photon sources from site-selected InAs QDs on faceted GaAs microstructures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)