Dislocations related with the pore on P-rich InP wafer



The two dimension distributions of dislocation and thermal stress of 3-inch diameter stoichiometric and P-rich InP wafers are investigated, and an analysis of the relation between the two distributions is given. As a result, in stoichiometric and P-rich InP wafers, both the dislocation and thermal stress distributions are found to be circular ring shape, and where the thermal stress is stronger, the etch-pits density (EPD) is higher, too. On the P-rich wafers, there are some pores where EPD is much higher than other areas, around most pores, thermal stress is very strong, but around a small number of pores, the thermal stress is weaker as a contrary, that may be because the residual thermal stress can be released along the pores penetrating through the ingot during ingot annealing. Thermal stress is one of the main reasons which can contribute to dislocation. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)