Surface morphology of multilayer graphene synthesized directly on silicon dioxide

Authors

  • Kenta Katakura,

    1. Division of Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
    2. Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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  • Hikari Tomori,

    1. Division of Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
    2. Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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  • Youiti Ootuka,

    1. Division of Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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  • Akinobu Kanda

    Corresponding author
    1. Division of Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
    2. Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
    • Phone: +81 29 853 5081, Fax: +81 29 853 4345

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Abstract

We report the surface morphology of multilayer graphene synthesized directly on a SiO2/Si substrate through graphitization of amorphous carbon with Ni catalyst. We demonstrate that the disorder-induced Raman D peak is effectively suppressed when the Ni catalyst layer is covered with Au layer. Scanning electron microscope observation reveals that the Au layer prevents granulation of Ni after the annealing process, leading to the formation of continuous graphene with less holes. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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