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Keywords:

  • AlGaN;
  • heterojunction;
  • HEMT;
  • 2DEG;
  • GOx

Abstract

Materials based on gallium nitride are characterized by a wide bandgap. The excellent chemical, physical and electronic properties give them a place in various fields: electronics, optoelectronics, photovoltaics, military, biological and medical. The use of biosensors based III-N has been confirmed for the detection of biological substances in cells, blood or in solutions. This effect of detection results in various chemical and electric changes in a medium that is contacted with the devices without gate metallization of a high electron mobility transistor (HEMT). HEMT sensors can thus be used to detect gases, ions, pH values, proteins and DNA. In this work, we are interested in HEMT-based heterostructure AlGaN/GaN used in the construction of biosensors. The principle of operation of the HEMT is based on the properties of a high-mobility two-dimensional gas (2DEG) and high-speed saturation channel of a 2DEG AlGaN HEMT is very close to the surface that is very sensitive to absorption of analytes. We use this microsystem for detection of substances found in biological solutions. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)