Void formation during GaN MOVPE on Si (111) employing low temperature AlN interlayers

Authors

  • Cai Liu,

    Corresponding author
    1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8904 Tokyo, Japan
    • Phone: +81 358 416 753, Fax: +81 358 416 027

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  • Hongbo Wang,

    1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8904 Tokyo, Japan
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  • Hassanet Sodabanlu,

    1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8904 Tokyo, Japan
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  • Masakazu Sugiyama,

    1. Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656 Tokyo, Japan
    2. Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656 Tokyo, Japan
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  • Yoshiaki Nakano

    1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8904 Tokyo, Japan
    2. Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656 Tokyo, Japan
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Abstract

During the growth of GaN on Si (111), voids were found in GaN layers in between AlN interlayers. Void formation mechanism is the decomposition of GaN in H2. Void formation process is carefully studied. It is clarified that voids are formed during the period between the growth of two neighbouring GaN layers, after the growth of AlN interlayer between them. There are some openings in AlN interlayers and they act as the pass for H2 to react with GaN. NH3 partial pressure, temperature, etching time, and conditions such as thickness of AlN interlayers can be utilized to tune the volume, size and shape of the voids. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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