Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

Authors

  • Jinkwan Kwoen,

    Corresponding author
    1. Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    • Phone: +81 3 5452 6291, Fax: +81 3 5452 6247

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  • Katsuyuki Watanabe,

    1. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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  • Yasutomo Ota,

    1. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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  • Satoshi Iwamoto,

    1. Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    2. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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  • Yasuhiko Arakawa

    1. Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    2. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Abstract

We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g(2)(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future ‘on-silicon’ quantum optical circuits. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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