• silicon nanoparticles;
  • SiOx matrix;
  • carrier injection;
  • Poole-Frenkel and tunnel emissions


The electrical properties of silicon rich oxide (SRO) layers integrated in metal-oxide-semiconductor device are analysed. The layers are deposited using the magnetron co-sputtering of a pure SiO2 and Si targets under a pure argon plasma. Each SRO layer embedding silicon nanoparticles (Si-np-SiOx) was subsequently submitted to an optimized annealing treatment. Three types of Al/Si-np-SiOx/p-Si devices are fabricated with different incorporated silicon excesses (9, 11, or 16 at.%) in the active layer. Analysis of static electrical properties of the devices showed a semi-resistive behaviour for each device. Carrier injection into the SiOx matrix in terms of Poole-Frenkel and Fowler-Nordheim mechanisms is analysed in relation with the incorporated silicon excess. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)