Erratum: Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply

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Errata

This article corrects:

  1. Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply Volume 10, Issue 11, 1365–1368, Article first published online: 23 September 2013

Abstract

Due to a technical mistake, Figures 1 and 3 in this paper [1] were displayed erroneously. Please find here the correct versions of these figures. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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