physica status solidi (c)

Cover image for Vol. 10 Issue 1

Special Issue: International Conference on Extended Defects in Semiconductors (EDS 2012), see further papers in Phys. Status Solidi A 210, No. 1 (2013).

January 2013

Volume 10, Issue 1

Pages 1–145

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      Cover Picture: Phys. Status Solidi C 1/2013

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201390000

      Thumbnail image of graphical abstract

      J. Rabier, A. Montagne, J. M. Wheeler, J. L. Demenet, J. Michler, and R. Ghisleni (pp. 11–15) report on the plastic deformation of silicon micropillars oriented for single slip (123 orientation). A low strain rate was used in order to probe plastic deformation in a large range of temperature for pillars having the same diameter. The cover figure shows deformation features imaged by scanning electron microscopy (SEM) for different deformation temperatures. The amount of plasticity obtained before failure increases significantly with temperature. In situ SEM experiments allowed us to relate microstructural features appearing in the images to the mechanical data from the recorded stress–strain curves.

  2. Issue Information

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      Issue Information: Phys. Status Solidi C 1/2013

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201390001

  3. Editorial

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      NEWS from pss in 2013 (pages 1–2)

      Sabine Bahrs, Ingeborg Stass and Stefan Hildebrandt

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201360152

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
  5. Preface

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      Extended Defects in Semiconductors (pages 7–9)

      Philomela Komninou

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201360154

  6. Invited Article

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    1. Silicon micropillars: high stress plasticity (pages 11–15)

      J. Rabier, A. Montagne, J. M. Wheeler, J. L. Demenet, J. Michler and R. Ghisleni

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssc.201200546

  7. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    1. Modification of dislocation PL centres due to misfit of bonded Si wafers (pages 16–19)

      E. Steinman, A. Tereshchenko, O. Kononchuk and V. Vdovin

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200386

    2. Energetic spectra of dislocation networks produced by hydrophilic bonding of silicon wafers (pages 20–23)

      I. Kolevatov, M. Trushin, O. Vyvenko, M. Kittler and O. Kononchuk

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200396

    3. Multicrystalline silicon production for solar cell applications by continuous induction melting in cold crucible (pages 24–27)

      Sergey Beringov, Anatoly Shkulkov, Yuriy Cherpak, Maryna Vlasiuk, Timur Vlasenko, Iryna Buchovska, Vitaly Kveder and Maria Khorosheva

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200401

    4. Dislocation formation during laser processing of silicon solar cell materials (pages 28–31)

      Y. Weng, B. Kedjar, K. Ohmer, J. R. Köhler, J. H. Werner and H. P. Strunk

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssc.201200548

    5. Electrons on dislocations (pages 40–43)

      Manfred Reiche, Martin Kittler, Michael Krause and Hartmut Übensee

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssc.201200537

    6. Stress effect on the orientation and the arrangement of H-platelets (pages 44–47)

      Maxime Vallet, Shay Reboh, Marie-France Beaufort, Jean Grilhé and Jean François Barbot

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200365

    7. ZnO nanoparticle formation in Zn+ ion implanted SiO2/Si structure (pages 48–51)

      Vladimir Privezentsev, Vaclav Kulikauskas, Anatoly Bazhenov and Eduard Steinman

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200539

    8. X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers (pages 52–55)

      N. Burle, S. Escoubas, E. Kasper, J. Werner, M. Oehme and K. Lyutovich

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200544

    9. Dislocation luminescence in highly doped degenerated germanium at room temperature (pages 56–59)

      Tzanimir Arguirov, Oleg Vyvenko, Michael Oehme, Jörg Schulze and Martin Kittler

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200395

    10. Diffusion of implanted nitrogen in germanium (pages 60–63)

      Dimitrios Skarlatos, Mario Barozzi, Massimo Bersani, Nikos Z. Vouroutzis and Vassilios Ioannou-Sougleridis

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssc.201200553

    11. Dislocations in 4H- and 3C-SiC single crystals in the brittle regime (pages 64–67)

      Jean-Luc Demenet, Madyan Amer, Christophe Tromas, Dominique Eyidi and Jacques Rabier

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200372

    12. Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC:H and c -AlN thin films (pages 68–71)

      J. Andres Guerra, Felix Benz, A. Ricardo Zanatta, Horst P. Strunk, Albrecht Winnacker and Roland Weingärtner

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200394

    13. Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism (pages 72–75)

      Maya Marinova, Alkyoni Mantzari, Ariadne Andreadou, Jean Lorenzzi, Gabriel Ferro and Efstathios K. Polychroniadis

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200399

    14. Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals (pages 76–79)

      I. Ratschinski, H. S. Leipner, F. Heyroth, W. Mook, J. Michler, W. Fränzel, G. Leibiger and F. Habel

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200388

    15. Mechanism of Si outdiffusion in plasma-assisted molecular beam epitaxy of GaN on Si (pages 80–83)

      A. Adikimenakis, K. E. Aretouli, K. Tsagaraki, M. Kayambaki and A. Georgakilas

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200416

    16. Dissociation of the 60° basal dislocation in wurtzite GaN (pages 84–88)

      I. Belabbas, J. Chen, Ph. Komninou and G. Nouet

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200464

    17. Mechanical stress control in GaN films on sapphire substrate via patterned nanocolumn interlayer formation (pages 89–92)

      Dmitry Artemiev, Vladislav Bougrov, Maxim Odnoblyudov and Alexey Romanov

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200500

    18. N- and Ga-K-edge XAFS study of the effect of annealing on In implanted GaN (pages 93–96)

      M. Katsikini, F. Pinakidou and E. C. Paloura

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200543

    19. A quantum dot nucleated on the edge of a threading dislocation: elastic and electric field effects (pages 97–100)

      Grzegorz Jurczak, Toby D. Young and Paweł Dłużewski

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200551

    20. Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE (pages 101–104)

      M. Aziz, R. H. Mari, J. F. Felix, A. Mesli, D. Taylor, M. O. Lemine, M. Henini, R. Pillai, D. Starikov, C. Boney and A. Bensaoula

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssc.201200409

    21. Structural and electronic properties of InGaN/GaN nanowires by the use of EELS (pages 105–108)

      Maria-Marianna Soumelidou, Joseph Kioseoglou, Holm Kirmse, Philomela Komninou and Theodoros Karakostas

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssc.201200550

    22. How to describe concentration quenching in rare earth doped semiconductors (pages 109–112)

      Felix Benz, J. Andrés Guerra, Ye Weng, Roland Weingärtner and Horst P. Strunk

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200357

    23. Extended deep-level defects in MBE-grown p-type CdTe layers (pages 113–116)

      Karolina Olender, Tadeusz Wosinski, Andrzej Makosa, Piotr Dluzewski, Valery Kolkovsky, Zbigniew Tkaczyk and Grzegorz Karczewski

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200402

    24. Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers (pages 121–124)

      Olha Boyko, Yaroslav Shpotyuk and Jacek Filipecki

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200406

    25. Characterization of high quality Cu(In,Ga)Se2 thin films prepared by rf-magnetron sputtering (pages 129–132)

      Idris Bouchama, Kamal Djessas, Abdeslam Bouloufa and Jean-Luc Gauffier

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200411

    26. A 2D dislocation dynamic approach to simulating dimensional change in irradiated graphite using anisotropic strain theory (pages 133–136)

      Philippa Young, Glen Sheehan, James Boone and Malcolm I. Heggie

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssc.201200540

    27. Electrical characteristics of ALD-deposited Al2O3 thin films on p-type germanium substrates (pages 137–140)

      M. Botzakaki, A. Kerasidou, N. Xanthopoulos, D. Skarlatos, S. Kennou, S. Ladas, S. N. Georga and C. A. Krontiras

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssc.201200400

    28. Evaluation of residual strain in directional solidified mono-Si ingots (pages 141–145)

      Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto and Takashi Sekiguchi

      Version of Record online: 19 NOV 2012 | DOI: 10.1002/pssc.201200884

SEARCH

SEARCH BY CITATION