physica status solidi (c)

Cover image for Vol. 10 Issue 11

Special Issue: 40th International Symposium on Compound Semiconductors (ISCS 2013)

November 2013

Volume 10, Issue 11

Pages 1337–1647

Issue edited by: Hiroshi Yamaguchi, Kazuhide Kumakura

  1. Cover Picture

    1. Top of page
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    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
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      Cover Picture: Phys. Status Solidi C 11/2013

      Article first published online: 13 NOV 2013 | DOI: 10.1002/pssc.201370022

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      GaN/AlN quantum dots are promising emitters for high temperature operation devices because of their large exciton binding energy and band-offsets. The incorporation of GaN quantum dots in AlN cavities exhibiting high quality factors and small mode volumes is of major interest for the observation of cavity quantum electrodynamic effects at high temperature. Yet, the realization of such nanocavities remains challenging due to the large sensitivity of scattering losses related to fabrication imperfections and to the difficulty to create a sufficient-depth air-gap below the cavity to efficiently confine the light. In their paper, Sergent et al. on pp. 1517–1520 detail a newly developed layer transfer technique to circumvent such limitations and allow for the fabrication of AlN ladderstructure photonic crystal nanocavity embedding GaN QDs. They show how both the fabrication technique and the nanocavity design can improve the experimental quality factor, and they report on the highest quality factor obtained in an active group-III nitride semiconductor nanocavity, Q = 6900. The cover page shows a schematical view of the final nanobeam cavity structure and a micro-photoluminescence spectrum of the fundamental, first-order and second-order cavity modes that exhibit high quality factors.

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    9. Contributed Articles
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      Back Cover: Phys. Status Solidi C 11/2013

      Article first published online: 13 NOV 2013 | DOI: 10.1002/pssc.201370023

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      Transparent amorphous oxide semiconductor (TAOS) has been reported as a promising material for next-generation displays. Recently, Tomai et al. reported that amorphous indium tin zinc oxide (ITZO) has excellent properties such as high electron mobility, low voltage operation, and high reliability under electrical stress condition. To realize the next generation displays, high-speed operation and high reliability under various stresses are indispensable. For high-speed operation, TAOS thin-film transistors (TFTs) can be achieved by their high electron mobility. However, for high reliability, self-heating effect of TFT under voltage stress is one of the most important issues, especially in high performance TFT fabricated on a substrate with lower thermal conductivity, such as glass and polyethylene terephthalate. In their paper on pp. 1561–1564, Sergent et al. have focused on the scale dependence of self-heating effect on the reliability of ITZO TFT. As a result, they found that the heating temperature increases with increasing channel width under same voltage and current density conditions. It was also confirmed that accumulation of heating becomes evident with increasing channel width. Therefore, the reliability of the TFT with different channel scale is dicussed to clarify the influence of self-heating phenomenon on the reliability.

  3. Issue Information

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    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
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    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
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      Issue Information: Phys. Status Solidi C 11/2013

      Article first published online: 13 NOV 2013 | DOI: 10.1002/pssc.201370024

  4. Contents

    1. Top of page
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    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
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    11. Contributed Articles
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      Contents: Phys. Status Solidi C 11/2013 (pages 1337–1344)

      Article first published online: 13 NOV 2013 | DOI: 10.1002/pssc.201370025

  5. Preface

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    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
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      Compound Semiconductors (pages 1345–1352)

      Shizuo Fujita, Hiroshi Yamaguchi, Kazuhide Kumakura and Hiroshi Yamaguchi

      Article first published online: 13 NOV 2013 | DOI: 10.1002/pssc.201370026

  6. Contributed Articles

    1. Top of page
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    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
    1. Growth and related technologies

      High growth rates of AlN and AlGaN on 8″ silicon wafer using metal-organic vapor phase epitaxy reactor (pages 1353–1356)

      Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Yuichiro Kitamura, Toshiya Tabuchi and Koh Matsumoto

      Article first published online: 21 OCT 2013 | DOI: 10.1002/pssc.201300255

    2. Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate (pages 1357–1360)

      Keiichi Matsumoto, Xinxin Zhang, Yoshinori Kanaya and Kazuhiko Shimomura

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300227

    3. Broadband emission centered at ∼1 µm with a Gaussian-like spectrum by stacking In-flushed QD layers (pages 1361–1364)

      Nobuhiko Ozaki, Yuji Hino, Shunsuke Ohkouchi, Naoki Ikeda and Yoshimasa Sugimoto

      Article first published online: 2 OCT 2013 | DOI: 10.1002/pssc.201300291

    4. Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply (pages 1365–1368)

      R. Kizu, M. Yamaguchi and H. Amano

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300256

      Corrected by:

      Erratum: Erratum: Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply

      Vol. 11, Issue 1, 178, Article first published online: 2 JAN 2014

    5. Composition control of quinary GaInNAsSb alloy grown by molecular beam epitaxy (pages 1369–1372)

      Naoya Miyashita, Nazmul Ahsan, Muhammad Monirul Islam and Yoshitaka Okada

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300283

    6. Dislocations related with the pore on P-rich InP wafer (pages 1373–1376)

      Zhiguo Liu, Ruixia Yang, Fan Yang, Xiuwei Tian, Qiang Wang, Yang Wang, Xiaolan Li, Shuai Li, Jianye Yang, Huimin Shao, Yanlei Shi, Yong Kang, Xin Zhang, Huisheng Liu, Tongnian Sun and Niefeng Sun

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300277

    7. Fabrication and photoluminescence properties of high-quality ZnO film grown by solution-vaporizing MOCVD (pages 1377–1380)

      Rongbin Ye, Eriko Ohshima, Takashi Abe, Koji Ohta and Mamoru Baba

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300222

    8. (211) oriented ZnTe growth on m-plane sapphire by MBE (pages 1381–1384)

      Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo and Toshiaki Asahi

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300239

    9. First-principles study of oxygen-doping states in II-VI semiconductors (pages 1385–1388)

      Masato Ishikawa and Takashi Nakayama

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300249

    10. Deposition of AgGaTe2 on sapphire substrates by closed space sublimation (pages 1389–1392)

      Aya Uruno, Ayaka Usui and Masakazu Kobayashi

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300240

  7. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
    1. High-frequency and high-power devices

      Breakdown and dynamic effects in GaN power switching devices (pages 1393–1396)

      Joachim Würfl, Oliver Hilt, Eldad Bahat-Treidel, Rimma Zhytnytska, Przemyslaw Kotara, Olaf Krüger, Frank Brunner and Markus Weyers

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300244

  8. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
    1. High-frequency and high-power devices

      Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs (pages 1397–1400)

      Yunyou Lu, Shu Yang, Qimeng Jiang, Zhikai Tang, Baikui Li and Kevin J. Chen

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300270

    2. Comparison of 2DEG density and mobility increase by annealing AlGaN/GaN heterostructures deposited with Ti/Al, Ti/Au, V/Au, and Ni/Au (pages 1405–1408)

      Toshikazu Kojima, Hirokuni Tokuda and Masaaki Kuzuhara

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300221

    3. Temperature dependence of forward I -V in SiC pin diodes considering stacking faults (pages 1409–1412)

      K. Ohtsuka, A. Furukawa, R. Tanaka, S. Yamamoto and S. Nakata

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300230

    4. Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials (pages 1413–1416)

      Akio Nishida, Kei Hasegawa, Ryoko Ohama, Sachie Fujikawa, Shinsuke Hara and Hiroki I. Fujishiro

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300264

    5. Current conduction mechanisms and breakdown fields of AlxTiyO/n-GaAs(001) metal-insulator-semiconductor structures (pages 1417–1420)

      Toshimasa Ui, Masahiro Kudo and Toshi-kazu Suzuki

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300293

    6. Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack (pages 1421–1425)

      M. J. Anand, G. I. Ng, S. Vicknesh, S. Arulkumaran and K. Ranjan

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300219

    7. Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition (pages 1426–1429)

      Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa and Yukiharu Uraoka

      Article first published online: 25 SEP 2013 | DOI: 10.1002/pssc.201300273

    8. Photonic devices

      Improvement of operation temperature in GaAs/AlGaAs THz-QCLs by utilizing high Al composition barrier (pages 1430–1433)

      Tsung-Tse Lin and Hideki Hirayama

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300216

    9. Two-color lasing in a coupled multilayer cavity with InAs quantum dots by optical pumping (pages 1434–1437)

      Takahiro Kitada, Chiho Harayama, Ken Morita and Toshiro Isu

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300205

    10. Current injected spectrum change in flat-topped InAs/InP QD arrayed waveguide LED with different QD heights (pages 1438–1441)

      Shohei Yoshikawa, Masayuki Yamauchi, Yuta Yamamoto and Kazuhiko Shimomura

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300226

    11. Aluminium free 780 nm tapered semiconductor optical amplifiers for rubidium pumping (pages 1442–1444)

      M. Lamponi, A. Jammot, J. B. M. Lobe, Y. Robert, M. Lecomte, O. Parillaud, M. Garcia and M. Krakowski

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300251

    12. 1.9 THz selective injection design quantum cascade laser operating at extreme higher temperature above the kBT line (pages 1448–1451)

      Sasaki Miho, Tsung-Tse Lin and Hideki Hirayama

      Article first published online: 25 SEP 2013 | DOI: 10.1002/pssc.201300267

    13. Fabrication and characterization of VCSELs applying quantum well intermixing using spin-on-glass (pages 1452–1456)

      Tomohiro Akutsu, Takuya Ushio, Akihiro Matsutani and Tomoyuki Miyamoto

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300269

    14. Design of high-Q nanocavity in three-dimensional woodpile photonic crystal with vertically mirror-symmetric structure (pages 1457–1460)

      Jiapeng Fu, Aniwat Tandaechanurat, Satoshi Iwamoto and Yasuhiko Arakawa

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300282

    15. Improved temperature characteristics of highly stacked InGaAs/GaAs quantum dot lasers (pages 1461–1464)

      Fumihiko Tanoue, Hiroharu Sugawara, Kouichi Akahane and Naokatsu Yamamoto

      Article first published online: 25 SEP 2013 | DOI: 10.1002/pssc.201300271

    16. Fabrication and analysis of current confinement structure for photonic crystal laser (pages 1465–1468)

      S. Yamauchi, M. Morifuji and M. Kondow

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300223

    17. Physics, spintronics, and novel device concepts

      On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors (pages 1469–1472)

      Raj K. Jana, Gregory L. Snider and Debdeep Jena

      Article first published online: 2 OCT 2013 | DOI: 10.1002/pssc.201300280

    18. Spin Hall reduction of Josephson effect in InAs two-dimensional electrons (pages 1473–1476)

      Taketomo Nakamura, Yuichi Takahashi, Yoshiaki Hashimoto, DongHa Yun, SunWoo Kim, Yasuhiro Iye and Shingo Katsumoto

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300263

    19. Effect of arsenic source flow rate on the lattice defects in GaAsN grown by chemical beam epitaxy (pages 1477–1480)

      Boussairi Bouzazi, Nobuaki Kojima, Yoshio Ohshita and Masafumi Yamaguchi

      Article first published online: 25 SEP 2013 | DOI: 10.1002/pssc.201300272

    20. In-situ annealing effect of zinc-blende MnAs thin films grown on InP substrates (pages 1481–1484)

      Hiroto Oomae, Tsuneyuki Shimazaki, Hideyuki Toyota, Shin-ichi Nakamura and Naotaka Uchitomi

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300250

    21. Graphene-based three-branch nano-junction (TBJ) logic inverter (pages 1485–1488)

      Xiang Yin and Seiya Kasai

      Article first published online: 25 SEP 2013 | DOI: 10.1002/pssc.201300279

    22. Nanocharacterization and nanostructures

      Study of carrier dynamics of vertically aligned InAs/GaAsSb quantum dot structures (pages 1489–1491)

      Wei-Sheng Liu, Yen-Ting Wang, Ching-Min Chang, Wen-Yu Qiu and Chi Fang

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300248

    23. Polarization controlled emisson from closely stacked InAs/GaAs quantum dots (pages 1492–1495)

      Masaya Suwa, Akihiro Takahashi, Tatsuya Ueda, Bessho Yusuke, Yukihiro Harada and Takashi Kita

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300268

    24. Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates (pages 1496–1499)

      Jinkwan Kwoen, Katsuyuki Watanabe, Yasutomo Ota, Satoshi Iwamoto and Yasuhiko Arakawa

      Article first published online: 21 OCT 2013 | DOI: 10.1002/pssc.201300316

    25. Controlled nucleation and optical properties of InAs quantum dots grown on faceted GaAs microstructures (pages 1500–1504)

      Marlene Zander, Jiro Nishinaga, Hideki Gotoh and Yoshiji Horikoshi

      Article first published online: 21 OCT 2013 | DOI: 10.1002/pssc.201300274

    26. Post-growth annealing of GaSb quantum dots in GaAs formed by droplet epitaxy (pages 1505–1508)

      Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma and Hiroyuki Sakaki

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300121

    27. Preferential N-H bond direction in GaAsN grown by chemical beam epitaxy (pages 1513–1516)

      Kazuma Ikeda, Makoto Inagaki, Nobuaki Kojima, Yoshio Ohshita and Masafumi Yamaguchi

      Article first published online: 21 OCT 2013 | DOI: 10.1002/pssc.201300281

  9. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
    1. GaN and related semiconductors

      High-Q AlN ladder-structure photonic crystal nanocavity fabricated by layer transfer (pages 1517–1520)

      Sylvain Sergent, Munetaka Arita, Satoshi Kako, Katsuaki Tanabe, Satoshi Iwamoto and Yasuhiko Arakawa

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300217

  10. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Article
    9. Contributed Articles
    10. Invited Article
    11. Contributed Articles
    1. GaN and related semiconductors

      Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer (pages 1521–1524)

      Noritoshi Maeda and Hideki Hirayama

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300278

    2. Orange/yellow InGaN/AlN nanodisk light emitting diodes (pages 1525–1528)

      Manish Mathew, Hassanet Sodabanalu, Masakazu Sugiyama and Yoshiaki Nakano

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300258

    3. High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates (pages 1529–1532)

      Rei Hashimoto, Jongil Hwang, Shinji Saito and Shinya Nunoue

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300238

    4. The influence of temperature on the recombination processes in blue and green InGaN LEDs (pages 1533–1536)

      Benjamin G. Crutchley, Igor P. Marko and Stephen J. Sweeney

      Article first published online: 2 OCT 2013 | DOI: 10.1002/pssc.201300360

    5. Dislocation density dependence of stimulated emission characteristics in AlGaN/Al multiquantum wells (pages 1537–1540)

      Yuko Matsubara, Tomoaki Yamada, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300265

    6. Thickness optimization of GaN layers by in-situ observation of GaN MOVPE on Si (111) (pages 1541–1544)

      Cai Liu, Hassanet Sodabanlu, Masakazu Sugiyama and Yoshiaki Nakano

      Article first published online: 25 SEP 2013 | DOI: 10.1002/pssc.201300266

    7. Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy (pages 1545–1548)

      Shuhei Yagi, Junichiro Suzuki, Misao Orihara, Yasuto Hijikata and Hiroyuki Yaguchi

      Article first published online: 25 SEP 2013 | DOI: 10.1002/pssc.201300275

    8. Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al2O3 and silicon by RF-MBE (pages 1549–1552)

      Tomohiro Yamaguchi, Daiki Tajimi, Masato Hayashi, Tatsuhiro Igaki, Yohei Sugiura and Tohru Honda

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300399

    9. Damage characteristics of n-GaN thin film surfaces etched by N2 plasmas (pages 1553–1556)

      Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Tatsuo Shirahama, Tetsuya Yamada, Kazuma Aoki, Mari Takabatake, Kikuo Tominaga and Takashi Mukai

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300190

    10. XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma treatments (pages 1557–1560)

      Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Isao Makabe, Ken Nakata, Tsukuru Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa and Tadahiro Ohmi

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300225

    11. Oxide semiconductors

      Thermal distribution in amorphous InSnZnO thin-film transistor (pages 1561–1564)

      Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa and Yukiharu Uraoka

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300253

    12. Enhancing carrier mobility of IGZO TFT fabricated by non-vacuum mist CVD with O3 assistance (pages 1565–1568)

      Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada and Mamoru Furuta

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300247

    13. Development of high-quality titanium-doped gallium ZnO transparent conductive films by RF magnetron sputtering techniques (pages 1569–1572)

      Wei-Sheng Liu, Shen-Yu Wu, Ching-Hsuan Tseng and Chao-Yu Hung

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300254

    14. Local structure analysis of Zn1-xMgx O thin films by soft X-ray absorption spectroscopy (pages 1573–1575)

      K. Ogata, M. Kozub, K. Koike, S. Sasa, M. Inoue, M. Yano and Y. Tamenori

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300207

    15. Photoluminescence of ZnO quantum dot films prepared by low temperature chemical vapor deposition (pages 1576–1579)

      Xinyu Zhang, Kenkichiro Kobayashi, Yasumasa Tomita, Yasuhisa Maeda and Yosiumi Kohno

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300229

    16. Comparative study of optical properties of ZnO films and nanorods grown by atmospheric-pressure CVD and chemical bath deposition (pages 1580–1583)

      Tomoaki Terasako, Yoshinori Ogura, Shohei Fujimoto, Toshihiro Murakami, Masakazu Yagi and Sho Shirakata

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300174

    17. Time-resolved spectroscopy of luminescence in Cu- and Cr-doped β-Ga2O3 (pages 1584–1587)

      Akira Nakazawa, Dai Yasukawa, Hirofumi Wakai, Hisaya Oda and Akio Yamanaka

      Article first published online: 21 OCT 2013 | DOI: 10.1002/pssc.201300241

    18. Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering (pages 1588–1591)

      Kazuya Ishibashi, Ryohei Aida, Motoki Takahara, Jyun Kudo, Isao Tsunoda, Kenichiro Takakura, Toshiyuki Nakashima, Mutsuo Shibuya and Katsuya Murakami

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300242

    19. Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates (pages 1592–1595)

      Sam-Dong Lee, Kazuaki Akaiwa and Shizuo Fujita

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300259

    20. Oriented growth of beta gallium oxide thin films on yttrium-stabilized zirconia substrates (pages 1596–1599)

      Kentaro Kaneko, Hiroshi Ito, Sam-Dong Lee and Shizuo Fujita

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300257

    21. Carbon related materials and devices

      Changing photoluminescence spectra of graphene oxide by centrifugation treatments (pages 1600–1603)

      Daichi Kozawa, Yuhei Miyauchi, Shinichiro Mouri and Kazunari Matsuda

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300232

    22. Floating-bridge structure of graphene with ionic-liquid gate (pages 1604–1607)

      Yusuke Yamashiro, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto

      Article first published online: 18 OCT 2013 | DOI: 10.1002/pssc.201300252

    23. Current on-off operation of graphene transistor with dual gates and He ion irradiated channel (pages 1608–1611)

      Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song-Lin Li, Kazuhito Tsukagoshi, Shintaro Sato and Naoki Yokoyama

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300262

    24. Fabrication of high-mobility n -type carbon nanotube thin-film transistors on plastic film (pages 1612–1615)

      Tomohiro Yasunishi, Shigeru Kishimoto, Esko I. Kauppinen and Yutaka Ohno

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300231

    25. Transient thermal response of an individual multiwall carbon nanotube (pages 1616–1619)

      Yukiko Wada, Yusuke Ohshima, Takayuki Arie and Seiji Akita

      Article first published online: 7 OCT 2013 | DOI: 10.1002/pssc.201300236

    26. Design of new carbon allotropes of fused small fullerenes (pages 1620–1623)

      Mina Maruyama and Susumu Okada

      Article first published online: 2 OCT 2013 | DOI: 10.1002/pssc.201300237

    27. Electrostatic potential of hydrogenated finite-length carbon nanotubes under an electric field (pages 1624–1627)

      Ayaka Yamanaka and Susumu Okada

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300234

    28. Surface morphology of multilayer graphene synthesized directly on silicon dioxide (pages 1628–1631)

      Kenta Katakura, Hikari Tomori, Youiti Ootuka and Akinobu Kanda

      Article first published online: 2 OCT 2013 | DOI: 10.1002/pssc.201300285

    29. Organic semiconductors and flexible materials

      Short-channel, high-mobility organic thin-film transistors with alkylated dinaphthothienothiophene (pages 1632–1635)

      Masatoshi Kitamura, Yasutaka Kuzumoto and Yasuhiko Arakawa

      Article first published online: 23 SEP 2013 | DOI: 10.1002/pssc.201300245

    30. Organic field-effect transistors fabricated by solution process using TMTSF-TCNQ complex crystals grown at various temperatures (pages 1636–1639)

      Takuya Nawata, Hideo Yamakado, K. Uno and Ichiro Tanaka

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300147

    31. Solar and related energy harvesting technology

      Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE (pages 1640–1643)

      Takuo Sasaki, Andrew G. Norman, Manuel J. Romero, Mowafak M. Al-Jassim, Masamitu Takahasi, Nobuaki Kojima, Yoshio Ohshita and Masafumi Yamaguchi

      Article first published online: 24 OCT 2013 | DOI: 10.1002/pssc.201300284

    32. Band structures of Si/InGaP heterojunctions by using surface-activated bonding (pages 1644–1647)

      Jianbo Liang, Masashi Morimoto, Shota Nishida and Naoteru Shigekawa

      Article first published online: 20 SEP 2013 | DOI: 10.1002/pssc.201300235

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