physica status solidi (c)

Cover image for Vol. 10 Issue 3

Special Issue: Fourth International Symposium on Growth of III-Nitrides (ISGN4), see further papers in Phys. Status Solidi A 210, No. 3 (2013).

March 2013

Volume 10, Issue 3

Pages 273–548

Issue edited by: Alexey Toropov, Sergey Ivanov

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    1. You have free access to this content
      Cover Picture: Phys. Status Solidi C 3/2013

      Version of Record online: 8 MAR 2013 | DOI: 10.1002/pssc.201390004

      Thumbnail image of graphical abstract

      S. F. Chichibu, T. Onuma, K. Hazu, and A. Uedono (pp. 501–506) report on the impacts of point defects and impurities on the recombination dynamics for the near-band-edge emission of AlN and high AlN mole fraction AlGaN alloy epilayers. The cover figure presents a schematic drawing of the vacuum chamber for measuring time-resolved photoluminescence and time-resolved cathodoluminescence at deep ultraviolet and vacuum ultraviolet wavelengths, together with a mono-energetic positron beam line for positron annihilation spectroscopy. Wide bandgap semiconductors are excited using frequency-quadrupled femtosecond Al2O3:Ti laser pulses, or femtosecond electron beam pulses generated using photoelectron emission. An extremely short radiative lifetime of excitonic polaritons in AlN is revealed.

  2. Issue Information

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    1. You have free access to this content
      Issue Information: Phys. Status Solidi C 3/2013

      Version of Record online: 8 MAR 2013 | DOI: 10.1002/pssc.201390005

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    1. You have free access to this content
  4. Preface

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    1. You have free access to this content
      Growth of III-Nitrides (pages 280–283)

      Alexey Toropov and Sergey Ivanov

      Version of Record online: 8 MAR 2013 | DOI: 10.1002/pssc.201360158

  5. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    1. AlGaN alloys and nanostructures for UV applications

      AlGaN/AlN quantum dots for UV light emitters (pages 285–288)

      C. Himwas, M. den Hertog, F. Donatini, Le Si Dang, L. Rapenne, E. Sarigiannidou, R. Songmuang and E. Monroy

      Version of Record online: 7 FEB 2013 | DOI: 10.1002/pssc.201200679

    2. CHVPE growth of AlGaN-based UV LEDs (pages 289–293)

      Sergey Kurin, Andrey Antipov, Iosif Barash, Alexander Roenkov, Heikki Helava, Sergey Tarasov, Ekaterina Menkovich, Ivan Lamkin and Yuri Makarov

      Version of Record online: 7 FEB 2013 | DOI: 10.1002/pssc.201200640

    3. AlGaN photodetectors for the UV-C spectral region on planar and epitaxial laterally overgrown AlN/sapphire templates (pages 294–297)

      A. Knigge, M. Brendel, F. Brunner, S. Einfeldt, A. Knauer, V. Kueller and M. Weyers

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200636

    4. Selectively-sensitive metal-semiconductor-metal photodetectors based on AlGaN/AlN and ZnCdS/GaP heterostructures (pages 298–301)

      S. Averin, P. Kuznetzov, V. Zhitov, L. Zakharov, N. Alkeev and N. Gladisheva

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200631

    5. Properties of MOCVD GaN/AlGaN heterostructures grown on polar and non-polar bulk GaN substrates (pages 302–305)

      M. Rudziński, R. Kudrawiec, R. Kucharski, R. Dwiliński and W. Strupiński

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200693

    6. Influence of growth process scheme on the properties of AlGaN/AlN/GaN heterostructures (pages 306–310)

      Mateusz Wośko, Bogdan Paszkiewicz, Regina Paszkiewicz and Marek Tłaczała

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200708

    7. EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE (pages 311–314)

      K. Zhuravlev, T. Malin, S. Trubina, S. Erenburg, L. Dobos, B. Pecz, V. Davydov, A. Smirnov and R. Kyutt

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200706

    8. Characterization of MBE-grown AlGaN layers heavily doped using silane (pages 315–318)

      K. S. Zhuravlev, I. V. Osinnykh, D. Yu. Protasov, T. V. Malin, V. Yu. Davydov, A. N. Smirnov, R. N. Kyutt, A. V. Spirina and V. I. Solomonov

      Version of Record online: 7 FEB 2013 | DOI: 10.1002/pssc.201200703

    9. The quantum-confined Stark effect and localization of charge carriers in AlxGa1-xN/AlyGa1-yN quantum wells with different morphologies (pages 319–322)

      E. A. Shevchenko, V. N. Jmerik, A. M. Mizerov, D. V. Nechaev, A. A. Sitnikova, S. V. Ivanov and A. A. Toropov

      Version of Record online: 7 FEB 2013 | DOI: 10.1002/pssc.201200953

    10. DFT modeling of AlN/GaN multi-quantum wells (pages 323–326)

      Pawel Strak, Pawel Kempisty, Maria Ptasinska and Stanislaw Krukowski

      Version of Record online: 22 JAN 2013 | DOI: 10.1002/pssc.201200643

    11. Growth and properties of InGaN LDs, LEDs, and solar cells

      Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis (pages 327–331)

      Lauri Riuttanen, Pyry Kivisaari, Nikolai Mäntyoja, Jani Oksanen, Muhammad Ali, Sami Suihkonen and Markku Sopanen

      Version of Record online: 22 JAN 2013 | DOI: 10.1002/pssc.201200670

    12. Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs (pages 332–334)

      Natalia Shmidt, Andrew Greshnov, Anton Chernyakov, Michael Levinshtein, Alexander Zakgeim and Evgeniia Shabunina

      Version of Record online: 22 JAN 2013 | DOI: 10.1002/pssc.201200657

    13. Extended defect system as a main source of non-radiative recombination in InGaN/GaN LEDs (pages 335–337)

      Evgeniia Shabunina, Nikita Averkiev, Anton Chernyakov, Michael Levinshtein, Pavel Petrov and Natalia Shmidt

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200656

    14. Electrochemical profiling of heterostructures with multiple quantum wells InGaN/GaN (pages 342–345)

      Vasily Zubkov, Olga Kucherova, Dmitry Frolov and Anna Zubkova

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200661

    15. InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies (pages 350–354)

      Anna Mukhtarova, Sirona Valdueza-Felip, Christophe Durand, Qing Pan, Louis Grenet, David Peyrade, Catherine Bougerol, Walf Chikhaoui, Eva Monroy and Joël Eymery

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200682

    16. Growth of bulk crystals and templates

      HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates (pages 355–358)

      Sylvia Hagedorn, Eberhard Richter, Ute Zeimer and Markus Weyers

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200651

    17. Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer (pages 359–361)

      Tadashige Sato, Shinya Okano, Takenari Goto, Takafumi Yao, Akira Sato and Hideki Goto

      Version of Record online: 4 FEB 2013 | DOI: 10.1002/pssc.201200535

    18. Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy (pages 362–365)

      N. Coudurier, R. Boichot, V. Fellmann, A. Claudel, E. Blanquet, A. Crisci, S. Coindeau, D. Pique and M. Pons

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200686

    19. Self-organized defect control during GaN homoepitaxial growth on nanostructured substrates (pages 366–368)

      M. Mynbaeva, A. Sitnikova, A. Nikolaev, K. Vinogradova, K. Mynbaev and V. Nikolaev

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200448

    20. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy (pages 369–372)

      Koji Okuno, Takahide Oshio, Naoki Shibata, Yoshio Honda, Masahito Yamaguchi, Shigeyasu Tanaka and Hiroshi Amano

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200587

    21. Selective area growth of GaN on r-plane sapphire by MOCVD (pages 373–376)

      Mariya M. Rozhavskaya, Wsevolod V. Lundin, Andrey E. Nikolaev, Evgeniy E. Zavarin, Sergey I. Troshkov, Pavel N. Brunkov and Andrey F. Tsatsulnikov

      Version of Record online: 4 FEB 2013 | DOI: 10.1002/pssc.201200545

    22. Effect of annealing and nitridation on (0001) sapphire surface polaritons (pages 377–380)

      Konstantin Zhuravlev, Timur Malin, Vladimir Mansurov, Nadezhda Novikova and Vladimir Yakovlev

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200660

    23. Molecular beam epitaxial growth of (1 1 -2 2) GaN on m-plane sapphire (pages 381–384)

      Mohana K. Rajpalke, Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat and S. B. Krupanidhi

      Version of Record online: 4 FEB 2013 | DOI: 10.1002/pssc.201200723

    24. GaN growth on (111)Al substrates by CS-MBE and their chemical lift-off technique (pages 385–387)

      Tohru Honda, Masato Hayashi, Yohei Sugiura, Itsuki Takezawa and Tomohiro Yamaguchi

      Version of Record online: 4 FEB 2013 | DOI: 10.1002/pssc.201200665

    25. Novel growth techniques

      Plasma-assisted electroepitaxy of GaN layers (pages 388–391)

      S. V. Novikov and C. T. Foxon

      Version of Record online: 22 JAN 2013 | DOI: 10.1002/pssc.201200595

    26. Temperature dependence of a-plane GaN low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy (pages 392–395)

      Shigeya Naritsuka, Chia-Hung Lin, Shota Uchiyama and Takahiro Maruyama

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200647

    27. Coalescence growth of GaN crystals on point seed crystals using the Na flux method (pages 400–404)

      M. Imanishi, K. Murakami, H. Imabayashi, H. Takazawa, Y. Todoroki, D. Matsuo, M. Maruyama, M. Imade, M. Yoshimura and Y. Mori

      Version of Record online: 11 JAN 2013 | DOI: 10.1002/pssc.201200705

    28. Pyrolysis of dimethylhydrazine for the MOVPE growth of GaN and InN monitored by in-situ quadrupole mass spectrometry (pages 405–408)

      Quang Tu Thieu, Takuro Inamoto, Shigeyuki Kuboya and Kentaro Onabe

      Version of Record online: 17 JAN 2013 | DOI: 10.1002/pssc.201200671

    29. Substrate impact on the growth of InN nanostructures by droplet epitaxy (pages 409–412)

      Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke and S. B. Krupanidhi

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200585

    30. Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides (pages 413–416)

      Takahide Hirasaki, Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu

      Version of Record online: 11 JAN 2013 | DOI: 10.1002/pssc.201200695

    31. Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE (pages 417–420)

      Jung-Hun Choi, Kanako Shojiki, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama and Takashi Matsuoka

      Version of Record online: 7 FEB 2013 | DOI: 10.1002/pssc.201200667

    32. Self-organization of iridium nanoislands for GaN applications (pages 421–424)

      Tomas Grinys, Mindaugas Silinskas, Algirdas Mekys, Agne Kalpakovaite and Roland Tomasiunas

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssc.201200719

    33. Growth on Si and SiC

      Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate (pages 425–428)

      T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M. J. Rashid, F. Semond and Y. Cordier

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200556

    34. Activity modulation MEE growth of 2H-AlN on Si(111) using double buffer layer grown by PA-MBE (pages 429–432)

      Tadashi Ohachi, Yuka Yamamoto, Osamu Ariyada, Yuuki Sato, Sinzo Yoshikado and Motoi Wada

      Version of Record online: 11 JAN 2013 | DOI: 10.1002/pssc.201200728

    35. HVPE growth of GaN in the semipolar direction on planar Si(210) (pages 433–436)

      Vasily Bessolov, Elena Konenkova, Mikhail Shcheglov, Shukrillo Sharofidinov, Sergey Kukushkin, Andrey Osipov and Vladimir Nikolaev

      Version of Record online: 22 JAN 2013 | DOI: 10.1002/pssc.201200566

    36. MOVPE growth of Inx Ga1-xN (x ∼0.5) on Si(111) substrates with a pn junction on the surface (pages 437–440)

      A. Yamamoto, A. Mihara, D. Hironaga, K. Sugita, A. G. Bhuiyan, A. Hashimoto, N. Shigekawa and N. Watanabe

      Version of Record online: 4 FEB 2013 | DOI: 10.1002/pssc.201200649

    37. Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate (pages 441–444)

      Mariya M. Rozhavskaya, Wsevolod V. Lundin, Evgeniy E. Zavarin, Elena Yu. Lundina, Sergey I. Troshkov, Valery Yu. Davydov, Mariya A. Yagovkina, Pavel N. Brunkov and Andrey F. Tsatsulnikov

      Version of Record online: 4 FEB 2013 | DOI: 10.1002/pssc.201200630

    38. Specific features of sublimation growth of bulk AlN crystals on SiC wafers (pages 445–448)

      E. Mokhov, I. Izmaylova, O. Kazarova, A. Wolfson, S. Nagalyuk, D. Litvin, A. Vasiliev, H. Helava and Yu. Makarov

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssc.201200638

    39. Defects and impurities

      EPR and ODMR defect control in AlN bulk crystals (pages 449–452)

      V. A. Soltamov, I. V. Ilyin, A. S. Gurin, D. O. Tolmachev, N. G. Romanov, E. N. Mokhov, G. V. Mamin, S. B. Orlinskii and P. G. Baranov

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200673

    40. Microstructure of Mg doped GaNAs alloys (pages 453–456)

      Z. Liliental-Weber, R. dos Reis, S. V. Novikov, K. M. Yu, A. X. Levander, O. D. Dubon, J. Wu, W. Walukiewicz and C. T. Foxon

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200666

    41. Continuous wave OSL in bulk AlN single crystals (pages 457–460)

      Alexander Vokhmintsev, Ilya Weinstein and Dmitriy Spiridonov

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200519

    42. Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN (pages 461–463)

      Henri Nykänen, Sami Suihkonen, Markku Sopanen and Filip Tuomisto

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssc.201200573

    43. Two modes of HVPE growth of GaN and related macrodefects (pages 468–471)

      V. V. Voronenkov, N. I. Bochkareva, R. I. Gorbunov, P. E. Latyshev, Y. S. Lelikov, Y. T. Rebane, A. I. Tsyuk, A. S. Zubrilov, U. W. Popp, M. Strafela, H. P. Strunk and Y. G. Shreter

      Version of Record online: 7 FEB 2013 | DOI: 10.1002/pssc.201200701

    44. Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy (pages 472–475)

      Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai and Akinori Koukitu

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200685

    45. Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping (pages 481–485)

      Vyacheslav Kachkanov, Igor Dolbnya, Kevin O'Donnell, Katharina Lorenz, Sergio Pereira, Ian Watson, Thomas Sadler, Haoning Li, Vitaly Zubialevich and Peter Parbrook

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200596

    46. Transport properties and multifunctional devices

    47. Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures (pages 490–493)

      Bogdan Paszkiewicz, Mateusz Wosko, Regina Paszkiewicz and Marek Tlaczala

      Version of Record online: 22 JAN 2013 | DOI: 10.1002/pssc.201200709

    48. Drastic change in electronic structure of AlGaN under Ba adsorption (pages 494–497)

      Galina Benemanskaya, Sergey Timoshnev, Sergey Ivanov, Valentin Jmerik and Dmitry Marchenko

      Version of Record online: 18 FEB 2013 | DOI: 10.1002/pssc.201200692

    49. Resistance formation mechanisms for contacts to n -GaN and n -AlN with high dislocation density (pages 498–500)

      A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, V. P. Klad'ko, R. V. Konakova, Ya. Ya. Kudryk, V. N. Panteleev and V. N. Sheremet

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200530

    50. Optical and vibrational properties

      Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys (pages 501–506)

      Shigefusa F. Chichibu, Takeyoshi Onuma, Kouji Hazu and Akira Uedono

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssc.201200676

    51. Higher than 90% internal quantum efficiency of photoluminescence in GaN:Si,Zn (pages 507–510)

      M. A. Reshchikov, J. D. McNamara, A. Behrends, M. S. Mohajerani, A. Bakin and A. Waag

      Version of Record online: 24 JAN 2013 | DOI: 10.1002/pssc.201200664

    52. Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers (pages 511–514)

      Evgenii V. Lutsenko, Mikalai V. Rzheutski, Vitalii Z. Zubialevich, Viacheslav N. Pavlovskii, Gennadii P. Yablonskii, Alexei S. Shulenkov, Ignas Reklaitis, Arūnas Kadys, Tadas Malinauskas, Saulius Nargelas, Kęstutis Jarašiūnas and Artūras Žukauskas

      Version of Record online: 4 FEB 2013 | DOI: 10.1002/pssc.201200590

    53. Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires (pages 519–522)

      J. Wang, F. Demangeot, R. P’echou, A. Ponchet, A. Cros and B. Daudin

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200451

    54. Determination of zinc concentration in GaN:Zn,Si from photoluminescence (pages 523–526)

      Matin Sadat Mohajerani, Michael A. Reshchikov, Arne Behrends, Andrey Bakin, Stefan Kück and Andreas Waag

      Version of Record online: 22 JAN 2013 | DOI: 10.1002/pssc.201200669

    55. Phase separation in InxGa1-xN (0.10 < x < 0.40) (pages 527–531)

      K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Ya. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov and A. A. Toropov

      Version of Record online: 18 FEB 2013 | DOI: 10.1002/pssc.201200838

    56. Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO2 (pages 532–535)

      Evgenii V. Lutsenko, Mikalai V. Rzheutski, Viacheslav N. Pavlovskii, Elena V. Muravitskaya, Gennadii P. Yablonskii, Christof Mauder, Ben Reuters, Holger Kalisch, Michael Heuken and Andrei Vescan

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200677

    57. Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence (pages 536–539)

      J. D. McNamara, M. A. Foussekis, A. A. Baski, X. Li, V. Avrutin, H. Morkoç, J. H. Leach, T. Paskova, K. Udwary, E. Preble and M. A. Reshchikov

      Version of Record online: 21 DEC 2012 | DOI: 10.1002/pssc.201200662

    58. Ferromagnetic correlations in heavy fermions from an NMR point of view: YbNi4P2 vs. YbRh2Si2 (pages 540–543)

      M. Baenitz, R. Sarkar, P. Khuntia, C. Krellner, C. Geibel and F. Steglich

      Version of Record online: 18 FEB 2013 | DOI: 10.1002/pssc.201200852

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