physica status solidi (c)

Cover image for Vol. 10 Issue 5

Special Issue: 39th International Symposium on Compound Semiconductors (ISCS 2012) see one further paper in Phys. Status Solidi B 250, No. 4 (2013).

May 2013

Volume 10, Issue 5

Pages 713–888

Issue edited by: Sanjay Krishna, Elena Plis

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      Cover Picture: Phys. Status Solidi C 5/2013

      Article first published online: 21 MAY 2013 | DOI: 10.1002/pssc.201390008

      Thumbnail image of graphical abstract

      A triple quantum dot containing three electrons is a versatile solid-state system allowing different tuneable qubits by choosing different pairs of the three-spin levels. S. Studenikin, G. Aers, G. Granger, L. Gaudreau, A. Kam, P. Zawadzki, Z. R. Wasilewski, and A. Sachrajda in their paper on pp. 752–755 demonstrate that disparate qubits and more complex entities can be realized by optimizing the manipulation pulses. The cover figure demonstrates the situation when different pure qubits |1〉 ⟷ |2〉 (blue arrows on the left top inset and the lowest right bottom inset) and |2〉 ⟷ |3〉 (green arrows and the upper right inset) can be realized experimentally, or where all three quantum levels are involved in a coherent process (recently predicted theoretically by Särkkä and Harju [New J. Phys. 13, 043010-09 (2011).]). This situation can be considered as a solid-state qutrit – “a unit of quantum information that can exist in three possible states” (wikipedia).

  2. Issue Information

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      Issue Information: Phys. Status Solidi C 5/2013

      Article first published online: 21 MAY 2013 | DOI: 10.1002/pssc.201390009

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      Contents: Phys. Status Solidi C 5/2013 (pages 713–717)

      Article first published online: 21 MAY 2013 | DOI: 10.1002/pssc.201360162

  4. Preface

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. You have free access to this content
      Compound Semiconductors (pages 719–725)

      Sanjay Krishna, Elena Plis, Pallab Bhattacharya and Diana Huffaker

      Article first published online: 21 MAY 2013 | DOI: 10.1002/pssc.201360163

  5. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. III-V Semiconductor Devices: Type-II heterostructures

      Estimation of effective mass and subbands in multi-quantum wells using polarized light irradiation (pages 727–731)

      K. Tanaka, N. Happo, M. Fujiwara and N. Kotera

      Article first published online: 27 MAR 2013 | DOI: 10.1002/pssc.201200650

    2. MOVPE growth for photodiodes in 2.5 µm region with InGaAs/GaAsSb type-II quantum wells (pages 732–735)

      Kei Fujii, Takashi Ishizuka, Youichi Nagai, Yasuhiro Iguchi and Katsushi Akita

      Article first published online: 22 FEB 2013 | DOI: 10.1002/pssc.201200611

    3. An accurate interband tunneling model for InAs/GaSb heterostructure devices (pages 740–743)

      Md. Itrat Bin Shams, Yi Xie, Yeqing Lu and Patrick Fay

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200624

    4. Noise characteristics of InAs/GaSb superlattice infrared photodiodes (pages 744–747)

      Andreas Wörl, Philipp Kleinow, Robert Rehm, Johannes Schmitz and Martin Walther

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200777

    5. (111) InAs/GaSb type-II strained layer superlattice material for high operating temperature detection (pages 748–751)

      Elena Plis, Brianna Klein, Stephen Myers, Nutan Gautam and Sanjay Krishna

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200605

  6. Invited Article

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Quantum dots and quantum wires

      Coherent manipulation of three-spin states in a GaAs/AlGaAs triple dot device (pages 752–755)

      S. Studenikin, G. Aers, G. Granger, L. Gaudreau, A. Kam, P. Zawadzki, Z. R. Wasilewski and A. Sachrajda

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200655

  7. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Quantum dots and quantum wires

    2. Au-assisted growth of InAs nanowires on GaAs(111)B, GaAs(100), InP(111)B, InP(100) by MOVPE (pages 761–764)

      S. Murakami, H. Funayama, K. Shimomura and T. Waho

      Article first published online: 19 MAR 2013 | DOI: 10.1002/pssc.201200593

    3. High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE (pages 765–768)

      Hong Ye, Mahdad Sadeghi, Yuxin Song, Zonghe Lai, Yi Gu and Shumin Wang

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200623

    4. Device applications

      InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency (pages 769–772)

      Evan Lobisser, Johann C. Rode, Vibhor Jain, Han-Wei Chiang, Ashish Baraskar, William J. Mitchell, Brian J. Thibeault, Mark J. W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, Joel M. Fastenau and Amy W. K. Liu

      Article first published online: 22 FEB 2013 | DOI: 10.1002/pssc.201200674

    5. InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds (pages 773–776)

      Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji and Tetsuya Suemitsu

      Article first published online: 18 FEB 2013 | DOI: 10.1002/pssc.201200610

    6. Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection (pages 777–781)

      Parisa Yadranjee Aghdam and Huan Zhao

      Article first published online: 22 FEB 2013 | DOI: 10.1002/pssc.201200621

    7. Extremely improved InP template and GaInAsP system growth on directly-bonded InP/SiO2-Si and InP/glass substrate (pages 782–785)

      Keiichi Matsumoto, Tatsunori Makino, Katsuya Kimura and Kazuhiko Shimomura

      Article first published online: 22 FEB 2013 | DOI: 10.1002/pssc.201200592

    8. AlGaAs anode heterojunction PIN diodes (pages 786–789)

      T. Boles, J. Brogle, D. Hoag and D. Carlson

      Article first published online: 27 MAR 2013 | DOI: 10.1002/pssc.201200612

    9. Wide Bandgap Materials: AlGaN/GaN transistors

      AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks (pages 790–793)

      K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji and T. Suemitsu

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200609

    10. Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors (pages 794–798)

      Shubhajit Mukherjee, Yevgeny Puzyrev, John Hinckley, Ronald D. Schrimpf, Daniel M. Fleetwood, Jasprit Singh and Sokrates T. Pantelides

      Article first published online: 22 FEB 2013 | DOI: 10.1002/pssc.201200620

    11. Insulating behavior of interfaces in regrown Al0.23Ga0.77N/GaN double heterostructures on Al0.07Ga0.93N back-barrier templates (pages 799–802)

      B. Reuters, H. Hahn, H. Behmenburg, M. Heuken, H. Kalisch and A. Vescan

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200607

    12. Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSHFETs by gate-first process (pages 803–807)

      Eiji Miyazaki, Shigeru Kishimoto and Takashi Mizutani

      Article first published online: 19 MAR 2013 | DOI: 10.1002/pssc.201200603

    13. Tensile strain-induced formation of micro-cracks for AlGaN/GaN heterostructures (pages 808–811)

      Junji Kotani, Shuichi Tomabechi, Toyoo Miyajima, Norikazu Nakamura, Toshihide Kikkawa, Keiji Watanabe and Kenji Imanishi

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200627

    14. GaN-based devices

      Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes (pages 812–815)

      Shafat Jahangir, Animesh Banerjee and Pallab Bhattacharya

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200583

    15. Ridge waveguide InGaN/GaN quantum dot edge emitting visible lasers (pages 816–819)

      Animesh Banerjee, Thomas Frost, Shafat Jahangir, Ethan Stark and Pallab Bhattacharya

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200577

    16. High transconductance ion-implanted GaN MISFETs using atomic layer deposited high-k dielectrics (pages 820–823)

      S. Gu, H. Katayose, K. Nomoto, T. Nakamura, A. Ohoka, K. Lee, W. Lu and P. M. Asbeck

      Article first published online: 18 FEB 2013 | DOI: 10.1002/pssc.201200625

    17. Over 550 V breakdown voltage of InAlN/GaN HEMT on Si (pages 824–826)

      Hisashi Saito, Yoshiharu Takada, Masahiko Kuraguchi, Miki Yumoto and Kunio Tsuda

      Article first published online: 27 MAR 2013 | DOI: 10.1002/pssc.201200608

    18. 317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance (pages 827–830)

      Dong Seup Lee, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, David Kopp, Patrick Fay and Tomás Palacios

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200541

    19. GaN-based high voltage transistors for efficient power switching (pages 831–834)

      Patrick Waltereit, Richard Reiner, Heiko Czap, Detlef Peschel, Stefan Müller, Rüdiger Quay, Michael Mikulla and Oliver Ambacher

      Article first published online: 18 FEB 2013 | DOI: 10.1002/pssc.201200563

    20. >1200 V GaN-on-silicon Schottky diode (pages 835–839)

      T. Boles, C. Varmazis, D. Carlson, T. Palacios, G. W. Turner and R. J. Molnar

      Article first published online: 27 MAR 2013 | DOI: 10.1002/pssc.201200589

    21. Enhancement mode InAlGaN/GaN MISHFETs with plasma-oxidised AlOx/TiOx as gate insulator (pages 840–843)

      Herwig Hahn, Hannes Behmenburg, Nico Ketteniss, Michael Heuken, Holger Kalisch and Andrei Vescan

      Article first published online: 18 FEB 2013 | DOI: 10.1002/pssc.201200594

    22. High voltage GaN-on-silicon HEMT (pages 844–848)

      T. Boles, C. Varmazis, D. Carlson, T. Palacios, G. W. Turner and R. J. Molnar

      Article first published online: 27 MAR 2013 | DOI: 10.1002/pssc.201200613

    23. Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking (pages 849–852)

      Eldad Bahat Treidel, Oliver Hilt, Andreas Wentzel, Joachim Würfl and Günther Tränkle

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200569

    24. Carrier dynamics and localization in AlInN/GaN heterostructures (pages 853–856)

      Saulius Marcinkevičius, Vytautas Liuolia, Daniel Billingsley, Maxim Shatalov, Jinwei Yang, Remis Gaska and Michael S. Shur

      Article first published online: 6 FEB 2013 | DOI: 10.1002/pssc.201200599

    25. Nanoepitaxial Synthesis

      Systematic theoretical investigations for the polytypism in SiC (pages 857–860)

      Tomonori Ito, Toru Akiyama and Kohji Nakamura

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200570

    26. Synthesis of AlON materials for UV emitting devices (pages 861–864)

      Yujin Cho, Jieun Koo, Youngji Cho, Woong Lee, Jeungwoo Lee, Byeongwoo Lee, Sangtae Lee and Jiho Chang

      Article first published online: 4 APR 2013 | DOI: 10.1002/pssc.201200616

    27. Growth process and morphology of three-dimensional GaSb islands on Ga/Si(111) (pages 865–868)

      Shinsuke Hara, Ryuto Machida, Keisuke Yoshiki, Katsumi Irokawa, Hirofumi Miki, Akira Kawazu and Hiroki I. Fujishiro

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200597

    28. Electron-beam incident-angle- resolved cathodoluminescence studies on bulk ZnO crystals (pages 869–872)

      Takeyoshi Onuma, Tomohiro Yamaguchi and Tohru Honda

      Article first published online: 29 JAN 2013 | DOI: 10.1002/pssc.201200598

    29. Room temperature operation of ITO nano-crystal gas sensor (pages 873–876)

      Jieun Koo, Seunghwan Park, Woong Lee, Youngji Cho, Hyojong Lee, Sangtae Lee and Jiho Chang

      Article first published online: 22 FEB 2013 | DOI: 10.1002/pssc.201200617

    30. Engineering of Functional Interfaces

      Spiking rate of myenteric neurons recorded from multi-electrode arrays depending on local microenvironment (pages 877–881)

      Rebekka Medert, Anne Schuster, Lukas Kristoffer Schwarz, Tanja Schwab and Karl-Herbert Schaefer

      Article first published online: 22 FEB 2013 | DOI: 10.1002/pssc.201200808

    31. Cell proliferation monitoring by multiplexed electrochemical impedance spectroscopy on microwell assays (pages 882–888)

      Stijn Duchateau, Jeroen Broeders, Dieter Croux, Daniel Janssen, Jean-Michel Rigo, Patrick Wagner, Ronald Thoelen and Ward De Ceuninck

      Article first published online: 9 APR 2013 | DOI: 10.1002/pssc.201200748

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