physica status solidi (c)

Cover image for Vol. 11 Issue 1

Special Issue: E-MRS 2013 Spring Meeting – Symposium K: Physics and Technology of Advanced Extra Functionality CMOS-based Devices, see further papers in Phys. Status Solidi A 211, No. 1 (2014) and Phys. Status Solidi RRL 8, No. 1 (2014)

January 2014

Volume 11, Issue 1

Pages 1–178

Issue edited by: Fuccio Cristiano, Peter Pichler, Clément Tavernier, Wolfgang Windl

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. You have free access to this content
      Cover Picture: Phys. Status Solidi C 1/2014

      Article first published online: 21 JAN 2014 | DOI: 10.1002/pssc.201470031

      Thumbnail image of graphical abstract

      With the transition from planar to three-dimensional device architectures such as FinFets, TFETs and nanowires, new metrology approaches are required to characterize the 3D-dopant and carrier distributions precisely, as their position-ing relative to gate edges, 3D-distribution, conformality and absolute concentration determine the device performance in great detail. As discussed in the paper of Vandervorst et al. on pp. 121–129, concepts like atomprobe tomography, SSRM and 1.5 D SIMS all contribute to resolving this metro-logy challenge, be it with varying degrees in spatial resolu-tion, information content and ease applicability.

  2. Issue Information

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. You have free access to this content
      Issue Information: Phys. Status Solidi C 1/2014

      Article first published online: 21 JAN 2014 | DOI: 10.1002/pssc.201470032

  3. Editorial

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. You have free access to this content
      Excellence – energy – ethics (pages 1–2)

      Stefan Hildebrandt and Sabine Bahrs

      Article first published online: 21 JAN 2014 | DOI: 10.1002/pssc.201470033

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. You have free access to this content
      Contents: Phys. Status Solidi C 1/2014 (pages 3–6)

      Article first published online: 21 JAN 2014 | DOI: 10.1002/pssc.201470034

  5. Preface

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. You have free access to this content
      Advanced Extra Functionality CMOS-based Devices (pages 7–8)

      Fuccio Cristiano, Peter Pichler, Clément Tavernier and Wolfgang Windl

      Article first published online: 21 JAN 2014 | DOI: 10.1002/pssc.201470035

  6. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. Doping and thermal processing: Basic studies and process optimisation

      Point defect engineering study of phosphorus ion implanted germanium (pages 9–11)

      M. A. Razali, M. Secchi, M. Bersani and R. M. Gwilliam

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300155

    2. On an improved boron segregation calibration from a particularly sensitive power MOS process (pages 12–15)

      S. Koffel, A. Burenkov, M. Sekowski, P. Pichler, D. Giubertoni, M. Bersani, M. Knaipp, E. Wachmann, M. Schrems, Y. Yamamoto and D. Bolze

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300152

    3. Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing (pages 16–19)

      Evgeny Demenev, Florian Meirer, Zahi Essa, Damiano Giubertoni, Fuccio Cristiano, Giancarlo Pepponi, Salvatore Gennaro, Massimo Bersani and Majeed A. Foad

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300161

    4. The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys (pages 20–23)

      Larbi Laânab, Amine Belafhaili, Filadelfo Cristiano, Nikolay Cherkashin and Alain Claverie

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300177

    5. Deactivation of phosphorus in silicon due to implanted nitrogen (pages 24–27)

      Ruey-Dar Chang and Chih-Hung Lin

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300131

    6. Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study (pages 28–31)

      Florian Meirer, Evgeny Demenev, Damiano Giubertoni, Lia Vanzetti, Salvatore Gennaro, Michele Fedrizzi, Giancarlo Pepponi, Georg Steinhauser, Vinayak Vishwanath, Majeed Foad and Massimo Bersani

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300160

    7. Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing (pages 32–36)

      X. Zhang, X. Ma, C. Gao, T. Xu, J. Zhao, P. Dong and J. Vanhellemont

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300107

    8. Low temperature plasma oxidation for advanced 3D CMOS-based devices (pages 37–40)

      J. Niess, W. Kegel and W. Lerch

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300154

    9. Application of atomic layer deposited dopant sources for ultra-shallow doping of silicon (pages 41–45)

      Bodo Kalkofen, Akinwumi A. Amusan, Marco Lisker and Edmund P. Burte

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300185

  7. Invited Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. More-than-Moore and advanced CMOS devices

      More Moore meets More than Moore: Enabling healthcare applications (pages 46–49)

      Sywert H. Brongersma, Michiel Blauw, Marcel Zevenbergen, Devrez Karabacak, Roman Vitushinsky, Van Anh Dam, Mercedes Crego Calama, Rudolf Vullers, Zeng Zeng and Rob van Schaijk

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300182

    2. Challenges in CMOS-based images (pages 50–56)

      Francois Roy, A. Tournier, H. Wehbe-Alause, F. Blanchet, P. Boulenc, F. Leverd, L. Favennec, C. Perrot, L. Pinzelli, M. Gatefait, N. Cherault, D. Jeanjean, J. P. Carrere, C. Augier, S. Ricq, D. Herault and S. Hulot

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300378

  8. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. More-than-Moore and advanced CMOS devices

      Spin-on-dopant phosphorus diffusion in germanium thin films for near-infrared detectors (pages 57–60)

      V. Sorianello, A. De Iacovo, L. Colace, A. Fabbri, L. Tortora and G. Assanto

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300114

    2. New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology (pages 61–64)

      O. A. Mironov, A. H. A. Hassan, M. Uhlarz, S. Kiatgamolchai, A. Dobbie, R. J. H. Morris, J. E. Halpin, S. D. Rhead, P. Allred, M. Myronov, S. Gabani, I. B. Berkutov and D. R. Leadley

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300164

    3. New junctionless RADFET dosimeter design for low-cost radiation monitoring applications (pages 65–68)

      Djemai Arar, Fayçal Djeffal, Toufik Bentrcia and Mohamed Chahdi

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300146

    4. TCAD simulation of thermally evaporated germanium (pages 69–72)

      A. De Iacovo, V. Sorianello, L. Colace and G. Assanto

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300115

    5. Challenges in spacer process development for leading-edge high-k metal gate technology (pages 73–76)

      Fabian Koehler, Dina H. Triyoso, Itasham Hussain, Bianca Antonioli and Klaus Hempel

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300157

    6. Gate-engineering-based approach to improve the nanoscale DG MOSFET behavior against interfacial trap effects (pages 77–80)

      Toufik Bentrcia, Fayçal Djeffal, Djemai Arar and Zouhir Dibi

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300134

    7. Design and simulation of optically controlled field effect transistors (pages 81–84)

      V. Sorianello, L. Colace, S. Rajamani and G. Assanto

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300128

    8. Atomistic modelling and continuum simulations

    9. Simulation of the boron build-up formation during melting laser thermal annealing (pages 89–92)

      M. Hackenberg, K. Huet, R. Negru, G. Fisicaro, A. La Magna, N. Taleb, M. Quillec and P. Pichler

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300156

    10. Lattice kinetic Monte Carlo modeling of germanium solid phase epitaxial growth (pages 93–96)

      J. L. Gomez-Selles, B. L. Darby, K. S. Jones and I. Martin-Bragado

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300159

    11. Atomistic investigation of the impact of stress during solid phase epitaxial regrowth (pages 97–100)

      Benoit Sklenard, Jean-Charles Barbe, Perrine Batude, Pierrette Rivallin, Clement Tavernier, Sorin Cristoloveanu and Ignacio Martin-Bragado

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300166

    12. Thermal properties of quantum devices in integrated circuits embedded in a chip environment (pages 105–108)

      M. Käso, U. Wulf, J. Kuˇcera, H. Richter and J. Höntschel

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300203

    13. Atomic scale Monte Carlo simulations of BF3 plasma immersion ion implantation in Si (pages 109–112)

      Antonino La Magna, Giuseppe Fisicaro, Giuseppe Nicotra, Yohann Spiegel and Frank Torregrosa

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300289

    14. Analytical expressions for the drain current of a nanotransistor in the off-state regime (pages 113–116)

      M. Krahlisch, U. Wulf, J. Kučera, H. Richter and J. Höntschel

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300122

    15. Large boron-interstitial cluster modelling in BF3 plasma implanted silicon (pages 117–120)

      Z. Essa, F. Cristiano, Y. Spiegel, Y. Qiu, P. Boulenc, M. Quillec, N. Taleb, N. Zographos, E. Bedel-Pereira, V. Mortet, A. Burenkov, M. Hackenberg, F. Torregrosa and C. Tavernier

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300165

  9. Invited Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. Physical and electrical characterization

      Dopant/carrier profiling for 3D-structures (pages 121–129)

      Wilfried Vandervorst, Andreas Schulze, Ajay Kumar Kambham, Jay Mody, Matthieu Gilbert and Pierre Eyben

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300329

    2. Characterisation of electrically active defects (pages 130–137)

      Ray Duffy and Anco Heringa

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300144

    3. Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells (pages 138–145)

      Mireille Mouis, Jae Woo Lee, Daeyoung Jeon, Ming Shi, Minju Shin and Gérard Ghibaudo

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300317

  10. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. Physical and electrical characterization

      Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation (pages 146–149)

      Cloud Nyamhere, Fuccio Cristiano, Francios Olivie, Elena Bedel-Pereira and Zahi Essa

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300204

    2. Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique (pages 150–155)

      Akhilesh K. Swarnakar, Omer Van der Biest and Jan Vanhellemont

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300101

    3. Impedance spectroscopy of polysilicon in SOI structures (pages 156–159)

      Anatoly Druzhinin, Ihor Ostrovskii, Yuriy Khoverko, Stepan Nichkalo and Iurii Kogut

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300149

    4. Silicides and germanides

      Structural characterization of in-situ silicided contacts textured on p-type [001] silicon (pages 160–163)

      Paolo Badalà, Giuseppe Faro, Cinzia Marcellino, Giovanna Pellegrino, Antonello Santangelo and Alessandra Alberti

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300132

    5. Role of the early stages of Ni-Si interaction on the formation of transrotational Ni-silicides (pages 164–168)

      Alessandra Alberti, Corrado Bongiorno, Corrado Spinella and Antonino La Magna

      Article first published online: 25 NOV 2013 | DOI: 10.1002/pssc.201300142

    6. Laser thermal anneal formation of atomically-flat low-resistive germanide contacts (pages 169–173)

      K. Huet, M. Shayesteh, I. Toqué-Tresonne, R. Negru, C. L. M. Daunt, N. Kelly, D. O'Connell, R. Yu, V. Djara, P. Carolan, N. Petkov and R. Duffy

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300168

    7. NMOS contact resistivity reduction with implants into silicides (pages 174–177)

      K. V. Rao, Fareen Adeni Khaja, Chi-Nung Ni, Shankar Muthukrishnan, Andrew Darlak, Jianxin Lei, Adam Brand and Naushad Variam

      Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300381

  11. Erratum

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    8. Invited Articles
    9. Contributed Articles
    10. Invited Articles
    11. Contributed Articles
    12. Erratum
    1. You have free access to this content
      Erratum: Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply (page 178)

      R. Kizu, M. Yamaguchi and H. Amano

      Article first published online: 2 JAN 2014 | DOI: 10.1002/pssc.201360002

      This article corrects:

      Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply

      Vol. 10, Issue 11, 1365–1368, Article first published online: 23 SEP 2013

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