physica status solidi (c)

Cover image for Vol. 11 Issue 2

Special Issue: E-MRS 2013 Spring Meeting – Symposium J • E-MRS 2013 Spring Meeting – Symposium L • E-MRS 2013 Spring Meeting – Symposium P, see further papers in Phys. Status Solidi A 211, No. 2 (2014)

February 2014

Volume 11, Issue 2

Pages 181–354

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
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      Cover Picture: Phys. Status Solidi C 2/2014

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201470036

      Thumbnail image of graphical abstract

      Impurity doping is one of the most important techniques to func-tionalize semiconducting nanowires such as silicon and germanium nanowires (SiNWs and GeNWs) for the application to next-generation field effect transistors, sensors, and solar cells. Impurity doping of NWs is generally performed in situ during vapor–liquid–solid (VLS) growth of NWs or ion implantation after growth of NWs. In order to know the status of dopant atoms and to control the impurity doping in NWs, characterization techniques of dopant atoms become more and more important. Naoki Fukata (on pp. 320–330) focused on Raman and electron spin resonance (ESR) to experimentally characterize the bonding states and electrical activities of dopant atoms in addition to scanning electron microscope (SEM), transmission electron microscope (TEM), and X-ray diffraction (XRD) methods. Until now, the author has observed local vibrational modes of B (11B and 10B) and P atoms, asymmetric broadening of optical phonon peaks due to the Fano effect, and ESR signal of conduction electrons in NWs, demonstrating that the dopant atoms are located at substitutional site of Si and Ge atoms and electrically activated in them. These are the first observations in SiNWs and GeNWs clearly showing the formation of p-type and n-type SiNWs and GeNWs. The behaviors of dopant atoms were also clarified by using the same characterization method. The characterization methods shown in this paper will be one of the powerful methods to know the status of dopant atoms in nanoscale materials.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
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      Back Cover: Phys. Status Solidi C 2/2014

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201470037

      Thumbnail image of graphical abstract

      Tungsten trioxide, amongst other metal oxides, exhibits excellent gas-sensing properties. This material is an n-type wide bandgap material, which is especially good at sensing oxidizing gases such as nitrogen dioxide. On pp. 349–354, Govender and coworkers realized that nanomaterials of tungsten trioxide allow for the tailor-making towards specific purposes and applications. However, incorporating this material into a nanosensor is still a big challenge, but is a step towards the development of low-powered devices with improved sensing capabilities for air quality monitoring. Due to the advancements in the field of nanoscience and nano¬technology, the development of nanosensors has been moving for¬ward. The use of a Focused Ion Beam (FIB) allows for making electrical contacts on micro- and nano-structures, and can be simultaneously imaged under a Scanning Electron Microscope (SEM). This creates an electrical circuit with the sensing material, which allows the monitoring of single structure's properties when interacting with a gas.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
    1. You have free access to this content
      Issue Information: Phys. Status Solidi C 2/2014

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201470038

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
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      Contents: Phys. Status Solidi C 2/2014 (pages 181–185)

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201470039

  5. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
  6. E-MRS 2013 Spring Meeting – Symposium J • Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
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      Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications (pages 193–194)

      Pascal André, Peter Reece, Jens W. Tomm, Jean-Charles Ribierre and Iwan Moreels

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201470040

  7. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
    1. Structures with two-dimensional distributed feedback for a laser realization on Si:Er basis (pages 195–199)

      Margarita Stepikhova, Vladimir Baryshev, Naum Ginzburg, Sergey Vdovichev, Boris Gribkov, Alexander Klimov and Zachary Krasilnik

      Article first published online: 23 JAN 2014 | DOI: 10.1002/pssc.201300384

    2. Measurement of electric field enhanced optical absorption in hydrogenated amorphous silicon (pages 200–205)

      Matija Pirc, Jože Furlan, Andrej Levstek and Marko Topič

      Article first published online: 23 JAN 2014 | DOI: 10.1002/pssc.201300176

    3. Interfaces

      Analysis of carrier injection in Si nanoparticle-SiOx film based MOS devices (pages 206–210)

      E. Jacques, L. Pichon, C. Labbe, L. Khomenkova and F. Gourbilleau

      Article first published online: 23 JAN 2014 | DOI: 10.1002/pssc.201300379

    4. Photonic devices and heterojunction

      Logic functions based on optical bias controlled SiC tandem devices (pages 211–216)

      V. Silva, M. A. Vieira, M. Vieira, P. Louro, A. Fantoni and M. Barata

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300572

    5. Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates (pages 217–221)

      Kyungwhan Yang, Kiyeol Kwak and Sangsig Kim

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300388

    6. Electrical modeling of the GaAs/InP wafer bonded heterojunction (pages 222–227)

      Xavier Blot, Pascal Scheiblin, Hubert Moriceau, William Van Den Daele, Christophe Lecouvey, Daniel Delprat, Aurélie Tauzin, Charlotte Drazek and Eric Guiot

      Article first published online: 23 JAN 2014 | DOI: 10.1002/pssc.201300386

    7. Viability of the use of thin-film a-SiC:H photodiodes for protein identification (pages 228–233)

      P. Louro, V. Silva, A. Karmali and M. Vieira

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300576

    8. Role of ZnO nanoparticle-layers in enhancement of the performance of organic light-emitting diodes on plastics (pages 234–237)

      Kiyeol Kwak, Kyoungah Cho and Sangsig Kim

      Article first published online: 23 JAN 2014 | DOI: 10.1002/pssc.201300387

  8. E-MRS 2013 Spring Meeting – Symposium L • Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
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      Group III Nitrides (page 238)

      Jürgen Christen and Bernard Gil

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201470041

  9. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
    1. AlGaN based MEMS structures (pages 239–243)

      Bernd Hähnlein, Katja Tonisch, Gernot Ecke, Rolf Grieseler, Steffen Michael, Peter Schaaf and Jörg Pezoldt

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300153

    2. The (0001)A surface phase diagram (pages 244–248)

      Vyacheslav A. Elyukhin

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300188

    3. Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100) (pages 249–252)

      Udo Ch. Kaletta, D. Wolansky, M. Fraschke Ch. Wipf and Ch. Wenger

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300194

    4. Sequential multiple-step europium ion implantation and annealing of GaN (pages 253–257)

      S. M. C. Miranda, P. R. Edwards, K. P. O'Donnell, M. Boćkowski, E. Alves, I. S. Roqan, A. Vantomme and K. Lorenz

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300210

    5. Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates (pages 258–260)

      Yuh-Shiuan Liu, Zachary Lochner, Tsung-Ting Kao, Md. Mahbub Satter, Xiao-Hang Li, Jae-Hyun Ryou, Shyh-Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer and Fernando Ponce

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300213

    6. Properties of AlN based lateral polarity structures (pages 261–264)

      Ronny Kirste, Seiji Mita, Marc P. Hoffmann, Lindsay Hussey, Wei Guo, Isaac Bryan, Zachary Bryan, James Tweedie, Michael Gerhold, Axel Hoffmann, Ramón Collazo and Zlatko Sitar

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300287

    7. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001) (pages 265–268)

      R. M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D. J. As and J. K. N. Lindner

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300292

    8. Spatial distribution of free carrier concentration in vertical GaN Gunn-diode structures studied by confocal micro-Raman spectroscopy and Kelvin probe force microscopy (pages 269–273)

      V. V. Strelchuk, A. S. Nikolenko, P. M. Lytvyn, A. S. Romanyuk, Yu. I. Mazur, M. E. Ware, E. A. DeCuir Jr., G. J. Salamo and A. E. Belyaev

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300294

    9. Biological detection by high electron mobility transistor (HEMT) based AlGaN/GaN (pages 274–279)

      Oussama Zeggai, Amaria Ould-Abbas, Mama Bouchaour, Hichem Zeggai, Nordine Sahouane, Malika Madani, Djamel Trari, Meriem Boukais and N.-E. Chabane-Sari

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300296

    10. Side gate AlGaN/GaN FET on silicon and sapphire (pages 280–283)

      Lars Hiller, Katja Tonisch and Jörg Pezoldt

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300298

    11. Quantitative determination of compositional profiles using HAADF image simulations (pages 284–288)

      R. El Bouayadi, M. Korytov, P. A. van Aken, P. Vennéguès and M. Benaissa

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300305

    12. Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures (pages 289–292)

      J. Kioseoglou, Ph. Komninou, J. Chen, G. Nouet, E. Kalesaki and Th. Karakostas

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300306

    13. Void formation during GaN MOVPE on Si (111) employing low temperature AlN interlayers (pages 293–296)

      Cai Liu, Hongbo Wang, Hassanet Sodabanlu, Masakazu Sugiyama and Yoshiaki Nakano

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300309

    14. Excitons and exciton-phonon coupling in the optical response of GaN (pages 297–301)

      S. Shokhovets, F. Bärwolf, G. Gobsch, E. Runge, K. Köhler and O. Ambacher

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300311

    15. Normally-off GaN MOSFETs with high-k dielectric CeO2 films deposited by RF sputtering (pages 302–306)

      Hiroki Ogawa, Takuya Okazaki, Hayao Kasai, Kenta Hara, Yuki Notani, Yasuhiro Yamamoto and Tohru Nakamura

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300314

    16. Ab initio study of macroscopic polarization of AlN, GaN and AlGaN (pages 307–311)

      Irina Supryadkina, Karine Abgaryan, Dmitry Bazhanov and Ilya Mutigullin

      Article first published online: 20 JAN 2014 | DOI: 10.1002/pssc.201300756

  10. E-MRS 2013 Spring Meeting – Symposium P • Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
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      Functional Nanowires: Synthesis, Characterization and Applications (pages 313–314)

      Bianchi Méndez, Katharina Lorenz, Beatrice Fraboni and Oliver Ambacher

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201470042

  11. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
    1. Doping features

      Investigation on Mn doping of Ge nanowires for spintronics (pages 315–319)

      C. Renard, L. Vincent, C. Gardès, R. Boukhicha, E. Oliviero, G. Patriarche, F. Fossard, S. Hajjar, J. L. Bubendorff, C. Pirri and D. Bouchier

      Article first published online: 3 FEB 2014 | DOI: 10.1002/pssc.201300150

  12. E-MRS 2013 Spring Meeting – Symposium P • Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
    1. Group IV nanowires

      Doping and characterization of impurity atoms in Si and Ge nanowires (pages 320–330)

      Naoki Fukata

      Article first published online: 3 FEB 2014 | DOI: 10.1002/pssc.201300106

  13. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Invited Article
    7. E-MRS 2013 Spring Meeting – Symposium J • Preface
    8. E-MRS 2013 Spring Meeting – Symposium J • Contributed Articles
    9. E-MRS 2013 Spring Meeting – Symposium L • Preface
    10. E-MRS 2013 Spring Meeting – Symposium L • Contributed Articles
    11. E-MRS 2013 Spring Meeting – Symposium P • Preface
    12. E-MRS 2013 Spring Meeting – Symposium P • Contributed Article
    13. E-MRS 2013 Spring Meeting – Symposium P • Invited Article
    14. E-MRS 2013 Spring Meeting – Symposium P • Contributed Articles
    1. Group IV nanowires

    2. Growth features

      Metals' roles during Ag and Au assisted silicon etching in HF aqueous solution (pages 337–343)

      M. Abouda Lachiheb, N. Nafie, M. Ben Rabha and M. Bouaïcha

      Article first published online: 3 FEB 2014 | DOI: 10.1002/pssc.201300120

    3. Applications

      N-type in-situ doping effect on vapour-liquid-solid silicon nanowire properties for gas sensing applications (pages 344–348)

      L. Pichon, R. Rogel, E. Jacques and A. C. Salaun

      Article first published online: 3 FEB 2014 | DOI: 10.1002/pssc.201300206

    4. Electrical and optical properties of mixed phase tungsten trioxide films grown by laser pyrolysis (pages 349–354)

      M. Govender, B. W. Mwakikunga, A. G. J. Machatine and H. W. Kunert

      Article first published online: 3 FEB 2014 | DOI: 10.1002/pssc.201300212

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