physica status solidi (c)

Cover image for Vol. 11 Issue 3‐4

Special Issue: 10th International Conference on Nitride Semiconductors (ICNS-10)

April 2014

Volume 11, Issue 3-4

Pages 355–960

Issue edited by: Charles R. “Chip” Eddy, Jr., Martin Kuball, Daniel D. Koleske, Hiroshi Amano

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
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      Cover Picture: Phys. Status Solidi C 3–4/2014

      Article first published online: 8 APR 2014 | DOI: 10.1002/pssc.201470043

      Thumbnail image of graphical abstract

      A hexagonal closed-packed array of nano-pillars patterned by nanosphere litho-graphy is embedded within an InGaN light-emitting diode by means of epitaxial lateral overgrowth. Li and coworkers describe on pp. 742–745 that the regrowth of a continuous p-doped contact layer across the nanostructures enables bridging of tens of thousands of nano-emitters, whilst fulfilling the task of electrical isolation between the p- and n-doped layers concurrently, representing a pio-neering technique for realizing nano-LED practically. As the nano-pillars are embedded within the LED beneath the regrown layer, the air gaps between pillars, as well as their light extraction enhancing capabilities, are fully retained even after device encapsulation. The nano-pillar structures also contribute to strain relaxation of the quantum wells, evident from the mild spectral shifts with increasing injection currents compared to conventional LEDs.

  2. Inside Front Cover

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. You have free access to this content
      Inside Front Cover: Phys. Status Solidi C 3–4/2014

      Article first published online: 8 APR 2014 | DOI: 10.1002/pssc.201470044

      Thumbnail image of graphical abstract

      In typical designs of planar nitride green light emitting diodes (LEDs), the active layers suffer from a large strain between the InGaN quantum wells (QWs) and the underlying n-GaN layer. Stranski–Krastanov quantum dots (SK QDs), character-ized by their small sizes and potential for efficient strain accommodation, may allow the growth of defect-free LED active layers at green wavelengths. However, SK growth, being ultimately conditioned by strain and relative surface energies of the system, is sensitive to the substrate defects. In contrast to planar GaN substrates which comprise high amounts of dislocations, GaN nanowires (NWs) can be grown dislocation-free and therefore act as ideal templates for the growth of nitride SK QDs. In their work, Bi and coworkers (see pp. 421–424) used metal-organic vapor phase epitaxy to grow GaN NWs selectively through nanometer-scale circular openings in a SiN mask deposited on GaN/Si substrates. InN QDs were grown subsequently on such GaN NWs. The InN QDs show a high uni-formity in size, shape and density. The side facet edges of the GaN NWs act as energetically favorable nucleation sites, but QD growth can also be realized on the side facets by changing the vapor phase supersaturation and the growth temperature. Periodic formation of I1-type stacking faults is observed along the c-axis of the InN QDs, attributed to a large lattice mismatch (about 10%) between InN and GaN.

  3. Back Cover

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    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
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      Back Cover: Phys. Status Solidi C 3–4/2014

      Article first published online: 8 APR 2014 | DOI: 10.1002/pssc.201470045

      Thumbnail image of graphical abstract

      As the efficiency and output power of III-nitride blue laser diodes (LDs) improve, they potentially become interesting for solid-state lighting (SSL). In fact, state-of-the-art blue LDs have higher efficiencies than blue light-emitting diodes (LEDs) when driven at high input powers. This is because the processes that cause the drop in efficiency at high powers in LEDs are clamped in LDs operated under stimulated emission. In their paper on pp. 674–677, Wierer and coworkers show that blue LDs have the potential to be nearly as efficient as blue LEDs, and also with similar white lumen output when pumping phosphors. Therefore, a white source consisting of phosphors pumped by a blue LD could someday become a competitive and viable SSL source. A simple demonstration is shown in the cover photo where a collimated blue LD beam (right) is directed and absorbed from the edge in a traditional phosphor plate used for LEDs (left) to produce brilliant white light. (Photograph by Randy Montoya of Sandia National Laboratories. Phosphors in photograph courtesy of Intematix.)

  4. Issue Information

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
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      Issue Information: Phys. Status Solidi C 3–4/2014

      Article first published online: 8 APR 2014 | DOI: 10.1002/pssc.201470046

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
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      Contents: Phys. Status Solidi C 3–4/2014 (pages 355–369)

      Article first published online: 8 APR 2014 | DOI: 10.1002/pssc.201470047

  6. Preface

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
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      Nitride Semiconductors (pages 370–372)

      Jaime A. Freitas Jr., Christian Wetzel, Charles R. Eddy Jr. and Asif Khan

      Article first published online: 8 APR 2014 | DOI: 10.1002/pssc.201470048

  7. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Bulk and thin film growth

      High temperature HVPE of AlN on sapphire templates (pages 373–376)

      Troy Baker, Ashley Mayo, Zeinab Veisi, Peng Lu and Jason Schmitt

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300496

    2. MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs (pages 377–380)

      A. Knauer, U. Zeimer, V. Kueller and M. Weyers

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300415

    3. InGaN doping for high carrier concentration in plasma-assisted molecular beam epitaxy (pages 381–384)

      Iulian Gherasoiu, Kin Man Yu, Lothar A. Reichertz and Wladek Walukiewicz

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300460

    4. Photoluminescence of magnesium and silicon doped cubic GaN (pages 385–388)

      R. E. L. Powell, S. V. Novikov, C. T. Foxon, A. V. Akimov and A. J. Kent

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300468

    5. Tunable thermal quenching of photoluminescence in GaN (pages 389–392)

      M. A. Reshchikov, J. D. McNamara and F. Shahedipour-Sandvik

      Article first published online: 24 MAR 2014 | DOI: 10.1002/pssc.201300540

    6. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy (pages 393–396)

      Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda and Hiroshi Amano

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300670

    7. Wafer curvature, temperature inhomogeneity, plastic deformation and their impact on the properties of GaN on silicon power and opto-electronic structures (pages 397–400)

      Oliver Schulz, Armin Dadgar, Jonas Hennig, Oliver Krumm, Stephanie Fritze, Jürgen Bläsing, Hartmut Witte, Annette Diez and Alois Krost

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300471

    8. Fabrication of freestanding {20equation image1} GaN substrates by HVPE using SiO2 masked GaN templates (pages 401–404)

      Keisuke Yamane, Yasuhiro Hashimoto, Hiroshi Furuya, Takashi Inagaki, Narihito Okada and Kazuyuki Tadatomo

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300484

    9. Vacancy defects in UV-transparent HVPE-AlN (pages 405–407)

      Tanja Kuittinen, Filip Tuomisto, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Akinori Koukitu, Ramón Collazo and Zlatko Sitar

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300529

    10. Pulsed modulation doping of AlxGa1-xN (x>0.6) AlGaN epilayers for deep UV optoelectronic devices (pages 408–411)

      Hung-Chi Chen, Iftikhar Ahmad, Bin Zhang, Antwon Coleman, Mahbuba Sultana, Vinod Adivarahan and Asif Khan

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300661

    11. Is the Fermi-level pinned on InN grown surfaces? (pages 412–416)

      Songrui Zhao and Zetian Mi

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300556

    12. Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy (pages 417–420)

      Richard F. Webster, David Cherns, Sergei V. Novikov and C. Thomas Foxon

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300454

    13. InN quantum dots on GaN nanowires grown by MOVPE (pages 421–424)

      Zhaoxia Bi, David Lindgren, B. Jonas Johansson, Martin Ek, L. Reine Wallenberg, Anders Gustafsson, Magnus T Borgström, Jonas Ohlsson, Bo Monemar and Lars Samuelson

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300551

    14. Characterisation of 3D-GaN/InGaN core-shell nanostructures by transmission electron microscopy (pages 425–427)

      Ian Griffiths, David Cherns, Xue Wang, Hergo-Heinrich Wehman, Martin Mandl, Martin Strassburg and Andreas Waag

      Article first published online: 10 MAR 2014 | DOI: 10.1002/pssc.201300522

    15. Impact of potassium and water on the electronic properties of InN(0001) surfaces (pages 428–431)

      S. Reiß, A. Eisenhardt, S. Krischok and M. Himmerlich

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300533

    16. Cross slip of dislocation loops in GaN under shear (pages 432–436)

      Chi-Chin Wu, N. Scott Weingarten and Peter W. Chung

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300546

    17. Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si (111) (pages 437–441)

      Benjamin Leung, Jung Han and Qian Sun

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300690

    18. III-nitride nanowire based light emitting diodes on carbon paper (pages 442–445)

      Michael A. Mastro, Travis J. Anderson, Marko J. Tadjer, Francis J. Kub, Jennifer K. Hite, Jihyun Kim and Charles R. Eddy Jr.

      Article first published online: 24 MAR 2014 | DOI: 10.1002/pssc.201300537

    19. Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200 mm Si(111) substrates (pages 446–449)

      Ming Zhao, Yoga Saripalli, Prem Kumar Kandaswamy, Hu Liang, Andrea Firrincieli, Stefaan Decoutere and Eric Vancoille

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300478

    20. AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs (pages 450–453)

      Prem Kumar Kandaswamy, Hu Liang, Ming Zhao, Saripalli Yoga, Eric Porter Carlson, Sarad Bahadur Thapa, Marleen Van Hove, Olivier Richard, Brecht DeVos, Eric Vancoille and Barun Dutta

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300524

    21. Surface preparation of non-polar single-crystalline AlN substrates (pages 454–457)

      Isaac Bryan, Christer-Rajiv Akouala, James Tweedie, Zachary Bryan, Anthony Rice, Ronny Kirste, Ramón Collazo and Zlatko Sitar

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300401

    22. Role of growth parameters in equalizing simultaneous growth of N- and Ga-polar GaN by MOCVD (pages 458–461)

      Jennifer K. Hite, Rachel Zoll, Michael A. Mastro and Charles R. Eddy Jr.

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300675

    23. Growth of ternary wurtzite BAlN and BGaN by ENABLE-MBE (pages 462–465)

      Todd L. Williamson, Nina R. Weisse-Bernstein and Mark A. Hoffbauer

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300741

    24. The effect of delta-doping on Si-doped Al rich n-AlGaN on AlN template grown by MOCVD (pages 466–468)

      Shaoxin Zhu, Jianchang Yan, Yun Zhang, Jianping Zeng, Zhao Si, Peng Dong, Jinmin Li and Junxi Wang

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300412

    25. X-ray diffraction analysis of structural defects in a-plane GaN grown on r-plane sapphire by MOCVD (pages 469–472)

      Qing S. Paduano and David W. Weyburne

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300325

    26. Strain states in GaN films grown on Si(111) and Si(110) substrates using a thin AlN/GaN superlattice interlayer (pages 473–476)

      X. Q. Shen, T. Takahashi, T. Ide and M. Shimizu

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300503

    27. The control of mechanical bow for GaN substrate grown by HVPE with relatively longer radius of lattice curvature (pages 477–482)

      Hae-Yong Lee, Young-Jun Choi, Jin-Hun Kim, Hyun-Soo Jang, Hae-Kon Oh, Jun Young Kim, Jung Young Jung and Jonghee Hwang

      Article first published online: 24 MAR 2014 | DOI: 10.1002/pssc.201300514

    28. Luminescence of erbium doped aluminum nitride nanoparticles synthesized using inert gas condensation (pages 483–486)

      Sneha G. Pandya and Martin E. Kordesch

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300487

    29. Structural analysis of N-polar AlN layers grown on Si (111) substrates by high resolution X-ray diffraction (pages 487–490)

      Mahesh Pandikunta, Oleg Ledyaev, Vladimir Kuryatkov and Sergey A. Nikishin

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300428

    30. Investigation of GaN layers grown by high temperature vapor phase epitaxy (pages 491–494)

      G. Lukin, C. Röder, M. Barchuk, G. Schreiber, O. Pätzold, J. Kortus, D. Rafaja and M. Stelter

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300482

    31. Ultra-thin barrier quaternary InAlGaN HEMTs with state of the art sheet resistance (pages 495–497)

      Xiang Gao, Ming Pan, Daniel Gorka, Mark Oliver, Michael Schuette, Andrew Ketterson and Paul Saunier

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300669

    32. GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers (pages 498–501)

      Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton and J.-C. De Jaeger

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300453

    33. Effect of nano-column properties on self-separation of thick GaN layers grown by HVPE (pages 502–504)

      V. Nikolaev, A. Golovatenko, M. Mynbaeva, I. Nikitina, N. Seredova, A. Pechnikov, V. Bougrov and M. Odnobludov

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300432

    34. Characterization of InGaN quantum disks in GaN nanowires (pages 505–508)

      A. Roshko, R. H. Geiss, J. B. Schlager, M. D. Brubaker, K. A. Bertness, N. A. Sanford and T. E. Harvey

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300639

    35. Fourier transform infrared spectroscopy analysis of thin boron nitride films prepared by ion beam assisted deposition (pages 509–512)

      Masao Matsuoka, Mauro P. Langhi Jr., Sadao Isotani and José F. D. Chubaci

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300544

    36. Morphology evolution of MOCVD grown GaN epitaxial layers on nanoPSS (pages 513–516)

      Xianzhe Jiang, Zhizhong Chen, Junze Li, Shuang Jiang, Xiangning Kang and Guoyi Zhang

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300550

    37. Enhanced AlN nanostructures for pyroelectric sensors (pages 517–520)

      E. Crisman, A. Drehman, R. Miller, A. Osinsky, D. Volovik and V. Vasilyev

      Article first published online: 24 MAR 2014 | DOI: 10.1002/pssc.201300513

    38. Threading screw dislocations in GaN by the Heyd-Scuseria-Ernzerhof hybrid functional (pages 521–524)

      Masahiko Matsubara, Laurent Pizzagalli and Enrico Bellotti

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300680

    39. Improvements of MOVPE grown (11equation image2) oriented GaN on pre-structured sapphire substrates using a SiNx interlayer and HVPE overgrowth (pages 525–529)

      Marian Caliebe, Tobias Meisch, Benjamin Neuschl, Sebastian Bauer, Jeffrey Helbing, Dominik Beck, Klaus Thonke, Martin Klein, Dominik Heinz and Ferdinand Scholz

      Article first published online: 4 MAR 2014 | DOI: 10.1002/pssc.201300527

    40. Vacancy defect formation in PA-MBE grown C-doped InN (pages 530–532)

      Vera Prozheeva, Filip Tuomisto, Gregor Koblmüller, James S. Speck, Andreas Knübel and Rolf Aidam

      Article first published online: 4 MAR 2014 | DOI: 10.1002/pssc.201300507

    41. Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate (pages 533–536)

      Hu Liang, Yoga Saripalli, Prem Kumar Kandaswamy, Eric Porter Carlson, Paola Favia, Olivier Richard, Hugo Bender, Ming Zhao, Sarad Bahadur Thapa and Eric Vancoille

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300555

    42. (20equation image1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates (pages 537–540)

      Tobias Meisch, Maryam Alimoradi-Jazi, Martin Klein and Ferdinand Scholz

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300396

    43. An investigation into defect reduction techniques for growth of non-polar GaN on sapphire (pages 541–544)

      Danny Sutherland, Fabrice Oehler, Tongtong Zhu, James T. Griffiths, Thomas J. Badcock, Philip Dawson, Robert M. Emery, Menno J. Kappers, Colin J. Humphreys and Rachel A. Oliver

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300532

    44. Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method (pages 545–548)

      R. Radhakrishnan Sumathi

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300509

    45. Epitaxial lateral overgrowth of thick semipolar {11equation image2} GaN by hydride vapor phase epitaxy (pages 549–552)

      Yasuhiro Hashimoto, Hiroshi Furuya, Motohisa Ueno, Keisuke Yamane, Narihito Okada and Kazuyuki Tadatomo

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300483

    46. Crystalline quality improvement of GaN coalesced using nano-PSS with void-embedded nanostructure by MOVPE (pages 553–556)

      Junze Li, Zhizhong Chen, Xianzhe Jiang, Zhe Hu, Xiangning Kang and Guoyi Zhang

      Article first published online: 24 MAR 2014 | DOI: 10.1002/pssc.201300542

    47. Growth of semipolar {11equation image2} GaN using SiNx intermediate layer by hydride vapor phase epitaxy (pages 557–560)

      M. Ueno, Y. Hashimoto, K. Yamane, N. Okada and K. Tadatomo

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300520

    48. Characterization of InGaAsN solar-cell structures on Ge substrates (pages 561–564)

      K. Uesugi, S. Kuboya, S. Sanorpim and K. Onabe

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300488

    49. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN (pages 565–568)

      T. Hossain, D. Wei, N. Nepal, N. Y. Garces, J. K. Hite, H. M. Meyer III, C. R. Eddy Jr., Troy Baker, Ashley Mayo, Jason Schmitt and J. H. Edgar

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300659

    50. Epitaxial rare earth oxide and nitride buffers for GaN growth on Si (pages 569–572)

      Rytis Dargis, Robin Smith, F. Erdem Arkun and Andrew Clark

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300426

    51. Characterization of undoped and Si-doped bulk GaN fabricated by hydride vapor phase epitaxy (pages 573–576)

      Baozhu Wang, Pingping Yu, Bahadir Kucukgok, Andrew G. Melton, Na Lu and Ian T. Ferguson

      Article first published online: 10 MAR 2014 | DOI: 10.1002/pssc.201300678

    52. Growth of high crystal quality InN by ENABLE-MBE (pages 577–580)

      Joshua J. Williams, Todd L. Williamson, Mark A. Hoffbauer, Yong Wei, Nikolai N. Faleev and Christiana Honsberg

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300693

    53. Improved theoretical model of InN optical properties (pages 581–584)

      A. Ferreira da Silva, J. F. D. Chubaci, M. Matsuoka, J. A. Freitas Jr., J. G. Tischler, G. Baldissera and C. Persson

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300521

    54. Characterization of a-plane GaN templates grown by HVPE and high efficiency deep UV emitting AlGaN/AlN MQWs grown by MBE on such templates (pages 585–589)

      Adam Moldawer, Anirban Bhattacharyya, Lin Zhou, David J. Smith and Theodore D. Moustakas

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300685

    55. In situ temperature measurements for selective epitaxy of GaN nanowires (pages 590–593)

      Kris A. Bertness, Matt D. Brubaker, Todd E. Harvey, Shannon M. Duff, Aric W. Sanders and Norman A. Sanford

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300545

    56. The effect of growth parameters on the Mg acceptor in InxGa1-xN:Mg and AlxGa1-xN:Mg (pages 594–597)

      M. E. Zvanut, W. R. Willoughby, U. R. Sunay, D. D. Koleske, A. A. Allerman, Ke Wang, Tsutomu Araki and Yasushi Nanishi

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300515

    57. In-situ growth condition analysis of AlN interlayers for wafer curvature control in GaN MOVPE on Si (111) (pages 598–603)

      Cai Liu, Akihito Kumamoto, Hassanet Sodabanlu, Masakazu Sugiyama and Yoshiaki Nakano

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300528

    58. 2″-4″ diameter GaN-on-sapphire substrates free of wafer bow at all temperatures (pages 604–607)

      Edward A. Preble, Jacob H. Leach, Robert Metzger, Eugene Shishkin and Kevin A. Udwary

      Article first published online: 5 MAR 2014 | DOI: 10.1002/pssc.201300554

    59. Laser-assisted atom probe tomography of MBE grown GaN nanowire heterostructures (pages 608–612)

      N. A. Sanford, P. T. Blanchard, M. Brubaker, K. A. Bertness, A. Roshko, J. B. Schlager, R. Kirchhofer, D. R. Diercks and B. Gorman

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300579

    60. Thermodynamic and kinetic aspects of AlN crystal formation on (0001)Al2O3 surface by ammonia MBE (pages 613–616)

      Timur Malin, Vladimir Mansurov, Yury Galitsyn and Konstantin Zhuravlev

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300674

    61. Reduction of threading dislocation by recoating GaN island surface with SiN for high-efficiency GaN-on-Si-based LED (pages 617–620)

      Toshiki Hikosaka, Hisashi Yoshida, Naoharu Sugiyama and Shinya Nunoue

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300441

  8. Invited Article

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Optical devices, visible

      Status of GaN/SiC-based LEDs and their application in solid state lighting (pages 621–623)

      Hua-Shuang Kong, James Ibbetson and John Edmond

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300458

  9. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Optical devices, visible

      Excellent uniformity on large diameter GaN on silicon LED wafer (pages 624–627)

      Andrea Pinos, Wei-Sin Tan, Ashay Chitnis, Atsushi Nishikawa, Lars Groh, Cheng-Yu Hu, Saad Murad and Stephan Lutgen

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300477

    2. High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates (pages 628–631)

      Rei Hashimoto, Jongil Hwang, Shinji Saito and Shinya Nunoue

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300433

    3. Atomistic simulations of InGaN/GaN random alloy quantum well LEDs (pages 632–634)

      M. López, A. Pecchia, M. Auf der Maur, F. Sacconi, G. Penazzi and A. Di Carlo

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300450

    4. A dual-character InGaN/GaN multiple quantum well device for electroluminescence and photovoltaic absorption of near-mutually exclusive wavelengths (pages 635–639)

      Jian-Wei Ho, Surani-bin Dolmanan, Chuan Beng Tay, Qixun Wee, Andrew A. O. Tay and Soo-Jin Chua

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300420

    5. Assessment of factors limiting conversion efficiency of single-junction III-nitride solar cells (pages 640–643)

      Kirill A. Bulashevich and Sergey Yu. Karpov

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300389

    6. Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding (pages 644–647)

      Naoteru Shigekawa, Jianbo Liang, Noriyuki Watanabe and Akio Yamamoto

      Article first published online: 4 MAR 2014 | DOI: 10.1002/pssc.201300413

    7. GaN tubes with coaxial non- and semipolar GaInN quantum wells (pages 648–651)

      Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke and Ferdinand Scholz

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300526

    8. Recombination dynamics and internal quantum efficiency in InGaN (pages 652–655)

      Hideaki Murotani, Hiroya Andoh, Takehiko Tsukamoto, Toko Sugiura, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300437

    9. Lift-out procedures for atom probe tomography targeting nanoscale features in core-shell nanowire heterostructures (pages 656–661)

      Sonal Padalkar, James R. Riley, Qiming Li, George T. Wang and Lincoln J. Lauhon

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300489

    10. Europium-doped GaN(Mg): beyond the limits of the light-emitting diode (pages 662–665)

      K. P. O'Donnell, P. R. Edwards, M. J. Kappers, K. Lorenz, E. Alves and M. Boćkowski

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300519

    11. True-blue laser diodes grown by plasma-assisted MBE on bulk GaN substrates (pages 666–669)

      G. Muziol, H. Turski, M. Siekacz, P. Wolny, M. Sawicka, S. Grzanka, P. Perlin, T. Suski, Z. R. Wasilewski, I. Grzegory, S. Porowski and C. Skierbiszewski

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300665

    12. Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation (pages 670–673)

      Katarzyna Holc, Gerrit Lükens, Thomas Weig, Klaus Köhler, Joachim Wagner and Ulrich T. Schwarz

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300429

    13. The potential of III-nitride laser diodes for solid-state lighting (pages 674–677)

      Jonathan J. Wierer Jr., Jeffrey Y. Tsao and Dmitry S. Sizov

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300422

    14. Short period polar and nonpolar m InN/n GaN superlattices (pages 678–681)

      I. Gorczyca, T. Suski, G. Staszczak, X. Q. Wang, N. E. Christensen, A. Svane, E. Dimakis and T. D. Moustakas

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300424

    15. Time-resolved electroabsorption measurement of carrier velocity in inverted polarity In1-xGax N/GaN heterostructures due to internal electric fields (pages 682–685)

      Blair C. Connelly, Chad S. Gallinat, Nathaniel T. Woodward, Ryan W. Enck, Grace D. Metcalfe, Randy Tompkins, Kenneth A. Jones, Hongen Shen and Michael Wraback

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300681

    16. Evidence of lateral electric fields in c -plane III-V nitrides via terahertz emission (pages 686–689)

      Nathaniel Woodward, Ryan Enck, Chad S. Gallinat, Lee E. Rodak, Grace D. Metcalfe, James S. Speck, Hongen Shen and Michael Wraback

      Article first published online: 5 MAR 2014 | DOI: 10.1002/pssc.201300687

    17. Optical properties and carrier dynamics in m -plane InGaN quantum wells (pages 690–693)

      Saulius Marcinkevičius, Kathryn M. Kelchner, Shuji Nakamura, Steven P. DenBaars and James S. Speck

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300430

    18. High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime (pages 694–697)

      Matthew J. Davies, Tom J. Badcock, Philip Dawson, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300498

    19. Non-polar (11equation image0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy (pages 698–701)

      Robert M. Emery, Tongtong Zhu, Fabrice Oehler, Benjamin Reid, Robert A. Taylor, Menno J. Kappers and Rachel A. Oliver

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300525

    20. High temperature stability in non-polar (11equation image0) InGaN quantum dots: Exciton and biexciton dynamics (pages 702–705)

      B. P. L. Reid, T. Zhu, C. C. S. Chan, C. Kocher, F. Oehler, R. Emery, M. J. Kappers, R. A. Oliver and R. A. Taylor

      Article first published online: 4 MAR 2014 | DOI: 10.1002/pssc.201300666

    21. Carrier trapping induced abnormal temperature dependent photoluminescence properties of novel sandwiched structure InGaN quantum wells (pages 706–709)

      Juan He, Ding Li, K. Rajabi, Wei Yang, Lei Liu and Xiaodong Hu

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300689

    22. Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures (pages 710–713)

      Matthew J. Davies, Fabien C.-P. Massabuau, Philip Dawson, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300451

    23. Temperature-dependent ac current-voltage-capacitance characteristics of GaN-based light-emitting diodes under high forward bias (pages 714–717)

      Wei Yang, Ding Li, Juan He, Cunda Wang and Xiaodong Hu

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300434

    24. Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes (pages 718–721)

      Xiaoli Ji, Jun Ma, Xuecheng Wei, Ruifei Duan, Junxi Wang, Xiaoyan Yi, Yiping Zeng, Guohong Wang, Fuhua Yang and Jinmin Li

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300479

    25. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate (pages 722–725)

      Koji Okuno, Takahide Oshio, Naoki Shibata, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300470

    26. Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K (pages 726–729)

      J. D. McNamara, A. A. Baski and M. A. Reshchikov

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300553

    27. High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer (pages 730–733)

      Xinbo Zou, Ka Ming Wong, Wing Cheung Chong, Jun Ma and Kei May Lau

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300506

    28. Defect study of GaN based LED structure by electron beam induced current (pages 734–737)

      Tomas Grinys, Edgaras Jelmakas, Ignas Reklaitis, Skirmantas Lapinskas, Arūnas Kadys, Tadas Malinauskas, Chun-Han Lin, Chih-Chung Yang and Roland Tomašiūnas

      Article first published online: 4 MAR 2014 | DOI: 10.1002/pssc.201300683

    29. Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures (pages 738–741)

      Tom J. Badcock, Phil Dawson, Matthew J. Davies, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300481

    30. Embedding nano-pillar arrays into InGaN light-emitting diodes (pages 742–745)

      K. H. Li, K. Y. Zang, S. J. Chua and H. W. Choi

      Article first published online: 5 MAR 2014 | DOI: 10.1002/pssc.201300536

    31. Growth properties and electrochemical characterization of InGaN photoanodes with different In concentrations (pages 746–749)

      Matthias Finken, Ada Wille, Benjamin Reuters, Bernd Holländer, Michael Heuken, Holger Kalisch and Andrei Vescan

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300414

    32. The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells (pages 750–753)

      Matthew J. Davies, Philip Dawson, Fabien C.-P. Massabuau, Fabrice Oehler, Rachel A. Oliver, Menno J. Kappers, Thomas J. Badcock and Colin J. Humphreys

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300452

    33. All-epitaxial fabrication of a nanowire plasmon laser structure (pages 754–757)

      Michael A. Mastro, Jaime A. Freitas, Jennifer K. Hite and Charles R. Eddy Jr.

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300539

    34. Strain relief mechanisms and growth behavior of superlattice distributed Bragg reflectors (pages 758–761)

      Ada Wille, Benjamin Reuters, Matthias Finken, Frank Heyroth, Georg Schmidt, Michael Heuken, Holger Kalisch and Andrei Vescan

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300444

    35. Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap (pages 762–765)

      S. Schulz, M. A. Caro and E. P. O'Reilly

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300447

    36. Analysis of light extraction efficiency for gallium nitride-based coaxial microwall light-emitting diodes (pages 766–770)

      Mohsen Nami, Ashwin Rishinaramangalam and Daniel Feezell

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300456

    37. Advantages of the moth-eye patterned sapphire substrate for the high performance nitride based LEDs (pages 771–774)

      Toshiyuki Kondo, Tsukasa Kitano, Atsushi Suzuki, Midori Mori, Koichi Naniwae, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi and Isamu Akasaki

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300492

    38. Characterization of semipolar {11equation image2} light-emitting diodes using a hole blocking layer (pages 775–777)

      Kota Nakao, Muhammad Haziq, Yasumasa Okamura, Keisuke Yamane, Narihito Okada and Kazuyuki Tadatomo

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300511

    39. Photoluminescence of m-plane GaN grown on m-plane sapphire by MOCVD (pages 778–781)

      Qing S. Paduano, David W. Weyburne and David C. Look

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300328

    40. Optical devices, UV

      A III-nitride polarization enhanced electron filter for controlling the spectral response of solar-blind AlGaN/AlN/SiC photodiodes (pages 782–785)

      L. E. Rodak, A. V. Sampath, C. S. Gallinat, J. Smith, Y. Chen, Q. Zhou, J. C. Campbell, H. Shen and M. Wraback

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300684

    41. Correlation between optical and electrical performance of mid-ultraviolet light-emitting diodes on AlN substrates (pages 786–789)

      Craig G. Moe, Gregory A. Garrett, James R. Grandusky, Jianfeng Chen, Lee E. Rodak, Paul Rotella, Michael Wraback and Leo J. Schowalter

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300686

    42. Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks (pages 790–793)

      M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter and D. J. As

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300411

    43. Whispering gallery modes in GaN microdisks, microrods and nanorods grown by MOVPE (pages 794–797)

      Christian Tessarek, Martin Heilmann and Silke Christiansen

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300421

    44. Pseudomorphic AlxGa1-xN MQW based deep ultraviolet light emitting diodes over sapphire (pages 798–801)

      Fatima Asif, Hung-Chi Chen, Antwon Coleman, Iftikhar Ahmad, Bin Zhang, Joe Dion, Ahmad Heidari, Vinod Adivarahan and Asif Khan

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300682

    45. Solar-blind AlxGa1–xN MSM photodetectors on patterned AlN/sapphire templates with 0.4 < x < 1 (pages 802–805)

      A. Knigge, M. Brendel, F. Brunner, S. Einfeldt, A. Knauer, V. Kueller, U. Zeimer and M. Weyers

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300446

    46. Optical degradation and defect activation in MOVPE grown near surface InGaN quantum wells under low energy electron beam irradiation (pages 806–809)

      Lauri Riuttanen, Henri Nykänen, Sami Suihkonen and Markku Sopanen

      Article first published online: 4 MAR 2014 | DOI: 10.1002/pssc.201300530

    47. Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady-state photoluminescence measurements (pages 810–812)

      John B. Schlager, Matt D. Brubaker, Kris A. Bertness and Norman A. Sanford

      Article first published online: 10 MAR 2014 | DOI: 10.1002/pssc.201300535

    48. Characterization of HVPE-grown UV LED heterostructures (pages 813–816)

      Sergey Kurin, Andrey Antipov, Iosif Barash, Alexander Roenkov, Alexander Usikov, Heikki Helava, Valentin Ratnikov, Natalia Shmidt, Alexey Sakharov, Sergey Tarasov, Ekaterina Menkovich, Ivan Lamkin, Boris Papchenko and Yuri Makarov

      Article first published online: 5 MAR 2014 | DOI: 10.1002/pssc.201300459

    49. Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side (pages 817–820)

      Thorsten Passow, Michael Kunzer, Paul Börner, Wilfried Pletschen, Klaus Köhler and Joachim Wagner

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300417

    50. Surface stability of n-type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions (pages 821–823)

      Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano and Katsushi Fujii

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300466

    51. Experimental and theoretical study of dephasing processes in the kinetics of photoexcited carriers in GaN (pages 824–827)

      Gregory A. Garrett, Sara Shishehchi, Sergey Rudin, Vladimir Malinovsky, Michael Wraback and Enrico Bellotti

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300688

    52. Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications (pages 828–831)

      Md. Mahbub Satter, Yuh-Shiuan Liu, Tsung-Ting Kao, Zachary Lochner, Xiaohang Li, Jae-Hyun Ryou, Shyh-Chiang Shen, Theeradetch Detchprohm, Russell D. Dupuis and P. Douglas Yoder

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300679

    53. Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region (pages 832–835)

      A. Z. M. Touhidul Islam, N. Murakoshi, T. Fukuda, H. Hirayama and N. Kamata

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300405

    54. Improvement of light extraction efficiency of 350-nm emission UV light-emitting diodes (pages 836–839)

      Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

      Article first published online: 10 MAR 2014 | DOI: 10.1002/pssc.201300517

    55. Optical anisotropy of m -plane nitride air-gap distributed Bragg reflector microcavities (pages 840–843)

      Renchun Tao, Munetaka Arita, Satoshi Kako and Yasuhiko Arakawa

      Article first published online: 4 FEB 2014 | DOI: 10.1002/pssc.201300476

  10. Invited Article

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Electrical devices

      Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor (pages 844–847)

      Raphael Brown, Abdullah Al-Khalidi, Douglas Macfarlane, Sanna Taking, Gary Ternent, Iain Thayne and Edward Wasige

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300179

  11. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Inside Front Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Electrical devices

      MIT virtual source GaNFET-high voltage (MVSG-HV) model: A physics based compact model for HV-GaN HEMTs (pages 848–852)

      Ujwal Radhakrishna, Tadahiro Imada, Tomás Palacios and Dimitri Antoniadis

      Article first published online: 5 MAR 2014 | DOI: 10.1002/pssc.201300392

    2. GaN microwave varactors with insulated electrodes (pages 853–856)

      Mikhail Gaevski, Jianyu Deng, Remis Gaska, Michael Shur and Grigory Simin

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300667

    3. Improved current stability in multi-mesa-channel AlGaN/GaN transistors (pages 857–861)

      Joel Asubar, Kota Ohi, Kenya Nishiguchi and Tamotsu Hashizume

      Article first published online: 10 MAR 2014 | DOI: 10.1002/pssc.201300672

    4. Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region (pages 862–865)

      Jie Hu, Silvia Lenci, Steve Stoffels, Brice De Jaeger, Guido Groeseneken and Stefaan Decoutere

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300472

    5. Static and transient characteristics of GaN power HFETs with low-conducting coating (pages 866–870)

      Mikhail Gaevski, Jianyu Deng, Alexander Dobrinsky, Remigijus Gaska, Michael Shur and Grigory Simin

      Article first published online: 24 MAR 2014 | DOI: 10.1002/pssc.201300541

    6. Wafer-scale GaN HEMT performance enhancement by diamond substrate integration (pages 871–874)

      G. D. Via, J. G. Felbinger, J. Blevins, K. Chabak, G. Jessen, J. Gillespie, R. Fitch, A. Crespo, K. Sutherlin, B. Poling, S. Tetlak, R. Gilbert, T. Cooper, R. Baranyai, J. W. Pomeroy, M. Kuball, J. J. Maurer and A. Bar-Cohen

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300504

    7. Flash MOS-HFET operational stability for power converter circuits (pages 875–878)

      Casey Kirkpatrick, Bongmook Lee, Narayanan Ramanan and Veena Misra

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300547

    8. Thermally robust RuOx Schottky diodes and HEMTs on III-nitrides (pages 883–886)

      Lwin Min Kyaw, Aju Abraham Saju, Yi Liu, Milan Kumar Bera, Sarab Preet Singh, Sudhiranjan Tripathy and Eng Fong Chor

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300502

    9. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz (pages 887–889)

      Satyaki Ganguly, Bo Song, Wan Sik Hwang, Zongyang Hu, Mingda Zhu, Jai Verma, Huili (Grace) Xing and Debdeep Jena

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300668

    10. Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si (pages 890–893)

      Tongde Huang, Jun Ma, Xing Lu, Zhao Jun Liu, Xueliang Zhu and Kei May Lau

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300493

    11. Comparison of thermoelectric properties of GaN and ZnO samples (pages 894–897)

      B. Kucukgok, B. Wang, A. G. Melton, N. Lu and I. T. Ferguson

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300538

    12. Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN (pages 898–901)

      D. Wei, T. Hossain, N. Nepal, N. Y. Garces, J. K. Hite, H. M. Meyer III, C. R. Eddy Jr. and J. H. Edgar

      Article first published online: 20 MAR 2014 | DOI: 10.1002/pssc.201300677

    13. Appropriate fabrication procedure for InAlN metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 (pages 902–905)

      Masahito Chiba, Takuma Nakano and Masamichi Akazawa

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300423

    14. Comparison of AlGaN/GaN MISHEMT powerbar designs (pages 906–910)

      Steve Stoffels, Nicoló Ronchi, Rafael Venegas, Brice De Jaeger, Denis Marcon and Stefaan Decoutere

      Article first published online: 7 FEB 2014 | DOI: 10.1002/pssc.201300490

    15. First-principles study on the conduction band electron states of GaAsN alloys (pages 911–913)

      Kei Sakamoto and Hiroyuki Yaguchi

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300531

    16. Nitrogen ion implantation isolation technology for normally-off GaN MISFETs on p-GaN substrate (pages 914–917)

      Hayao Kasai, Hiroki Ogawa, Tomoaki Nishimura and Tohru Nakamura

      Article first published online: 24 JAN 2014 | DOI: 10.1002/pssc.201300436

    17. High performance normally-off self-aligned metal gate GaN MISFETs on free-standing GaN substrates (pages 918–923)

      Hiroki Ogawa, Hayao Kasai, Naoki Kaneda, Tomonobu Tsuchiya, Tomoyoshi Mishima and Tohru Nakamura

      Article first published online: 28 JAN 2014 | DOI: 10.1002/pssc.201300440

    18. Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation (pages 924–927)

      Anna Malmros, Piero Gamarra, Mattias Thorsell, Marie-Antoinette di Forte-Poisson, Cedric Lacam, Maurice Tordjman, Raphaël Aubry, Herbert Zirath and Niklas Rorsman

      Article first published online: 22 JAN 2014 | DOI: 10.1002/pssc.201300320

    19. Degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive (pages 928–931)

      Baikui Li, Qimeng Jiang, Shenghou Liu, Cheng Liu and Kevin J. Chen

      Article first published online: 20 FEB 2014 | DOI: 10.1002/pssc.201300445

    20. Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy (pages 932–935)

      Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, Mahesh Kumar, Neeraj Sinha, V. M. Jali and S. B. Krupanidhi

      Article first published online: 10 MAR 2014 | DOI: 10.1002/pssc.201300486

    21. Evaluation of radiated emission of GaN-HEMT switching circuit (pages 936–939)

      Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu, Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda and Tsuyoshi Tanaka

      Article first published online: 19 MAR 2014 | DOI: 10.1002/pssc.201300494

    22. Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance (pages 940–944)

      Helmut Jung, Peter Abele, Jan Grünenpütt, Michael Hosch, Bernd Schauwecker, Hervé Blanck, Thomas Rödle and Michael Schäfer

      Article first published online: 27 FEB 2014 | DOI: 10.1002/pssc.201300416

    23. GaN-on-Si wafers for HEMTs with high power-driving capability (pages 945–948)

      Cheng-Yu Hu, Saad Murad, Atsushi Nishikawa, Lars Groh, Andrea Pinos, Weisin Tan, Ashay Chitnis, Victor Sizov, Takuma Yagi and Stephan Lutgen

      Article first published online: 17 FEB 2014 | DOI: 10.1002/pssc.201300534

    24. GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures (pages 949–952)

      Shu Yang, Qimeng Jiang, Baikui Li, Zhikai Tang and Kevin J. Chen

      Article first published online: 10 MAR 2014 | DOI: 10.1002/pssc.201300439

    25. AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film (pages 953–956)

      Cheng Liu, Shenghou Liu, Sen Huang, Baikui Li and Kevin J. Chen

      Article first published online: 5 MAR 2014 | DOI: 10.1002/pssc.201300442

    26. Investigation of the Ti/Al/Pt/Au and Ti/Au contact materials on the N-face surface of oxygen doped GaN (pages 957–960)

      Chia-Lung Tsai, Yi-Keng Fu, Hung-Tse Chen, Chin-Hsueh Chou and Rong Xuan

      Article first published online: 24 MAR 2014 | DOI: 10.1002/pssc.201300469

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