physica status solidi (c)

Cover image for Vol. 2 Issue 4

March 2005

Volume 2, Issue 4

Pages 1239–1448

Currently known as: physica status solidi (c)

    1. Advanced materials and characterization methods

      Stress-engineered orderings of self-assembled III–V semiconductor nanostructures (pages 1245–1250)

      J. Coelho, G. Patriarche, F. Glas, I. Sagnes and G. Saint-Girons

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460413

    2. Crystal growth and epitaxy

      Bowing of epitaxial layers grown on bulk GaN substrates (pages 1259–1264)

      M. Sarzyński, M. Kryśko, R. Czernecki, G. Targowski, B. Łucznik, G. Kamler, J. Domagała, I. Grzegory, M. Leszczyński and S. Porowski

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460422

    3. Probing the effect of temperature on the incorporation of Al species in a SiC matrix (pages 1265–1268)

      C. Jacquier, G. Ferro, M. Zielinski, E. K. Polychroniadis, A. Andreadou, J. Camassel and Y. Monteil

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460423

    4. Effect of Fe inter-diffusion on properties of InP layers grown with addition of RE elements (pages 1269–1274)

      O. Procházková, J. Zavadil and K. Zdánský

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460424

    5. Influence of rare earth holmium on the properties of lead iodide (pages 1275–1279)

      M. Matuchova, O. Prochazkova, J. Maixner, K. Zdansky and J. Zavadil

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460425

    6. On the nucleation model for gallium nitride films grown on sapphire (pages 1280–1283)

      E. N. Vigdorovich, A. A. Arendarenko, R. V. Kharlamov and Yu. N. Sveshnikov

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460426

    7. Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates (pages 1284–1287)

      Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri and J. Pezoldt

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460427

    8. Investigation of lattice plane bending in large (0001)SiC crystals using high-energy X-ray technique (pages 1288–1291)

      B. M. Epelbaum, Z. G. Herro, M. Bickermann, C. Seitz, A. Magerl, P. Masri and A. Winnacker

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460428

    9. Spinodal decomposition in GaInNAs/GaAs multi-quantum wells (pages 1292–1297)

      M. Herrera, D. González, M. Hopkinson, M. Gutiérrez, P. Navaretti, H. Y. Liu and R. García

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460429

    10. Structural, optical and electrical characterizations

    11. Detailed study of Ga low compositional substitution by In in polycrystalline GaSb (pages 1304–1309)

      A. Amariei, X. Chatzistavrou, Al. Stavrinadis, K. M. Paraskevopoulos and E. K. Polychroniadis

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460442

    12. Transmission electron microscopy of GaN layers grown by ELO and micro – ELO techniques (pages 1310–1313)

      B. Pécz, Zs. Makkai, E. Frayssinet, B. Beaumont and P. Gibart

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460443

    13. Optical properties of Ga2O3 doped ZnO nanoribbons (pages 1314–1318)

      M. Stoehr, S. Juillaguet, T. M. Kyaw and J. G. Wen

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460444

    14. Optical characterization of MOVPE grown δ-InAs layers in GaAs (pages 1319–1324)

      Pavel Hazdra, Jan Voves, Eduard Hulicius and Jiří Pangrác

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460445

    15. Excitonic emission and N- and B-incorporation in homoepitaxial CVD-grown diamond investigated by cathodoluminescence (pages 1336–1341)

      D. Araujo, M. Kadri, M. Wade, E. Bustarret and A. Deneuville

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460448

    16. Instability of electrical characteristics of GaAs/InAs quantum dot structures (pages 1342–1346)

      L. Dózsa, Zs. J. Horváth, E. Gombia, R. Mosca, S. Franchi, P. Frigeri, V. Raineri and F. Giannazo

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460449

    17. Deep-level transient conductance spectroscopy of high resistivity semiconductors (pages 1347–1354)

      Dimitri Alexiev, Dale Prokopovich, Mark I. Reinhard, Stuart Thomson and Li Mo

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460450

    18. High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN (pages 1355–1359)

      M. Siekacz, K. Dybko, C. Skierbiszewski, W. Knap, Z. Wasilewski, D. Maude, J. Łusakowski, W. Krupczyński, G. Nowak, M. Boćkowski and S. Porowski

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460451

    19. Optoelectronic materials and devices

      Defect related absorption and emission in AlGaN solar-blind UV photodetectors (pages 1360–1365)

      V. Lebedev, I. Cimalla, V. Cimalla, R. Wagner, U. Kaiser and O. Ambacher

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460458

    20. Microstructure of III-N semiconductors related to their applications in optoelectronics (pages 1366–1373)

      M. Leszczynski, R. Czernetzki, M. Sarzynski, M. Krysko, G. Targowski, P. Prystawko, M. Bockowski, I. Grzegory, T. Suski, J. Domagala and S. Porowski

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460459

    21. Optical investigations on Si-doped InN films (pages 1379–1383)

      B. Maleyre, O. Briot, S. Ruffenach and B. Gil

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460461

    22. QWIP structures prepared on wet-etched non-planar GaAs (pages 1384–1388)

      P. Štrichovanec, J. Novák, I. Vávra, R. Kúdela, M. Kučera and J. Šoltýs

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460462

    23. Photoelectric properties of highly excited ZnTe:V(Al, Sc) bulk crystals (pages 1389–1392)

      Arunas Kadys, Kestutis Jarasiunas, Markas Sudzius, Vytautas Gudelis, Ramunas Aleksiejunas and Jean-Claude Launay

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460463

    24. Arsenic pressure and spacer layer thickness effects on the optical properties of stacked InAs/InAlAs quantum dot array (pages 1399–1403)

      M. Hjiri, F. Hassen, H. Maaref, A. Jbeli, M. Senes, X. Marie, T. Amand, B. Salem, G. Bremond and M. Gendry

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460465

    25. Outcome of refinement of the thermal sensitivity Ga0.65In0.35As0.15Sb0.85/GaSb MQW laser (pages 1404–1409)

      O. Mashoshyna, I. Sukhoivanov, A. Joullie and V. Lysak

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460466

    26. Electronic devices and processing

      TeraHertz detectors based on plasma oscillations in nanometric Silicon Field Effect Transistors (pages 1413–1417)

      F. Teppe, Y. M. Meziani, N. Dyakonova, J. Łusakowski, F. Bœuf, T. Skotnicki, D. Maude, S. Rumyantsev, M. S. Shur and W. Knap

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460477

    27. Influence of the low energy ion beam milling on the electrical properties of InSb (pages 1418–1422)

      N. N. Berchenko, V. V. Bogoboyashchiy, I. I. Izhnin, M. Pociask, E. M. Sheregii and V. A. Yudenkov

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460478

    28. Schottky contacts to InP (pages 1423–1427)

      Zs. J. Horváth, E. Ayyildiz, V. Rakovics, H. Cetin and B. Põdör

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460479

    29. Electrical and Schottky contact properties of Pt/n-Si1–xGex/n-Si(100) heterostructure (pages 1428–1432)

      K. Ertürk, Yüksel Bektöre and M. Cüneyt Haciismailoglu

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460480

    30. Fabrication and characterization of stress-free microbeams for MEMS applications (pages 1433–1437)

      V. I. Shashkin, N. V. Vostokov, E. A. Vopilkin, A. Yu. Klimov, V. M. Daniltsev, V. V. Rogov and S. G. Lazarev

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460481

    31. High temperature electrical investigations of (Al,Ga)N/GaN heterostructures – Hall sensor applications (pages 1438–1443)

      Ch. Consejo, S. Contreras, L. Konczewicz, P. Lorenzini, Y. Cordier, C. Skierbiszewski and J. L. Robert

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssc.200460482

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