physica status solidi (c)

Cover image for Vol. 2 Issue 6

April 2005

Volume 2, Issue 6

Pages 1763–2009

Currently known as: physica status solidi (c)

    1. Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC (page 1763)

      L. Ottaviani, H. Idrissi, P. Hidalgo, M. Lancin and B. Pichaud

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200590005

    2. Structure of extended defects

      First principles modelling of (100) H-induced platelets in silicon (pages 1771–1780)

      Natalia Martsinovich, Irene Suárez Martínez and Malcolm I. Heggie

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460502

    3. Electronic structure of the KCl and AgCl nanocrystals with edge dislocations (pages 1788–1791)

      Yu. K. Timoshenko and V. A. Shunina

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460549

    4. Electronic and optical properties of precipitates and dislocations in semiconductors

      Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC (pages 1792–1796)

      L. Ottaviani, H. Idrissi, P. Hidalgo, M. Lancin and B. Pichaud

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460505

    5. SEM/EBIC investigations of extended defect system in GaN epilayers (pages 1797–1801)

      N. M. Shmidt, V. V. Sirotkin, A. A. Sitnikova, O. A. Soltanovich, R. V. Zolotareva and E. B. Yakimov

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460506

    6. Early stages of iron precipitation in silicon (pages 1802–1806)

      R. Khalil, V. Kveder, W. Schröter and M. Seibt

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460507

    7. Rod-like defects in CZ-Si investigated by spin resonance and photoluminescence spectroscopies (pages 1807–1811)

      T. Mchedlidze, S. Binetti, A. Le Donne, M. Suezawa and S. Pizzini

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460509

    8. Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high pressure (pages 1812–1816)

      A. Misiuk, B. Surma, C. A. Londos, J. Bak-Misiuk, W. Wierzchowski, K. Wieteska and W. Graeff

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460554

    9. Photoluminescence study of GaN with dislocations introduced by plastic deformation (pages 1817–1821)

      I. Yonenaga, H. Makino, S. Itoh and T. Yao

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460547

    10. Simulation of uncharged dislocation EBIC contrast at high excitation level (pages 1822–1826)

      Nikolay N. Negulyaev, Eugene B. Yakimov and Sergey I. Zaitsev

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460550

    11. Dislocation photoluminescence in silicon crystals of various impurity contents (pages 1827–1831)

      S. A. Shevchenko and A. N. Izotov

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460551

    12. Optical characterization of crystalline silicon embedded in a-Si matrix (pages 1832–1836)

      T. V. Torchynska, A. Vivas Hernandez, M. Dybiec, Yu. Emirov, I. Tarasov, S. Ostapenko and Yasuhiro Matsumoto

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460552

    13. Influence of the deformation on the luminescence properties of Si light-emitting diodes (pages 1842–1846)

      N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, O.V. Feklisova, E.B. Yakimov and T.V. Kotereva

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460514

    14. Interaction of impurities with dislocations

      Electrical properties of gold at dislocations in silicon (pages 1847–1851)

      O. Voß, V. V. Kveder, W. Schröter and M. Seibt

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460516

    15. Recombination activity and electrical levels of “clean” and copper contaminated dislocations in p-type Si (pages 1852–1858)

      O. F. Vyvenko, M. Kittler, W. Seifert and M. V. Trushin

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460517

    16. Spin-resonant change of unlocking stress for dislocations in silicon (pages 1869–1872)

      M. V. Badylevich, V. V. Kveder, V. I. Orlov and Yu. A. Ossipyan

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460534

    17. Magnetostimulated softening and hardening of semiconductors (pages 1873–1877)

      E. V. Darinskaya, E. A. Petrzhik, Yu. M. Ivanov, S. A. Erofeeva and M. R. Raukhman

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460553

    18. Simulation of oxygen- or carbon containing complexes at silicon-silicon interface in cluster approximation (pages 1886–1891)

      A. M. Saad, A. L. Pushkarchuk, A. K. Fedotov, S. A. Kuten and A. Mazanik

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460546

    19. Crystal growth and grown-in defects

      Temperature activated 1.2 eV photoluminescence in semi-insulating SiC wafers (pages 1892–1896)

      N. E. Korsunska, V. Kushnirenko, I. Tarasov and S. Ostapenko

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460521

    20. Study of defects in InxGa1–xSb bulk crystals (pages 1897–1901)

      C. Díaz-Guerra, M. F. Chioncel, J. Vincent, V. Bermúdez, J. Piqueras and E. Diéguez

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460522

    21. Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors (pages 1902–1906)

      I. A. Prokhorov, I. L. Shul'pina, V. I. Strelov, B. G. Zakharov and V. V. Ratnikov

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460557

    22. Epitaxial layers and heterostructures

      Fabrication of nanocrystal memories by ultra low energy ion implantation (pages 1907–1911)

      N. Cherkashin, C. Bonafos, H. Coffin, M. Carrada, S. Schamm, G. Ben Assayag, D. Chassaing, P. Dimitrakis, P. Normand, M. Perego, M. Fanciulli, T. Muller, K. H. Heinig and A. Claverie

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460523

    23. Surface control of cooperative phenomena in nanostructured materials with quantum dots (pages 1912–1916)

      S. V. Ivanov, A. G. Gladyshev, A. V. Kamanin, A. G. Kolmakov, N. V. Kryzhanovskaya, Yu. G. Musikhin, E. E. Baranov, V. N. Petrov, I. V. Sedova, N. M. Shmidt and A. N. Titkov

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460524

    24. Effect of interface states on population of quantum wells in SiGe/Si structures (pages 1924–1928)

      I. V. Antonova, M.S. Kag an, V. I. Polyakov, L. L. Golik and J. Kolodzey

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460526

    25. New challenge: extended defects in ferromagnetic semiconductors (pages 1929–1932)

      T. Figielski, T. Wosinski, O. Pelya and J. Sadowski

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460527

    26. Dislocation networks adapted to order the growth of III-V semiconductor nanostructures (pages 1933–1937)

      J. Coelho, G. Patriarche, F. Glas, I. Sagnes and G. Saint-Girons

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460528

    27. Thermally induced strain relaxation in SiGe/Si heterostructures with low-temperature buffer layers (pages 1938–1942)

      V. I. Vdovin, T. G. Yugova, M. M. Rzaev, F. Schäffler and M.G. Mil'vidskii

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460529

    28. Anisotropic strain relaxation in lattice-mismatched III–V epitaxial layers (pages 1943–1947)

      O. Yastrubchak, J. Z. Domagała, T. Wosiński, A. Kudła and K. Regiński

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460530

    29. Strain state of InAlAs/InP layers subjected to high pressure treatment (pages 1948–1952)

      A. Shalimov, J. Bak-Misiuk, J. Kaniewski, A. Misiuk, J. Domagala and E. Kowalczyk

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460555

    30. Defect diffusion and reactions

      Enhanced dopant solubility in strained silicon (pages 1953–1957)

      J. Adey, R. Jones and P. R. Briddon

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460535

    31. Precipitation and extended defect formation in silicon (pages 1958–1962)

      Jan Vanhellemont, Olivier De Gryse and Paul Clauws

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460536

    32. Effect of carbon on oxygen precipitation in Czochralski silicon (pages 1963–1967)

      C. A. Londos, M. S. Potsidi and V. V. Emtsev

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460537

    33. Generation of dislocations in annealed silicon wafers under applied stress (pages 1968–1972)

      M. V. Mezhennyi, M. G. Milvidskii, V. Ya. Reznik and R. J. Falster

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460538

    34. Fracture and plasticity

      The effect of dislocation core structure on the plastic and fracture behavior of GaAs and InP (pages 1973–1986)

      P. Pirouz, S. Wang, B. Bayu-Aji, M. Zhang and J.-L. Démenet

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460539

    35. TEM observations of the coexistence of perfect and dissociated dislocations in SiC under high stress (pages 1987–1991)

      J. L. Demenet, X. Milhet and J. Rabier

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460541

    36. Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending (pages 1998–2003)

      H. Idrissi, G. Regula, M. Lancin, J. Douin and B. Pichaud

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460544

    37. Polarity influence on the nanoindentation response of GaAs (pages 2004–2009)

      G. Patriarche, E. Le Bourhis, L. Largeau and J.-P. Rivière

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssc.200460548

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