physica status solidi (c)

Cover image for Vol. 2 Issue 7

May 2005

Volume 2, Issue 7

Pages 2011–2932

Currently known as: physica status solidi (c)

    1. Nitride micro-display with integrated micro-lenses (page 2011)

      H. W. Choi, E. Gu, J. M. Girkin and M. D. Dawson

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200590006

    2. Bulk growth

      Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties (pages 2027–2031)

      T. Paskova, V. Darakchieva, P. P. Paskov, J. Birch, E. Valcheva, P. O. Å. Persson, B. Arnaudov, S. Tungasmita and B. Monemar

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461481

    3. Bulk GaN growth by Gallium Vapor Transport technique (pages 2032–2035)

      Huaqiang Wu, Phanikumar Konkapaka, Yuri Makarov and Michael G. Spencer

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461553

    4. Polarity and morphology in seeded growth of bulk AlN on SiC (pages 2036–2039)

      R. Dalmau, R. Schlesser and Z. Sitar

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461511

    5. Characterisation of GaN crystals and epilayers grown from a solution at room pressure (pages 2040–2043)

      E. Meissner, B. Birkmann, S. Hussy, G. Sun, J. Friedrich and G. Mueller

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461473

    6. Structural properties of AlN crystals grown by physical vapor transport (pages 2044–2048)

      M. Bickermann, B. M. Epelbaum and A. Winnacker

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461422

    7. Hydride vapor phase epitaxial growth of thick GaN layers with improved surface flatness (pages 2049–2052)

      Frank Habel, Peter Brückner, Jenq-Dar Tsay, Wen-Yueh Liu, Ferdinand Scholz, Dietmar Schmitz, Assadullah Alam and Michael Heuken

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461459

    8. Growth and characterization of thick GaN layers with high Fe doping (pages 2058–2061)

      Y. Kumagai, H. Murakami, Y. Kangawa and A. Koukitu

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461410

    9. Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy (pages 2062–2065)

      T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai and A. Koukitu

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461551

    10. Single crystal growth of gallium nitride in supercritical ammonia (pages 2066–2069)

      Y. C. Lan, X. L. Chen, M. A. Crimp, Y. G. Cao, Y. P. Xu, T. Xu and K. Q. Lu

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461557

    11. Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates (pages 2070–2073)

      B. M. Epelbaum, P. Heimann, M. Bickermann and A. Winnacker

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461472

    12. Rapid synthesis of high purity GaN powder (pages 2074–2078)

      Huaqiang Wu, Janet Hunting, Francis J. DiSalvo and Michael G. Spencer

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461570

    13. Formation of AlN in laser ablated plasma of Al in nitrogen ambient (pages 2079–2082)

      Raj K. Thareja and A. K. Sharma

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461282

    14. Vapor phase epitaxy

      n-Al0.75Ga0.25N epilayers for 250 nm emission ultraviolet light emitting diodes (pages 2083–2086)

      W. H. Sun, J. W. Yang, J. P. Zhang, M. E. Gaevski, C. Q. Chen, J. W. Li, Z. Gong, M. Su and M. Asif Khan

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461561

    15. Characterization of MOCVD grown GaN on porous SiC templates (pages 2087–2090)

      F. Yun, S. Doğan, Y. T. Moon, Y. Fu, J. Xu, D. Johnstone and H. Morkoç

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461365

    16. Growth of high resistance thick GaN templates by HVPE (pages 2091–2094)

      R. B. Jain, R. S. Q. Fareed, J. Zhang, R. Gaska, E. Kuokstis, J. Yang, H. P. Maruska, M. A. Khan, J. Mickevicius, G. Tamulaitis and M. S. Shur

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461545

    17. Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate (pages 2095–2098)

      R. S. Qhalid Fareed, J. P. Zhang, R. Gaska, G. Tamulaitis, J. Mickevicius, R. Aleksiejunas, M. S. Shur and M. A. Khan

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461531

    18. Growth optimization for thick crack-free GaN layers on sapphire with HVPE (pages 2099–2103)

      E. Richter, Ch. Hennig, H. Kissel, G. Sonia, U. Zeimer and M. Weyers

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461487

    19. Growth of crack-free GaN films on Si(111) substrate and improvement of the crystalline quality using SixNy inserting layer (pages 2104–2108)

      Kang Jea Lee, Eun Ho Shin, Sang Kyun Shim, Tae Ki Kim, Gye Mo Yang and Kee Young Lim

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461283

    20. High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers (pages 2109–2112)

      C. Hallin, A. Kakanakova-Georgieva, P. Persson and E. Janzén

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461615

    21. Resistivity control of unintentionally doped GaN films (pages 2113–2116)

      A. P. Grzegorczyk, L. Macht, P. R. Hageman, M. Rudzinski and P. K. Larsen

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461415

    22. Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy (pages 2117–2120)

      R. Collazo, S. Mita, R. Schlesser and Z. Sitar

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461546

    23. GaN growth on (30&3macr;8) 4H-SiC substrate for reduction of internal polarization (pages 2121–2124)

      S. Kamiyama, A. Honshio, T. Kitano, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita and H. Shiomi

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461390

    24. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE (pages 2125–2128)

      Y. Honda, M. Okano, M. Yamaguchi and N. Sawaki

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461575

    25. Growth of gallium nitride via iodine vapor phase growth (pages 2129–2132)

      W. J. Mecouch, Z. J. Reitmeier, J.-S. Park, R. F. Davis and Z. Sitar

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461532

    26. Growth of crack-free GaN on maskless Si(111) by MOVPE (pages 2133–2136)

      X. Chen and T. Uesugi

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461401

    27. The influence of threading dislocation density on Hall effects in free-standing GaN substrates (pages 2137–2140)

      C. Lee, H. Y. Lee, H. Shin, C. Kim, H. Ko, J. Han, H. Kim and K. Lee

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461405

    28. Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers (pages 2141–2144)

      M. Rudziński, P. R. Hageman, A. P. Grzegorczyk, L. Macht, T. C. Rödle, H. F. F. Jos and P. K. Larsen

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461455

    29. Effects of indium incorporation in AlGaN on threading dislocation density (pages 2145–2148)

      H. Kang, S. Kandoor, S. Gupta, I. Ferguson, S. P. Guo and M. Pophristic

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461515

    30. Effects of V/III flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD (pages 2149–2152)

      R. J. Choi, S. Kubo, M. Tsukihara, K. Inoue, Y. Naoi, K. Nishino and S. Sakai

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461442

    31. Carrier profiles in Fe doped GaN layers grown by MOVPE (pages 2153–2156)

      M. Azize, Z. Bougrioua, P. Girard and P. Gibart

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461535

    32. MOCVD growth of InGaN:Mg for GaN/InGaN HBTs (pages 2157–2160)

      T. Chung, J.-B. Limb, U. Chowdhury, P. Li, J.-H. Ryou, D. Yoo, D. Zakharov, Z. Liliental-Weber and R. D. Dupuis

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461598

    33. Growth studies of GaN and alloys on LiAlO2 by MOVPE (pages 2161–2165)

      Y. Dikme, P. van Gemmern, B. Chai, D. Hill, A. Szymakowski, H. Kalisch, M. Heuken and R. H. Jansen

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461414

    34. Molecular beam epitaxy

      High temperature limitations for GaN growth by RF-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, and excess Ga-overpressure (pages 2174–2177)

      B. L. VanMil, Huicheng Guo, L. J. Holbert, Kyoungnae Lee, C. H. Swartz, Ting Liu, D. Korakakis and T. H. Myers

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461573

    35. Quantification of Ga surface coverages and their desorption kinetics on GaN (0001) and (000-1) surfaces (pages 2178–2182)

      G. Koblmüller, J. Brown, R. Averbeck, H. Riechert, P. Pongratz, P. M. Petroff and J. S. Speck

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461335

    36. Effects of hydrogen during molecular beam epitaxy of GaN (pages 2183–2186)

      Y. Dong and R. M. Feenstra

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461464

    37. Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy (pages 2187–2190)

      S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461569

    38. Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy (pages 2195–2198)

      Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart and J-P. Faurie

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461469

    39. Polytype control and properties of AlN on silicon (pages 2199–2203)

      V. Cimalla, V. Lebedev, U. Kaiser, R. Goldhahn, Ch. Foerster, J. Pezoldt and O. Ambacher

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461579

    40. Thermal activation of beryllium-related photoluminescence by annealing of GaN grown by molecular beam epitaxy (pages 2204–2207)

      Kyoungnae Lee, B. L. VanMil, Ming Luo, Lijun Wang, N. C. Giles and T. H. Myers

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461574

    41. Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth (pages 2212–2215)

      D.F. Storm, D.S. Katzer, S.C. Binari, B.V. Shanabrook, Lin Zhou and David J. Smith

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461432

    42. Phase transition by Mg doping of N-face polarity GaN (pages 2216–2219)

      E. Sarigiannidou, E. Monroy, M. Hermann, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin and M. Eickhoff

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461429

    43. Growth and silicon doping of AlGaN films in the entire alloy composition by molecular beam epitaxy (pages 2220–2223)

      T. Xu, C. Thomidis, I. Friel and T. D. Moustakas

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461595

    44. Influence of lattice-matching on structural properties of GaInNAs epitaxial films grown on GaAs (pages 2224–2227)

      Takeaki Sakurai, Naoki Matsumoto, Yoshitaka Okada, Seinosuke Onari and Katsuhiro Akimoto

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461460

    45. Growth of a-plane AlN on r-plane sapphire by plasma source molecular beam epitaxy (pages 2228–2231)

      Yuri Danylyuk, Soma Perooly, Md. Rahman and Gregory Auner

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461601

    46. Polycrystalline InGaN grown by MBE on fused silica glass (pages 2236–2239)

      C. E. Kendrick, P. A. Anderson, R. J. Kinsey, V. J. Kennedy, A. Markwitz, A. Asadov, W. Gao, R. J. Reeves and S. M. Durbin

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461379

    47. Indium nitride

    48. Electron accumulation at InN/AlN and InN/GaN interfaces (pages 2246–2249)

      T. D. Veal, L. F. J. Piper, I. Mahboob, Hai Lu, W. J. Schaff and C. F. McConville

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461418

    49. Demonstration of nearly non-degenerate electron conduction in InN grown by molecular beam epitaxy (pages 2250–2253)

      Craig H. Swartz, Randy P. Tomkins, Thomas H. Myers, Hai Lu and William J. Schaff

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461333

    50. Surface conductivity of epitaxial InN (pages 2254–2257)

      V. Cimalla, G. Ecke, M. Niebelschütz, O. Ambacher, R. Goldhahn, H. Lu and W. J. Schaff

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461448

    51. InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE (pages 2258–2262)

      Song-Bek Che, Wataru Terashima, Takayuki Ohkubo, Masayoshi Yoshitani, Naoki Hashimoto, Kouichirou Akasaka, Yoshihiro Ishitani and Akihiko Yoshikawa

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461437

    52. Non-stoichiometry and non-homogeneity in InN (pages 2263–2266)

      K. Scott, A. Butcher, Marie Wintrebert-Fouquet, Patrick P.-T. Chen, Kathryn E. Prince, Heiko Timmers, Santosh K. Shrestha, Tatiana V. Shubina, Sergey V. Ivanov, Richard Wuhrer, Matthew R. Phillips and Bo Monemar

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461387

    53. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy (pages 2267–2270)

      Hiroyuki Yaguchi, Yoshihiro Kitamura, Kenji Nishida, Yohei Iwahashi, Yasuto Hijikata and Sadafumi Yoshida

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461386

    54. Optimum carrier density for the occurrence of superconductivity of InN (pages 2271–2275)

      T. Inushima, N. Kato, Y. Sasaki, T. Takenobu and M. Motokawa

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461388

    55. Bandgap energy of InN and its temperature dependence (pages 2276–2280)

      Y. Ishitani, H. Masuyama, W. Terashima, M. Yoshitani, N. Hashimoto, S.B. Che and A. Yoshikawa

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461433

    56. MOVPE InN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) (pages 2281–2284)

      A. Yamamoto, T. Kobayashi, T. Yamauchi, M. Sasase, A. Hashimoto and Y. Ito

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461421

    57. MOVPE growth of InN under high NH3 decomposition rate conditions (pages 2285–2288)

      A. Yamamoto, K. Kasashima, K. Sugita, M. Yasuda, C. Kuroda and A. Hashimoto

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461409

    58. Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates (pages 2289–2292)

      J. Grandal, M.A. Sánchez-García, F. Calle and E. Calleja

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461571

    59. Revisiting electrochromism in InN (pages 2293–2296)

      K. Scott, A. Butcher, Marie Wintrebert-Fouquet, Patrick P.-T. Chen, Richard Wuhrer and Matthew R. Phillips

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461560

    60. Non-equilibrium carrier transport in a high-quality InN film grown on GaN (pages 2297–2300)

      L. W. Liang, K.T. Tsen, C. Poweleit, D.K. Ferry, Shaw-Wei D. Tsen, Hai Lu and William J. Schaff

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461319

    61. InN{0001} polarity by ion scattering spectroscopy (pages 2301–2304)

      M. Walker, T. D. Veal, Hai Lu, W. J. Schaff and C. F. McConville

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461290

    62. Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD (pages 2309–2315)

      B. Maleyre, S. Ruffenach, O. Briot, B. Gil and A. van der Lee

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461413

    63. Growth of polycrystalline InN on silica glass by ECR-MBE (pages 2316–2319)

      T. Araki, T. Ueno, H. Naoi and Y. Nanishi

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461583

    64. (111) and (100) YSZ as substrates for indium nitride growth (pages 2320–2323)

      P. A. Anderson, C. E. Kendrick, R. J. Kinsey, A. Asadov, W. Gao, R. J. Reeves and S. M. Durbin

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461336

    65. Detection of non-equilibrium longitudinal optical phonons in InN and its consequences (pages 2324–2327)

      W. Liang, K. T. Tsen, C. Poweleit, D. K. Ferry, Shaw-Wei D. Tsen, Hai Lu and William J. Schaff

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461309

    66. Heterostructures and quantum structures

      Raman study of strain in GaN/AlN quantum dot multilayered structures (pages 2328–2331)

      A. Cros, N. Garro, J. M. Llorens, A. García-Cristóbal, A. Cantarero, N. Gogneau, E. Monroy and B. Daudin

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461308

    67. Defect density dependence of carrier dynamics in AlGaN multiple quantum wells grown on GaN substrates and templates (pages 2332–2336)

      G. A. Garrett, C. J. Collins, A. V. Sampath, H. Shen, M. Wraback, S. F. LeBoeuf, J. Flynn and G. Brandes

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461600

    68. Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells (pages 2337–2340)

      P. P. Paskov, J. P. Bergman, B. Monemar, S. Keller, S. P. DenBaars and U. K. Mishra

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461568

    69. GaN quantum dots grown on non-polar a-plane SiC by plasma-assisted molecular beam epitaxy (pages 2341–2344)

      S. Founta, F. Rol, T. Andreev, B. Gayral, E. Bellet-Amalric, C. Moisson, H. Mariette and B. Daudin

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461360

    70. Photoluminescence of GaN/AlN superlattices grown by MOCVD (pages 2345–2348)

      P. P. Paskov, J. P. Bergman, V. Darakchieva, T. Paskova, B. Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461367

    71. Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet (pages 2349–2352)

      T. Narita, Y. Honda, M. Yamaguchi and N. Sawaki

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461558

    72. Influence of Al-preflow on MOVPE-grown GaN films analysed by X-ray reciprocal space map (pages 2353–2356)

      B. W. Seo, Y. Ishitani and A. Yoshikawa

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461476

    73. Fabrication and analysis of GaN nanorods grown by MBE (pages 2357–2360)

      N. A. Sanford, L. H. Robins, M. H. Gray, Y.-S. Kang, J. E. Van Nostrand, C. Stutz, R. Cortez, A. V. Davydov, A. Shapiro, I. Levin and A. Roshko

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461602

    74. A nanocluster route to zero- and one-dimensional quantum structures by MOCVD (pages 2361–2364)

      M. Gherasimova, J. Su, G. Cui, Z.-Y. Ren, S.-R. Jeon, J. Han, Y. He, Y.-K. Song, A. V. Nurmikko, D. Ciuparu and L. Pfefferle

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461572

    75. Carrier confinement in AlGaN non-abrupt heterostructured nanowires (pages 2365–2368)

      E. W. S. Caetano, V. N. Freire and G. A. Farias

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461321

    76. Formation of AlN and GaN nanocolumns on Si(111) using molecular beam epitaxy with ammonia as a nitrogen source (pages 2369–2372)

      K. A. Bertness, A. Roshko, N. A. Sanford, J. B. Schlager and M. H. Gray

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461523

    77. Rare-earth doped GaN and InGaN quantum dots grown by plasma assisted MBE (pages 2373–2376)

      Y. Hori, T. Andreev, X. Biquard, E. Monroy, D. Jalabert, Le Si Dang, M. Tanaka, O. Oda and B. Daudin

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461363

    78. Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition (pages 2377–2380)

      Z. C. Feng, W. Liu, S. J. Chua, J. H. Chen, C. C. Yang, W. Lu and W. E. Collins

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461496

    79. Size and shape of In rich clusters and InGaN QWs at the nanometer scale (pages 2381–2384)

      P. Ruterana, P. Singh, S. Kret, H. K. Cho, H. J. Lee, E. K. Suh, G. Jurczak, G. Maciejewski and P. Dluzewski

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461463

    80. GaN/AlN super-lattice structures on vicinal sapphire (0001) substrates grown by rf-MBE (pages 2385–2388)

      X.Q. Shen, T. Yamamoto, S. Nakashima, H. Matsuhata and H. Okumura

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461303

    81. Optical phonons in hexagonal GaN/AlN and GaN/AlGaN superlattices (pages 2389–2393)

      V. Yu. Davydov, A. N. Smirnov, M. B. Smirnov, S. V. Karpov, M. A. Yagovkina, A. I. Besulkin and W. V. Lundin

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461454

    82. Heterojunctions between group-III nitride short-period superlattices (pages 2394–2398)

      K. A. Bulashevich and S. Yu. Karpov

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461480

    83. Defects, structural properties, and electrical characterization

      69,71Ga and 14N high-field NMR of gallium nitride films (pages 2399–2402)

      James P. Yesinowski

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461334

    84. Magnetic properties of Mn-doped GaN and p-i-n junctions (pages 2403–2406)

      M.L. Reed, M.J. Reed, M.O. Luen, E.A. Berkman, F.E. Arkun, S.M. Bedair, J.M. Zavada and N. A. El-Masry

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461517

    85. Defects, strucural properties, and electrical characterization

    86. A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si (pages 2411–2414)

      A. Armstrong, A. Arehart, D. Green, J. S. Speck, U. K. Mishra and S. A. Ringel

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461594

    87. P-type doping in GaN through Be implantation (pages 2415–2419)

      Z. C. Feng, Y. J. Sun, L. S. Tan, S. J. Chua, J. W. Yu, C. C. Yang, W. Lu and W. E. Collins

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461458

    88. The influence of interdiffusion on strain energy in the GaN–sapphire system (pages 2420–2423)

      Sang Won Kang, Hyun Jong Park, Taewoong Kim, Todd Dann, Olga Kryliouk and Tim Anderson

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461562

    89. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs (pages 2424–2428)

      Z. Bougrioua, M. Azize, A. Jimenez, A.-F. Braña, P. Lorenzini, B. Beaumont, E. Muñoz and P. Gibart

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461588

    90. Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films (pages 2433–2436)

      Seong-Eun Park, Joseph J. Kopanski, Youn-Seon Kang and Lawrence H. Robins

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461332

    91. Synthesis, solid-state NMR, and magnetic characterization of h-GaN containing magnetic ions (pages 2437–2440)

      A. P. Purdy, J. P. Yesinowski and A. T. Hanbicki

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461495

    92. Comparison of GaMnN epilayers prepared by ion implantation and metalorganic chemical vapor deposition (pages 2441–2445)

      M. H. Kane, A. Asghar, A. M. Payne, C. R. Vestal, Z. J. Zhang, M. Strassburg, J. Senawirante, N. Dietz, C. J. Summers and I. T. Ferguson

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461482

    93. Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy (pages 2446–2449)

      H. J. Park, C. Park, S. Yeo, S.W. Kang, M. Mastro, O. Kryliouk and T. J. Anderson

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461513

    94. Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN (pages 2450–2453)

      A. Colder, T. Wojtowicz, P. Marie, P. Ruterana, V. Matias, M. Mamor, A. Vantomme, S. Eimer and L. Méchin

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461504

    95. Deep levels in KOH etched and MOCVD regrown GaN p-n junctions (pages 2454–2457)

      D. Johnstone, S. Dogan, Y. T. Moon, Y. Fu, J. Xu, F. Yun, J. Leach and H. Morkoç

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461507

    96. Structural and magnetic properties of Co doped GaN (pages 2458–2462)

      J. Sawahata, H. Bang, M. Takiguchi, J. Seo, H. Yanagihara, E. Kita and K. Akimoto

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461465

    97. Investigation of molecular co-doping for low ionization energy p-type centers in GaN (pages 2463–2467)

      Adam M. Payne, David Nicol, Hun Kang, My Tran, Dhairya Mehta, Stephen Moore and Ian Ferguson

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461493

    98. Pressure-induced phase transitions and polytypic structures in III-Nitrides (pages 2468–2471)

      C. C. Silva, H. W. Leite Alves, L. M. R. Scolfaro and J. R. Leite

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461381

    99. Radiation damage annealing (thermal and laser) in Mg implanted GaN (pages 2472–2475)

      Sean Whelan, Michael J. Kelly, John Yan and Guglielmo Fortunato

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461316

    100. Properties and annealing stability of Fe doped semi-insulating GaN structures (pages 2476–2479)

      A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. A. Shlensky, Kris McGuire, E. Harley, L. E. McNeil, Rohit Khanna, S. J. Pearton and J. M. Zavada

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461267

    101. Changes induced in electrical properties and deep level spectra of p-AlGaN films by treatment in hydrogen plasma and by proton implantation (pages 2480–2483)

      A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Rohit Khanna and S. J. Pearton

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461270

    102. Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE (pages 2484–2487)

      T. Wojtowicz, P. Ruterana, D. S. Lee and A. J. Steckl

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461500

    103. Cr concentration dependence of magnetic and electrical properties of Cr-doped GaN films on Si (111) by MOMBE (pages 2488–2491)

      K. Yamaguchi, H. Tomioka, T. Yui, T. Suemasu, K. Ando, R. Yoshizaki and F. Hasegawa

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461403

    104. Atomic structure and energy of threading screw dislocations in wurtzite GaN (pages 2492–2495)

      I. Belabbas, M. Akli Belkhir, Y. H. Lee, A. Béré, P. Ruterana, J. Chen and G. Nouet

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461368

    105. Atomistic modelling of point defects in [0001] tilt boundaries in GaN (pages 2496–2499)

      A. Béré, J. Chen, G. Nouet, P. Ruterana and J. Koulidiati

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461353

    106. Disconnections and inversion domain formation in GaN/AlN heteroepitaxy on (111) silicon (pages 2500–2503)

      G. P. Dimitrakopulos, A. M. Sanchez, Ph. Komninou, P. Ruterana, G. Nouet, Th. Kehagias and Th. Karakostas

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461392

    107. Ab initio studies of indium separated phases in AlGaInN quaternary alloys (pages 2508–2511)

      M. Marques, L. K. Teles, L. M. R. Scolfaro, J. R. Leite and L. G. Ferreira

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461516

    108. Dispersion relation of the optical phonon frequencies in AlN/GaN superlattices (pages 2512–2515)

      S.K. Medeiros, E. L. Albuquerque, G.A. Farias, M.S. Vasconcelos and D.H.A.L. Anselmo

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461273

    109. Crystal structure, electronic structure and magnetism of transition metal nitrides (pages 2516–2519)

      M. S. Miao, Pavel Lukashev, Aditi Herwadkar and Walter R. L. Lambrecht

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461318

    110. Electrical and optical properties of p-GaN films implanted with transition metal impurities (pages 2520–2524)

      A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, Rohit Khanna and S.J. Pearton

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461271

    111. LCAO calculation of neutral defects in GaN (pages 2525–2528)

      A. Gulans, R. A. Evarestov, I. Tale and C.C. Yang

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461445

    112. Contacts and processing

      Al-free Ti/Mo/Ta/Au-based n-type ohmic contact with a smooth surface for AlGaN/GaN power HEMTs (pages 2529–2532)

      Toshihiro Ohki, Masahito Kanamura, Tsuyoshi Takahashi, Toshihide Kikkawa, Kazukiyo Joshin and Naoki Hara

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461554

    113. Highly transparent ZnO spreading layer for GaN based LED (pages 2533–2535)

      Jae-Hong Lim, Dae-Kue Hwang, Min-Ki Kwon, Il-Kyu Park, Seok-in Na and Seong-Ju Park

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461438

    114. Realization of improved metallization-Ti/Al/Ti/W/Au ohmic contacts to n-GaN for high temperature application (pages 2536–2539)

      A. Motayed, A.V. Davydov, W. J. Boettinger, D. Josell, A.J. Shapiro , I. Levin, T. Zheleva and G. L. Harris

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461604

    115. Dry etching of AlxGa1–xN/GaN by CCl2F2 chemistry for device isolation (pages 2544–2547)

      W.S. Lau, B.P. Singh, Joy B.H. Tan, S. Gunawan, Y.Y. Jiang, Richard Thet Wynn, Vanissa S. W. Lim and A.D. Trigg

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461324

    116. WSiN cap for Ohmic contacts to n-GaN with better morphology (pages 2548–2550)

      W. S. Lau, B. P. Singh, S. Gunawan, Joy B. H. Tan, Y. Y. Jiang, Richard Thet Wynn, Vanissa S. W. Lim and A. D. Trigg

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461323

    117. Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN (pages 2551–2554)

      A.V. Davydov, A. Motayed, W.J. Boettinger, R.S. Gates, Q. Z. Xue, H. C. Lee and Y. K. Yoo

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461605

    118. Pt/GaN Schottky diodes for harsh environment NO sensing applications (pages 2555–2558)

      V. Tilak, K. Matocha and P. Sandvik

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461587

    119. Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon (pages 2559–2563)

      Sung-Jong Park, Heon-Bok Lee, Wang Lian Shan, Soo-Jin Chua, Jung-Hee Lee and Sung-Ho Hahm

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461393

    120. Transport properties

      High-field electron transport in AlGaN/GaN heterostructures (pages 2564–2568)

      J. M. Barker, D. K. Ferry, S. M. Goodnick, D. D. Koleske, A. Allerman and R. J. Shul

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461384

    121. High-speed and high-frequency electron effects in nitride semiconductors for terahertz applications (pages 2569–2572)

      K. W. Kim, V. N. Sokolov, V. A. Kochelap, V. V. Korotyeyev and D. L. Woolard

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461372

    122. Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo (pages 2573–2576)

      S. Yamakawa, S. M. Goodnick, J. Branlard and M. Saraniti

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461525

    123. Effect of 60Co gamma-irradiation on two-dimensional electron gas transport and device characteristics of AlGaN/GaN HEMTs (pages 2581–2584)

      G. A. Umana-Membreno, J. M. Dell, G. Parish, B. D. Nener, L. Faraone, R. Ventury and U. K. Mishra

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461519

    124. Hot-electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs (pages 2585–2588)

      A. Matulionis, J. Liberis, M. Ramonas, I. Matulionienė, L. F. Eastman, A. Vertiatchikh, X. Chen and Y.-J. Sun

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461374

    125. Electronic devices

      High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors (pages 2589–2592)

      K. Kumakura, Y. Yamauchi and T. Makimoto

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461395

    126. 573 K operation AlGaN/GaN HFET with enhancement operation on Si substrate (pages 2593–2597)

      S. Yoshida, J. Li and N. Ikeda

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461302

    127. MBE growth and device characteristics of InAlN/GaN HFETs (pages 2598–2601)

      M. Higashiwaki and T. Matsui

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461389

    128. AlGaN/GaN field effect Schottky barrier diode (FESBD) (pages 2602–2606)

      S. Yoshida, J. Li, N. Ikeda and K. Hataya

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461300

    129. Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates (pages 2607–2610)

      M. Fieger, Y. Dikme, F. Jessen, H. Kalisch, A. Noculak, A. Szymakowski, P. v. Gemmern, B. Faure, C. Richtarch, F. Letertre, M. Heuken and R. H. Jansen

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461451

    130. Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors (pages 2611–2614)

      M. Marso, J. Bernát, P. Javorka, A. Fox and P. Kordoš

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461325

    131. Phase noise study of AlGaN/GaN HEMT X-band oscillator (pages 2615–2618)

      S. V. Danylyuk, S. A. Vitusevich, V. Kaper, V. Tilak, N. Klein, L. F. Eastman and J. R. Shealy

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461457

    132. Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs (pages 2619–2622)

      D. Gregušová, J. Bernát, M. Držík, M. Marso, J. Novák, F. Uherek and P. Kordoš

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461350

    133. AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers (pages 2623–2626)

      K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa and T. Egawa

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461347

    134. Impact of native oxides beneath the gate contact of AlGaN/GaN HFET devices (pages 2627–2630)

      D. Mistele, O. Katz, A. Horn, G. Bahir and J. Salzman

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461380

    135. AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier (pages 2631–2634)

      R. Schwindt, V. Kumar, O. Aktas, J.-W. Lee and I. Adesida

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461544

    136. Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer (pages 2639–2642)

      S. Müller, K. Köhler, R. Kiefer, R. Quay, M. Baeumler and L. Kirste

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461288

    137. High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current (pages 2647–2650)

      Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461416

    138. Performance stability of high-power III-nitride metal-oxide semiconductor-heterostructure field-effect transistors (pages 2651–2654)

      S. Saygi, H. Fatima, X. He, S. Rai, A. Koudymov, V. Adivarahan, J. Yang, G. Simin and M. Asif Khan

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461520

    139. Substrate removal of AlGaN/GaN HEMTs using laser lift-off (pages 2655–2658)

      J. Das, W. Ruythooren, R. Vandersmissen, J. Derluyn, M. Germain and G. Borghs

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461355

    140. Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth (pages 2663–2667)

      Yugang Zhou, Rongming Chu, Jie Liu, Kevin J. Chen and Kei May Lau

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461623

    141. GaN enhancement mode metal-oxide semiconductor field effect transistors (pages 2668–2671)

      Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, C.-C. Pan, G.-T. Chen and J.-I. Chyi

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461280

    142. Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors (pages 2672–2675)

      B. S. Kang, R. Mehandru, S. Kim, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, K. H. Baik, B. P. Gila, C. R. Abernathy and S. J. Pearton

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461268

    143. Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs (pages 2676–2679)

      J. Bernát, R. Pierobon, M. Marso, J. Flynn, G. Brandes, G. Meneghesso, E. Zanoni and P. Kordoš

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461304

    144. Wet etching for improved GaN-based HBT performance (pages 2680–2683)

      Jennifer A. Bardwell, Soufien Haffouz, Eugene M. Hsu, Haipeng Tang, Peter Chyurlia and James B. Webb

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461358

    145. AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing (pages 2684–2687)

      B. S. Kang, S. Kim, J. Kim, R. Mehandru, F. Ren, K. Baik, S. J. Pearton, B. P. Gila, C. R. Abernathy, C.-C. Pan, G.-T. Chen, J.-I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida and S. N. G. Chu

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461269

    146. Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE (pages 2688–2691)

      S. B. Aleksandrov, D. A. Baranov, V. P. Chaly, D. M. Krasovitsky, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorelsky, I. A. Sokolov, M. A. Sokolov, L. E. Velikovsky, N. I. Podolskaya, K. A. Bulashevich and S. Yu. Karpov

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461394

    147. Capacitance analysis of Al0.25Ga0.75N/GaN heterostructure barrier varactor diodes (pages 2692–2695)

      N. Tanuma, S. Yokokura, T. Matsui and M. Tacano

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461408

    148. Optical properties

      Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr;0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique (pages 2700–2703)

      S. F. Chichibu, T. Koida, M. D. Craven, B. A. Haskell, T. Onuma, T. Sota, J. S. Speck, S. P. DenBaars and S. Nakamura

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461423

    149. Polarization anisotropy and filtering for M-plane GaN films (pages 2704–2707)

      P. Misra, Y. J. Sun, O. Brandt and H. T. Grahn

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461479

    150. Changes in excess carrier recombination dynamics caused by aging of GaN-based blue laser diodes (pages 2708–2711)

      C. Netzel, S. Heppel, S. Miller, M. Furitsch, A. Leber, A. Lell, V. Härle and A. Hangleiter

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461584

    151. Specific emission characteristics of high-quantum-efficiency GaInN/GaN heterostructures (pages 2712–2715)

      C. Netzel, F. Hitzel, U. Rossow and A. Hangleiter

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461475

    152. Origin of unstable photoluminescence in GaN: metastable defects or surface states? (pages 2716–2719)

      M. A. Reshchikov, Y. T. Moon and H. Morkoç

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461371

    153. Electron mobility and transfer characteristics in AlGaN/GaN HEMTs (pages 2720–2723)

      Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali and J. Massies

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461470

    154. Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique (pages 2724–2727)

      A. L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, G. P. Yablonskii, R. Aleksiejūnas, K. Jarašiūnas, F. Letertre, B. Faure, B. Schineller, A. Alam, M. Heuken, Y. Dikme, H. Kalisch and R. H. Jansen

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461449

    155. Near-field photoluminescence study in violet light emitting InGaN single quantum well structures (pages 2728–2731)

      Akio Kaneta, Daisuke Yamada, Giichi Marutsuki, Yukio Narukawa, Takashi Mukai and Yoichi Kawakami

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461580

    156. Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates (pages 2732–2735)

      C. Q. Chen, V. Adivarahan, M. Shatalov, M. E. Gaevski, E. Kuokstis, J. W. Yang, H. P. Maruska, Z. Gong, M. Asif Khan, R. Liu, A. Bell and F. A. Ponce

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461547

    157. Temperature dependence of 2DEG and excitonic optical transitions in AlGaN/GaN heterostructures on SiC (pages 2736–2739)

      C. W. Litton, D. C. Reynolds, J. E. Hoelscher, T. C. Collins, R. Fitch, G. D. Via, J. Gillespie, A. Crespo, T. J. Jenkins, R. Worley and A. Saxler

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461542

    158. Optical properties of sub-100 nm diameter nanoposts with embedded InGaN quantum well heterostructures (pages 2740–2743)

      Yiping He, Lu Chen, Y.-K. Song, A.V. Nurmikko, S.-R. Jeon, Z. Ren, M. Gherasimova and J. Han

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461592

    159. Microphotoluminescence of strongly localized states in InGaN/GaN layers – emission of quantum dots? (pages 2744–2747)

      Henning Lohmeyer, Kathrin Sebald, Jürgen Gutowski, Sven Einfeldt, Claudia Roder and Detlef Hommel

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461577

    160. All-optical modulation using intersubband transitions at 1.55 μm in GaN/AlN multiple quantum well (pages 2748–2752)

      S. Matsui, Y. Ishii, T. Morita, P. Holmström, H. Sekiguchi, A. Kikuchi and Katsumi Kishino

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461589

    161. Carrier localization effect in polarized InGaN multiple quantum wells (pages 2753–2756)

      A. Žukauskas, K. Kazlauskas, G. Tamulaitis, J. Mickevičius, S. Juršėnas, G. Kurilčik, S. Miasojedovas, M. Springis, I. Tale, Yung-Chen Cheng, Hsiang-Chen Wang, Chi-Feng Huang and C. C. Yang

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461428

    162. Effect of potential fluctuations on photoluminescence in Mg-doped GaN (pages 2761–2764)

      M. A. Reshchikov, J. Xie, L. He, X. Gu, Y. T. Moon, Y. Fu and H. Morkoç

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461370

    163. Cathodoluminescence and its temperature dependence in Tm-doped AlxGa1–xN thin films (pages 2765–2769)

      D. S. Lee, A. J. Steckl, P. D. Rack and J. M. Fitz-Gerald

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461612

    164. Luminescence of highly excited nonpolar a-plane GaN epilayers (pages 2770–2773)

      S. Juršėnas, E. Kuokštis, S. Miasojedovas, G. Kurilčik, A. Žukauskas, C. Q. Chen, J. W. Yang, V. Adivarahan, M. Asif Khan and M. S. Shur

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461345

    165. Raman, photoluminescence and absorption studies on high quality AlN single crystals (pages 2774–2778)

      J. Senawiratne, M. Strassburg, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser and Z. Sitar

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461509

    166. Photoluminescence study of MBE grown InGaN with intentional indium segregation (pages 2779–2782)

      Maurice C. Cheung, Gon Namkoong, Fei Chen, Madalina Furis, Haridas E. Pudavar, Alexander N. Cartwright and W. Alan Doolittle

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461498

    167. Refractive index and birefringence of InxGa1–xN films grown by MOCVD (pages 2783–2786)

      N. A. Sanford, A. Munkholm, M. R. Krames, A. Shapiro, I. Levin, A. V. Davydov, S. Sayan, L. S. Wielunski and T. E. Madey

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461606

    168. Emission dynamics of red emitting InGaN/GaN single quantum wells (pages 2787–2790)

      Fei Chen, A. N. Cartwright, C. Liu and I. M. Watson

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461499

    169. Optical study of AlGaN/GaN based HEMT structures (pages 2791–2795)

      Tomasz J. Ochalski, Andrzej Grzegorczyk, Mariusz Rudzinski, Poul K. Larsen, Emil Kowalczyk, Per Olof Holtz, Peder Bergman and Plamen P. Paskov

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461400

    170. Spectroscopic studies of the infrared emission from Tm doped AlxGa1–xN thin films (pages 2796–2799)

      E. Nyein, U. Hömmerich, D. S. Lee, A. J. Steckl and J. M. Zavada

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461467

    171. Photoreflectance study of the electronic structure of Si-doped InyGa1−yAs1−xNx films with x < 0.012 (pages 2800–2804)

      Y.-S. Kang, L. H. Robins, A. G. Birdwell, A. J. Shapiro, W. R. Thurber, M. D. Vaudin, M. M. E. Fahmi, D. Bryson and S. N. Mohammad

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461492

    172. Photoluminescence properties of Eu-implanted AlxGa1–xN (0 ≤ x ≤ 1) (pages 2805–2808)

      Tetsuya Fujiwara, Akihiro Wakahara, Yasuo Nakanishi, Akira Yoshida, Takeshi Oshima and Toshihiro Kamiya

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461431

    173. Photoluminescence temperature behavior and Monte Carlo simulation of exciton hopping in InGaN multiple quantum wells (pages 2809–2812)

      K. Kazlauskas, G. Tamulatis, P. Pobedinskas, A. Žukauskas, Chi-Feng Huang, Yung-Chen Cheng, Hsiang-Chen Wang and C. C. Yang

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461338

    174. Transient photovoltage in GaN (pages 2813–2816)

      M. A. Reshchikov, S. Sabuktagin, D. K. Johnstone, A. A. Baski and H. Morkoç

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461436

    175. Electronic properties of cubic quaternary AlInGaN alloys (pages 2817–2820)

      H. Hernández-Cocoletzi, J. Arriaga and D. A. Contreras-Solorio

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461530

    176. Optical devices

      350.9 nm UV laser diode grown on sapphire substrate (pages 2828–2831)

      M. Iwaya, K. Iida, T. Kawashima, A. Miyazaki, H. Kasugai, S. Mishima, A. Honshio, Y. Miyake, S. Kamiyama, H. Amano and I. Akasaki

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461399

    177. White light generation using 280 nm light emitting diode pumps (pages 2832–2835)

      M. Shatalov, S. Wu, V. Adivarahan, W.H. Sun, A. Chitnis, J. Yang, Yu. Bilenko, R. Gaska and M. Asif Khan

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461524

    178. Cone-shaped surface GaN-based light-emitting diodes (pages 2836–2840)

      T. Fujii, A. David, Y. Gao, M. Iza, S. P. DenBaars, E. L. Hu, C. Weisbuch and S. Nakamura

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461494

    179. Surface plasmon enhanced super bright InGaN light emitter (pages 2841–2844)

      Koichi Okamoto, Isamu Niki, Alexander Shvartser, Yukio Narukawa, Takashi Mukai and Axel Scherer

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461540

    180. Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching (pages 2845–2848)

      E. D. Haberer, C. Meier, R. Sharma, A. R. Stonas, S. P. DenBaars, S. Nakamura and E. L. Hu

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461505

    181. Violet-emitting diode lasers on low defect density GaN templates (pages 2849–2853)

      F. Sommer, F. Vollrath, M. Kunzer, W. Pletschen, S. Müller, K. Köhler, P. Schlotter, J. Wagner, A. Weimar and V. Härle

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461453

    182. Effects of the artificial Ga-nitride/air periodic nanostructures on current injected GaN-based light emitters (pages 2858–2861)

      Bei Zhang, ZhenSheng Zhang, Jun Xu, Qian Ren, ChunLai Jin, ZhiJian Yang, Qi Wang, WeiHua Chen, XiaoDong Hu, TongJun Yu, ZhiXin Qin, GuoYi Zhang, DaPeng Yu and BaoPing Zhang

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461376

    183. Short term instabilities of InGaN GaN light emitting diodes by capacitance–voltage characteristics and junction spectroscopy (pages 2862–2865)

      A. Castaldini, A. Cavallini, L. Rigutti, M. Meneghini, S. Levada, G. Meneghesso, E. Zanoni, V. Härle, T. Zahner and U. Zehnder

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461619

    184. Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity (pages 2871–2873)

      C. Wetzel, P. Li, T. Detchprohm and J. S. Nelson

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssc.200461391

    185. Simulation and fabrication of highly efficient InGaN-based LEDs with corrugated interface substrate (pages 2874–2877)

      Jaehee Cho, Hyunsoo Kim, Hyungkun Kim, Jeong Wook Lee, Sukho Yoon, Cheolsoo Sone, Yongjo Park and Euijoon Yoon

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461337

    186. UV LED arrays for spectroscopic fingerprinting of airborne biological particles (pages 2878–2881)

      K. Davitt, Y.-K. Song, A. V. Nurmikko, S.-R. Jeon, M. Gherasimova, J. Han, Y.-L. Pan and R. K. Chang

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461591

    187. InGaN/GaN LEDs optical output efficiency enhancement based on AFM surface morphology studies of the constituent layers (pages 2882–2886)

      D.I. Florescu, J.C. Ramer, V.N. Merai, A. Parekh, D. Lu, D.S. Lee and E.A. Armour

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461357

    188. Surface roughness induced phase-separation in InGaN and LED applications (pages 2887–2890)

      Il-Kyu Park, Yoon-Seok Kim, Min-Ki Kwon, Sung-Ho Baek, Ja-Yeon Kim, Seok-In Na and Seong-Ju Park

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461440

    189. Gain and photoluminescence spectroscopy in violet and ultraviolet InAlGaN laser structures (pages 2891–2894)

      Oliver Schmidt, Oliver Wolst, Michael Kneissl, Peter Kiesel, Zhihong H. Yang, Mark Teepe and Noble M. Johnson

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461362

    190. Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics (pages 2895–2898)

      Teruhisa Kotani, Yoshitaka Hatada, Mitsuru Funato, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami and Shigeo Fujita

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461543

    191. High-efficiency 350 nm-band quaternary InAlGaN-based UV-LED on GaN/sapphire template (pages 2899–2902)

      Hideki Hirayama, Takashi Kyono, Katsushi Akita, Takao Nakamura and Koji Ishibashi

      Version of Record online: 30 MAR 2005 | DOI: 10.1002/pssc.200461446

    192. Nitride micro-display with integrated micro-lenses (pages 2903–2906)

      H. W. Choi, E. Gu, J. M. Girkin and M. D. Dawson

      Version of Record online: 8 MAR 2005 | DOI: 10.1002/pssc.200461340

    193. LED flip-chip assembly with electroplated AuSn alloy (pages 2907–2911)

      P. P. Maaskant, M. Akhter, N. Cordero, D. P. Casey, J. F. Rohan, B. J. Roycroft and B. M. Corbett

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461566

    194. Significant improvements of quantum efficiency of quaternary InAlGaN UV-LEDs on GaN substrates (pages 2912–2915)

      Takashi Kyono, Hideki Hirayama, Katsushi Akita, Takao Nakamura and Koji Ishibashi

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461406

    195. Surface texturing of p-GaN layer for efficient GaN LED by maskless selective etching (pages 2916–2919)

      Seok-In Na, Dae-Seob Han, Seok-Soon Kim, Jae-Hong Lim, Ja-Yeon Kim and Seong-Ju Park

      Version of Record online: 11 APR 2005 | DOI: 10.1002/pssc.200461471

    196. Brightness enhancement of ITO/GaN LEDs by self-aligned micro-net structures (pages 2920–2923)

      Kow-Ming Chang, Jiunn-Yi Chu, Chao-Chen Cheng and Chen-Fu Chu

      Version of Record online: 22 MAR 2005 | DOI: 10.1002/pssc.200461550

    197. Integration of CdSe quantum dots with GaN optoelectronic materials (pages 2924–2927)

      J. G. Pagan, M. T. Ahrens, E. B. Stokes, B. A. Martin and M.-A. Hasan

      Version of Record online: 15 MAR 2005 | DOI: 10.1002/pssc.200461508

    198. Modelling study of MQW LED operation (pages 2928–2931)

      V. F. Mymrin, K. A. Bulashevich, N. I. Podolskaya, I. A. Zhmakin, S. Yu. Karpov and Yu. N. Makarov

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssc.200461289

    199. Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics [phys. stat. sol. (c) 2, No. 7, 2895–2898 (2005)] (page 2932)

      Teruhisa Kotani, Yoshitaka Hatada, Mitsuru Funato, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami and Shigeo Fujita

      Version of Record online: 18 APR 2005 | DOI: 10.1002/pssc.200461624

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