physica status solidi (c)

Cover image for Vol. 4 Issue 7

June 2007

Volume 4, Issue 7

Pages 2204–2858

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Preface
    4. Contributed Articles
    1. Mega-cone blue LEDs based on ZnO/GaN direct wafer bonding

      A. Murai, D. B. Thompson, H. Masui, N. Fellows, U. K. Mishra, S. Nakamura and S. P. DenBaars

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200790010

  2. Preface

    1. Top of page
    2. Cover Picture
    3. Preface
    4. Contributed Articles
    1. Preface: phys. stat. sol. (c) 4/7 (pages 2204–2208)

      Guest Editor Katsuhiro Akimoto, Guest Editor Shigefusa Chichibu and Guest Editor Takashi Suemasu

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200790011

  3. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Preface
    4. Contributed Articles
    1. Bulk/LEO/HVPE

      Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen (pages 2211–2214)

      K. Kamei, Y. Shirai, T. Tanaka, N. Okada, A. Yauchi and H. Amano

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674718

    2. Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier concentration (pages 2215–2218)

      Yuichi Oshima, Takehiro Yoshida, Takeshi Eri, Masatomo Shibata and Tomoyoshi Mishima

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674719

    3. Investigations of the growth conditions for GaN-bulk crystals grown by the sublimation technique (pages 2219–2222)

      H.-J. Rost, D. Siche, R. Müller, D. Gogova, T. Schulz, M. Albrecht and R. Fornari

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674722

    4. Initial growth stage in PVT growth of AlN on SiC substrates: Influence of Al2O3 (pages 2223–2226)

      Paul Heimann, C. Pfeiffer, M. Bickermann, B. M. Epelbaum, S. Nagata and A. Winnacker

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674723

    5. LPE growth of AlN single crystal using cold crucible under atmospheric nitrogen gas pressure (pages 2227–2230)

      T. Tanaka, N. Yashiro, Y. Shirai, K. Kamei and A. Yauchi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674727

    6. Self-separated freestanding GaN grown on patterned substrate by Hydride Vapor Phase Epitaxy (pages 2231–2235)

      Chih-Ming Lai, Wen Yu Liu, Jenq-Dar Tsay, Po Chun Liu, Yih-Der Guo, Hsin-Hsiung Huang, Yu Hsiang Chang and Jul Chin Yeh

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674733

    7. Platelets and needles: two habits of pressure grown GaN crystals (pages 2236–2239)

      M. Bockowski, I. Grzegory, B. Łucznik, G. Kamler, S. Krukowski, M. Wróblewski, P. Kwiatkowski, K. Jasik and S. Porowski

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674751

    8. Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE (pages 2240–2243)

      K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee and M. Koike

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674799

    9. Growth of high-quality 1-inch diameter AlN single crystal by sublimation method (pages 2244–2247)

      N. Mizuhara, M. Miyanaga, S. Fujiwara, H. Nakahata and T. Kawase

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674811

    10. Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy (pages 2248–2251)

      K. Tonisch, V. Cimalla, F. Niebelschütz, H. Romanus, M. Eickhoff and O. Ambacher

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674813

    11. High temperature growth of AlN film by LP-HVPE (pages 2252–2255)

      K. Tsujisawa, S. Kishino, Y. H. Liu, H. Miyake, K. Hiramatsu, T. Shibata and M. Tanaka

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674814

    12. Bending in HVPE grown GaN films: origin and reduction possibilities (pages 2256–2259)

      T. Paskova, L. Becker, T. Böttcher, D. Hommel, P. P. Paskov and B. Monemar

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674819

    13. Growth of highly resistive Ga-polar GaN by LP-MOVPE (pages 2260–2263)

      Seiji Mita, Ramón Collazo, Rafael Dalmau and Zlatko Sitar

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674837

    14. Free standing GaN layers with GaN nanorod buffer layer (pages 2268–2271)

      H. J. Lee, S. W. Lee, H. Goto, Hyo-Jong Lee, J. S. Ha, M. W. Cho and T. Yao

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674858

    15. Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE (pages 2272–2276)

      K. Balakrishnan, K. Iida, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674868

    16. Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates (pages 2277–2280)

      E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers and G. Tränkle

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674871

    17. Growth of bulk aluminum nitride crystals (pages 2281–2284)

      H. Helava, S. J. Davis, G. D. Huminic, M. G. Ramm, O. V. Avdeev, I. S. Barash, T. Yu. Chemekova, E. N. Mokhov, S. S. Nagalyuk, A. D. Roenkov, A. S. Segal, Yu. A. Vodakov and Yu. N. Makarov

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674897

    18. Novel growth and crystals

      Nitride film growth morphology using remote plasma enhanced chemical vapor deposition (pages 2285–2288)

      M. Wintrebert-Fouquet, K. S. A. Butcher, P. P.-T. Chen and R. Wuhrer

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674728

    19. Molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dot superlattices (pages 2289–2292)

      Takahiro Kawamura, Yoshihiro Kangawa and Koichi Kakimoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674784

    20. First-principle study on crystal growth of Ga and N layers on GaN substrate (pages 2293–2296)

      K. Doi, N. Maida, K. Kimura and A. Tachibana

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674798

    21. Novel growth and crystals

      Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi-layered structures (pages 2301–2305)

      Alexander Usikov, Lisa Shapovalova, Oleg Kovalenkov, Vitali Sukhoveev, Anna Volkova, Vladimir Ivantsov, Vladimir Dmitriev, Fanyu Meng, Ranjan Datta, Subhash Mahajan, Eric Readinger, Gregory Garrett, Michael Wraback and Michael Reshchikov

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674842

    22. Growth of hexagonal GaN films on the nitridated β-Ga2O3 substrates using RF-MBE (pages 2306–2309)

      S. Ohira, N. Suzuki, H. Minami, K. Takahashi, T. Araki and Y. Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674877

    23. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal (pages 2310–2313)

      N. Suzuki, S. Ohira, M. Tanaka, T. Sugawara, K. Nakajima and T. Shishido

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674884

    24. Metal catalyst enhanced growth of high quality and density GaN dots on Si(111) by implant source growth (pages 2314–2317)

      Ryan Buckmaster, Takenari Goto, Takashi Hanada, Katsushi Fujii, Takashi Kato and Takafumi Yao

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674896

    25. MBE growth of cubic AlxIn1–xN and AlxGayIn1–x–yN lattice matched to GaN (pages 2318–2321)

      D. J. As, M. Schnietz, J. Schörmann, S. Potthast, J. W. Gerlach, J. Vogt and K. Lischka

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674915

    26. Effect of substrate surface on GaN dot structure grown on Si(111) by droplet epitaxy (pages 2322–2325)

      Hiroaki Otsubo, Toshiyuki Kondo, Yo Yamamoto, Takahiro Maruyama and Shigeya Naritsuka

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674921

    27. GaAs/c-GaN/GaAs multi-layered structure fabricated by using RF-plasma source nitridation technique (pages 2326–2329)

      Y. Yamamoto, M. Mori, H. Otsubo, T. Maruyama and S. Naritsuka

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674926

    28. Heterostructures and nanostructures

    29. Subband structure and transport properties of two-dimensional electron gas in AlxGa1–xN/GaN heterostructures (pages 2334–2337)

      Xiuxun Han, Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi and Nobuhiko Sawaki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674708

    30. Vibrational modes and strain in GaN/AlN quantum dot stacks: dependence on spacer thickness (pages 2342–2345)

      J. Fresneda, A. Cros, J. M. Llorens, A. García-Cristóbal, A. Cantarero, B. Amstatt, E. Bellet-Amalric and B. Daudin

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674745

    31. Synthesis of III-nitride microcrystals using metal-EDTA complexes (pages 2346–2349)

      Y. H. Liu, S. Koide, H. Miyake, K. Hiramatsu, A. Nakamura and N. Nambu

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674747

    32. XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation (pages 2354–2357)

      N. Onojima, M. Higashiwaki, T. Matsui, T. Mimura, J. Suda and T. Kimoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674757

    33. Stimulated emission from free-standing GaN/Si micro-disk structures (pages 2358–2361)

      H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, J. H. Teng, S. Tripathy and S. J. Chua

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674761

    34. Lateral diffusion of photogenerated carriers in InGaN/GaN heterostructures observed by PL measurements (pages 2362–2365)

      C. Vierheilig, H. Braun, U. T. Schwarz, W. Wegscheider, E. Baur, U. Strauß and V. Härle

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674771

    35. Growth and field emission of GaN nanowires grown by metal organic chemical vapour deposition (pages 2366–2370)

      Y. Inoue, A. Tajima, S. Takeda, A. Ishida, H. Mimura and S. Sakakibara

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674775

    36. Formation process of sharp-pointed structures on GaN nanorods during RF-MBE growth and their field emission characteristics (pages 2371–2374)

      M. Terayama, S. Hasegawa, K. Uchida, M. Ishimaru, Y. Hirotsu and H. Asahi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674789

    37. Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy (pages 2375–2378)

      T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta and H. Okumura

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674801

    38. Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping (pages 2379–2382)

      A. Cros, J. A. Budagosky, N. Garro, A. Cantarero, J. Coraux, H. Renevier, M. G. Proietti, V. Favre-Nicolin and B. Daudin

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674804

    39. Dependence of In mole fraction in InGaN on GaN facets (pages 2383–2386)

      K. Nakao, D. B. Li, Y. H. Liu, H. Miyake and K. Hiramatsu

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674807

    40. InAsN quantum dots grown on GaAs(001) substrates by MOVPE (pages 2387–2390)

      S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama and K. Onabe

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674820

    41. Nonlinear piezoelectric properties of GaN quantum dots nucleated at the edge of threading dislocations (pages 2399–2402)

      Paweł Dłużewski, Toby D. Young, Gregorz Jurczak and Jacek A. Majewski

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674866

    42. FE simulation of InGaN QD formation at the edge of threading dislocation in GaN (pages 2403–2406)

      Paweł Dłużewski, Amina Belkadi, Jun Chen, Pierre Ruterana and Gerard Nouet

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674870

    43. Two-step growth of InGaN quantum dots and application to light emitters (pages 2407–2410)

      T. Yamaguchi, J. Dennemarck, C. Tessarek, K. Sebald, S. Gangopadhyay, J. Falta, J. Gutowski, S. Figge and D. Hommel

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674895

    44. Nitride-organic semiconductor hybrid heterostructures for optoelectronic devices (pages 2411–2414)

      Hyunjin Kim, Cuong Dang, Yoon-Kyu Song, Qiang Zhang, William Patterson, A.V. Nurmikko, K.-K. Kim, S.-Y. Song and Jung Han

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674924

    45. InN and InN-rich InGaN

      Polarity control of InN grown by MOVPE on sapphire (0001) (pages 2415–2418)

      W. J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto and A. Yamamoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674744

    46. A new system for growing thick InN layers by hydride vapor phase epitaxy (pages 2419–2422)

      J. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagai and A. Koukitu

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674764

    47. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy (pages 2423–2427)

      Tamara B. Fehlberg, Gilberto A. Umana-Membreno, Chad S. Gallinat, Gregor Koblmüller, Sarah Bernardis, Brett D. Nener, Giacinta Parish and James S. Speck

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674780

    48. Alloy composition fluctuation and band edge energy structure of In-rich InxGa1–xN layers investigated by systematic spectroscopy (pages 2428–2432)

      Yoshihiro Ishitani, Masayuki Fujiwara, Takuro Shinada, Xinqiang Wang, Son-Bek Che and Akihiko Yoshikawa

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674794

    49. Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF-MBE (pages 2437–2440)

      Teruyuki Nakamura, Yuta Endo, Ryuji Katayama, Hiroyuki Yaguchi and Kentaro Onabe

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674803

    50. Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates (pages 2441–2444)

      M. S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto and Y. Ito

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674845

    51. Localized plasmons at pores and clusters within inhomogeneous indium nitride films (pages 2445–2448)

      T. V. Shubina, A. Vasson, J. Leymarie, N. A. Gippius, V. N. Jmerik, B. Monemar and S. V. Ivanov

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674869

    52. InN clusters in InxGa1–xN quantum wells: analysis of bond lengths (pages 2449–2452)

      H. Lei, X. J. Jiang, J. Chen, I. Belabbas, P. Ruterana and G. Nouet

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674873

    53. Origins of n-type residual carriers in RF-MOMBE grown InN layers (pages 2453–2456)

      Kosuke Iwao, Akio Yamamoto and Akihiro Hashimoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674887

    54. Adduct formation of CP2Mg with NH3 in MOVPE growth of Mg-doped InN (pages 2457–2460)

      Y. Nagai, H. Niwa, A. Hashimoto and A. Yamamoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674888

    55. Crystallographic deterioration of MOVPE InN during the growth (pages 2461–2464)

      K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto and A. Yamamoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674889

    56. Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy (pages 2465–2468)

      C.-H. Shen, H.-Y. Chen, H.-W. Lin, C.-Y. Wu, S. Gwo, A. A. Klochikhin and V. Yu. Davydov

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674900

    57. Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3 (pages 2469–2473)

      Z. Liliental-Weber, H. Lu, W. J. Schaff, O. Kryliouk, H. J. Park, J. Mangum and T. Anderson

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674907

    58. Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN (pages 2474–2477)

      T. V. Shubina, M. M. Glazov, S. V. Ivanov, A. Vasson, J. Leymarie, B. Monemar, T. Araki, H. Naoi and Y. Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674908

    59. Polarity dependence of In-rich InGaN ternary alloys grown by RF-MBE (pages 2478–2481)

      T. Shinada, S. B. Che, T. Mizuno, Y. Ishitani and A. Yoshikawa

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674913

    60. AlN and AlGaN optical properties

      AlGaN deep ultraviolet LEDs on bulk AlN substrates (pages 2482–2485)

      Zaiyuan Ren, Q. Sun, S.-Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko, W. Liu, J. Smart and L. Schowalter

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674758

    61. Boron addition effects on aluminum nitride fabricated by radio-frequency plasma-assisted molecular beam epitaxy (pages 2486–2489)

      Masashi Yamashita, Masato Yoshiya, Yukari Ishikawa, Hitoshi Ohsato and Noriyoshi Shibata

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674793

    62. Bright electron emission from Si-doped AlN thin films (pages 2490–2493)

      A. Kishimoto, Y. Inou, T. Kita and O. Wada

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674815

    63. Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE (pages 2494–2497)

      Da-Bing Li, Takuya Katsuno, Masakazu Aoki, Hideto Miyake, Kazumasa Hiramatsu and Tomohiko Shibata

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674852

    64. Continuous order-disorder phase transition (2×2)[RIGHTWARDS ARROW](1×1) on the (0001)AlN surface (pages 2498–2501)

      V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath and B. Pecz

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674867

    65. Mg-doped high-quality AlxGa1–xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy (pages 2502–2505)

      M. Imura, N. Kato, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674880

    66. The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE (pages 2506–2509)

      Tetuso Narita, Yoshio Honda, Masahito Yamaguchi and Nobuhiko Sawaki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674883

    67. Nonpolar and semipolar nitrides

      Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition (pages 2510–2514)

      T. S. Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, T. C. Lu, H. C. Kuo and S. C. Wang

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674714

    68. Material and optical properties of Trenched Epitaxial Lateral Overgrowth of a-plane GaN (pages 2519–2523)

      Te-Chung Wang, Tien-Chang Lu, Tsung-Shine Ko, Hao-Chung Kuo, Hou-Guang Chen, Min Yu, Chang-Cheng Chuo, Zheng-Hong Lee and Sing-Chung Wang

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674765

    69. Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy (pages 2528–2531)

      N. Okada, M. Imura, T. Nagai, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Noro, T. Takagi and A. Bandoh

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674779

    70. Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics (pages 2536–2539)

      T. Paskova, R. Kroeger, D. Hommel, P. P. Paskov, B. Monemar, E. Preble, A. Hanser, N. M. Williams and M. Tutor

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674818

    71. Direct growth of a-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxy (pages 2540–2543)

      Masahiro Araki, Katsuyuki Hoshino and Kazuyuki Tadatomo

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674829

    72. Electrical and optical characterization of M-plane GaN films grown on LiAlO2 substrates (pages 2548–2551)

      C. Rivera, P. Misra, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn and K. H. Ploog

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674841

    73. Microstructure of A-plane InN grown on R-plane sapphire by ECR-MBE (pages 2556–2559)

      S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Na, H. Naoi, T. Araki and Y. Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674903

    74. Growth of A-plane (11-20) In-rich InGaN on R-plane (10-12) sapphire by RF-MBE (pages 2560–2563)

      M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki and Y. Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674904

    75. Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire (pages 2564–2567)

      R. Kröger, T. Paskova, B. Monemar, S. Figge, D. Hommel and A. Rosenauer

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674909

    76. Defects, structural properties and doping

      Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopy (pages 2568–2571)

      Yutaka Tokuda, Youichi Matuoka, Kazuhiro Yoshida, Hiroyuki Ueda, Osamu Ishiguro, Narimasa Soejima and Tetsu Kachi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674704

    77. Practical issues in carrier-contrast imaging of GaN structures (pages 2576–2580)

      J. Sumner, R. A. Oliver, M. J. Kappers and C. J. Humphreys

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674725

    78. Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN (pages 2581–2584)

      Seiji Nakamura, Yuki Ikadai, Masayuki Suda, Michihiko Suhara and Tsugunori Okumura

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674792

    79. Leak current in high resistive GaN buffer layer and its light responsiveness (pages 2585–2588)

      T. Tanaka, Y. Moriya, M. Sahara, T. Yukimoto, H. Kamogawa, Y. Otoki and T. Mishima

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674795

    80. Effects of proton irradiation on electrical and optical properties of n-InN (pages 2589–2592)

      V. V. Emtsev, V. Yu. Davydov, A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov, V. V. Kozlovskii, C.-L. Wu, C.-H. Shen and S. Gwo

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674802

    81. Ionization energy of GaN point defects (pages 2593–2596)

      A. Béré, I. Belabbas, G. Nouet, P. Ruterana, J. Chen, G. Segda and J. Koulidiati

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674817

    82. Two-electron transition spectroscopy of shallow donors in bulk GaN (pages 2601–2604)

      P. P. Paskov, B. Monemar, A. Toropov, J. P. Bergman and A. Usui

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674901

    83. Photoluminescence excitation spectroscopy of Er3+ ions in cubic GaN:Er (pages 2605–2608)

      V. Glukhanyuk, H. Przybylińska and A. Kozanecki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674912

    84. Processing and contacts

      Defect-selective etching of aluminum nitride single crystals (pages 2609–2612)

      M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata and A. Winnacker

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674724

    85. Characterization of free-standing GaN substrates prepared by self lift-off (pages 2617–2620)

      S. W. Lee, H. Goto, T. Minegishi, W. H. Lee, J. S. Ha, H. J. Lee, Hyo-jong Lee, S. H. Lee, T. Goto, T. Hanada, M. W. Cho and T. Yao

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674783

    86. Impact of Si+ implantation on reduction of contact resistance in Ti/Al contact to GaN (pages 2621–2624)

      M. Satoh, N. Itoh, K. Nomoto, T. Nakamura and T. Mishima

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674788

    87. Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs (pages 2625–2628)

      Jae-Soong Lee, Joonhee Lee, Sunghwan Kim and Heonsu Jeon

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674806

    88. Inductively coupled plasma etching of GaN using SiCl4/Cl2/Ar for submicron-sized features fabrication (pages 2634–2637)

      R. Dylewicz, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, A. Tahraoui and S. Patela

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674851

    89. Photo-catalysis effect of III-V nitride film (pages 2642–2645)

      Masatomo Sumiya, Keisuke Ohara, Takeo Ohsawa, Yu. Kawai, Masato Shirai, Shunro Fuke, Hideomi Koinuma and Yuji Matsumoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674886

    90. Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation (pages 2650–2653)

      Katsushi Fujii, Takashi Ito, Masato Ono, Yasuhiro Iwaki, Takafumi Yao and Kazuhiro Ohkawa

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674917

    91. Transport properties and electron devices

      A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure (pages 2654–2657)

      Jin-Ping Ao, Yoshikazu Matsuda, Yuya Yamaoka and Yasuo Ohno

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674701

    92. Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD (pages 2658–2661)

      Masayuki Iwami, Sadahiro Kato, Yoshihiro Satoh, Hitoshi Sasaki and Seikoh Yoshida

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674712

    93. Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates (pages 2662–2665)

      Atsushi Nishikawa, Kazuhide Kumakura and Toshiki Makimoto

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674713

    94. Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates (pages 2670–2673)

      Yvon Cordier, Sébastien Chenot, Marguerite Laügt, Olivier Tottereau, Sylvain Joblot, Fabrice Semond, Jean Massies, Léa Di Cioccio and Hubert Moriceau

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674729

    95. Normally-off operation in AlGaN/GaN/AlGaN double heterojunction field effect transistors (pages 2674–2677)

      Mitsuaki Shimizu, Masaki Inada, Shuichi Yagi, Guanxi Piao, Hajime Okumura, Kazuo Arai, Yoshiki Yano and Nakao Akutsu

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674737

    96. An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers (pages 2678–2681)

      Junjiroh Kikawa, Tomoyuki Yamada, Tadayoshi Tsuchiya, Shinichi Kamiya, Kenichi Kosaka, Akihiro Hinoki, Tsutomu Araki, Akira Suzuki and Yasushi Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674738

    97. Off-state drain current and breakdown voltage of AlGaN/GaN MIS-HEMT with multilayered gate insulator (pages 2682–2685)

      S. Yagi, M. Shimizu, M. Inada, H. Okumura, H. Ohashi, Y. Yano and N. Akutsu

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674739

    98. Suppression of gate leakage current in i-AlGaN/GaN heterostructures by insertion of anodic Al2O3 layer and influence of thermal annealing on channel electrons (pages 2686–2689)

      T. Sawada, K. Takahashi, K. Ise, K. Suzuki, K. Kitamori, N. Kimura, K. Imai, S.-W. Kim and T. Suzuki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674743

    99. Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy (pages 2690–2694)

      T. Yamada, T. Tsuchiya, K. Imada, M. Iwami, J. Kikawa, T. Araki, A. Suzuki and Y. Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674763

    100. AlGaN/GaN MIS-HEMTs with HfO2 gate insulator (pages 2700–2703)

      A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, Takashi Mizutani, H. Ueno, T. Ueda and T. Tanaka

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674769

    101. Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance (pages 2704–2707)

      Kazuki Nomoto, Tomoyoshi Mishima, Masataka Satoh and Tohru Nakamura

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674778

    102. Fabrication of enhancement-mode AlxGa1–xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact (pages 2708–2711)

      T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674790

    103. Analysis of electrical properties of insulators (Si3N4, SiO2, AlN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures (pages 2712–2715)

      Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki and Takashi Kobayashi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674796

    104. Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence (pages 2716–2719)

      Shih-Wei Feng, C. C. Pan, Jen-Inn Chyi, Chien-Nan Kuo and Kuei-Hsien Chen

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674825

    105. Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide (pages 2720–2723)

      D. Gregušová, R. Stoklas, K. Čičo, G. Heidelberger, M. Marso, J. Novák and P. Kordoš

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674828

    106. Correlation between the leakage current and the thickness of GaN-layer of AlGaN/GaN-HFET (pages 2728–2731)

      Akihiro Hinoki, Shinichi Kamiya, Tadayoshi Tsuchiya, Tomoyuki Yamada, Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki and Yasushi Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674848

    107. Quasi-normally-off AlGaN/GaN HEMTs fabricated by fluoride-based plasma treatment (pages 2732–2735)

      Hiroaki Mizuno, Shigeru Kishimoto, Koichi Maezawa and Takashi Mizutani

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674859

    108. Novel field plate structure of AlGaN/GaN HEMTs (pages 2736–2739)

      Akira Nakajima, Mitsuaki Shimizu and Hajime Okumura

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674876

    109. Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE (pages 2740–2743)

      Yoshio Honda, Satoshi Kato, Masahito Yamaguchi and Nobuhiko Sawaki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674902

    110. Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation (pages 2744–2747)

      Kenichi Kosaka, Tatsuya Fujishima, Kaoru Inoue, Akihiro Hinoki, Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya, Akira Suzuki, Tsutomu Araki and Yasushi Nanishi

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674906

    111. Evaluation of AlGaN/GaN-HFET with HfAlO gate insulator (pages 2748–2751)

      H. Sazawa, K. Hirata, M. Kosaki, N. Shibata, K. Furuta, S. Yagi, Y. Tanaka, A. Kinoshita, M. Shimizu and H. Okumura

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674920

    112. Optical properties and devices

      Time-resolved four-wave mixing studies of excitons in GaN (pages 2752–2755)

      K. Yamaguchi, Y. Toda, T. Ishiguro, S. Adachi, K. Hoshino and K. Tadatomo

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674703

    113. Mega-cone blue LEDs based on ZnO/GaN direct wafer bonding (pages 2756–2759)

      A. Murai, D. B. Thompson, H. Masui, N. Fellows, U. K. Mishra, S. Nakamura and S. P. DenBaars

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674710

    114. Photoluminescence study of isoelectronic traps in dilute GaAsN alloys (pages 2760–2763)

      H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, D. Aoki and K. Onabe

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674721

    115. Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes (pages 2772–2775)

      H. Braun, C. Lauterbach, U. T. Schwarz, V. Laino, B. Witzigmann, C. Rumbolz, M. O. Schillgalies, A. Lell, V. Härle and U. Strauß

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674740

    116. Coherent manipulation of A and B excitons in GaN (pages 2776–2779)

      T. Ishiguro, Y. Toda, S. Adachi, K. Hazu, T. Sota and S. F. Chichibu

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674741

    117. Radiative and non-radiative transitions in blue quantum wells embedded in AlInGaN-based laser diodes (pages 2780–2783)

      J. K. Son, S. N. Lee, H. S. Paek, T. Sakong, K. H. Ha, O. H. Nam and Y. Park

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674746

    118. Temperature dependence of the quantum efficiency in green light emitting diode dies (pages 2784–2787)

      Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E. F. Schubert and C. Wetzel

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674750

    119. Inhomogeneity of InGaN quantum wells in GaN-based blue laser diodes (pages 2788–2792)

      Sung-Nam Lee, H. Y. Ryu, H. S. Paek, J. K. Son, T. Sakong, T. Jang, Y. J. Sung, K. S. Kim, K. H. Ha, O. H. Nam and Y. Park

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674754

    120. Investigation of local tunneling phenomena in green InGaN-based LEDs (pages 2793–2796)

      Grigory Onushkin, Jinhyun Lee, Jung-Ja Yang, Seong-Eun Park, Min-Ho Kim and Masayoshi Koike

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674787

    121. Improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes (pages 2797–2801)

      Gwo-Mei Wu, Ta-Jen Chung, Tzer-En Nee, Da-Chuan Kuo, Wei-Jen Chen, Chih-Chun Ke, Cheng-Wei Hung, Jen-Cheng Wang and Nei-Chuan Chen

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674791

    122. Temperature measurement of GaN-based blue-violet laser diodes in operation by Raman microprobe (pages 2802–2805)

      Kenji Takahashi, Daisuke Matsuoka, Hiroshi Harima, Kenji Kisoda, Yuhzoh Tsuda, Takayuki Yuasa and Mototaka Taneya

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674800

    123. Extraction-efficiency enhancement of InGaN-based vertical LEDs on hemispherically patterned sapphire (pages 2806–2809)

      Jae-Hoon Lee, Jeong-Tak Oh, Seok-Boem Choi, Jong-Gun Woo, Su-Yeol Lee and Myoung-Bok Lee

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674821

    124. Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate (pages 2810–2813)

      Y. Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, K. Nishino, S. Sakai, S. M. Lee and M. Koike

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674826

    125. Electroluminescence uniformity in green LEDs and dual color blue/green stacking LEDs (pages 2814–2817)

      Grigory Onushkin, Jinhyun Lee, Jung-Ja Yang, Seong-Suk Lee, In-Chul Lee, Min-Ho Kim and Masayoshi Koike

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674786

    126. Micro-analysis of light emission properties of GaN-based laser diodes (pages 2818–2821)

      M. Godlewski, R. Bożek, S. Miasojedovas, S. Juršėnas, K. Kazlauskas, A. Žukauskas, M. R. Phillips, R. Czernecki, G. Targowski, P. Perlin, M. Leszczyński, T. Böttcher, S. Figge and D. Hommel

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674854

    127. Near-UV to violet LEDs – Wavelength dependence of efficiency limiting processes (pages 2822–2825)

      M. Kunzer, U. Kaufmann, K. Köhler, C. C. Leancu, S. Liu and J. Wagner

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674863

    128. Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures (pages 2826–2829)

      M. Ueda, K. Hayashi, T. Kondou, M. Funato, Y. Kawakami, Y. Narukawa and T. Mukai

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674875

    129. Multi-color light emitting diode using polarization-induced tunnel junctions (pages 2830–2833)

      Michael J. Grundmann and Umesh K. Mishra

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200675000

    130. Effects of junction temperature and its variations on the performance of GaN-based high power flip-chip LEDs (pages 2834–2837)

      L. Lin, Z. Z. Chen, H. P. Pan, S. L. Qi, P. Liu, Z. X. Qin, T. J. Yu, B. Zhang, Y. Z. Tong and G. Y. Zhang

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674882

    131. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate (pages 2838–2841)

      Eunhee Kim, Tetsuo Narita, Yoshio Honda, Masahito Yamaguchi and Nobuhiko Sawaki

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674899

    132. Wave guide optimization for homoepitaxial laser diodes (pages 2842–2845)

      S. Figge, J. Dennemarck, T. Aschenbrenner, A. Zargham and D. Hommel

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674916

    133. Detectors

    134. Wide spectral responses InxGa1–xN deep UV photomultiplier tube (pages 2850–2853)

      Shoichi Uchiyama, Yasufumi Takagi, Haruyasu Kondoh, Hiroyuki Takatsuka, Hideaki Suzuki, Yasuo Ohishi, Nobuharu Suzuki, Kazuyoshi Okano, Minoru Niigaki and Hirofumi Kan

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674776

    135. 1.2-eV GaAsN/InGaAs strain-compensated superlattice structures for high efficiency solar cells (pages 2854–2858)

      Pei-Hsuan Wu, Yan-Kuin Su, I-Liang Chen, Chih-Hung Chiou, Jung-Tsung Hsu and Wen-Ray Chen

      Version of Record online: 1 JUN 2007 | DOI: 10.1002/pssc.200674910

SEARCH

SEARCH BY CITATION