physica status solidi (c)

Cover image for Vol. 7 Issue 1

Special Issue: E-MRS 2009 Spring Meeting, Symposium J: Group III Nitride Semiconductors

January 2010

Volume 7, Issue 1

Pages 1–119

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    1. Cover Picture: Phys. Status Solidi C 7/1

      Version of Record online: 12 JAN 2010 | DOI: 10.1002/pssc.201090000

      Thumbnail image of graphical abstract

      Research activities at the Institute of Semiconductor Technology, Braunschweig University of Technology, are aiming at true white emitting phosphorless light emitting diodes (LEDs). The scanning electron micrograph from the work of Shunfeng Li et al. on p. 84 ff. shows a deeply etched silicon pillar array with gallium nitride based LED structures on top, grown by metalorganic vapor phase epitaxy (MOVPE). The colors are superimposed and correspond to the multiple quantum well emission at 500 nm and 407 nm in the left and right part of the picture, respectively. The different colors are caused by the In composition, which varies with the crystallographic orientation of the facets.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    1. Back Cover: Phys. Status Solidi C 7/1

      Version of Record online: 12 JAN 2010 | DOI: 10.1002/pssc.201090001

      Thumbnail image of graphical abstract

      In the study on p. 40 ff., Liang-Yih Chen et al. study the effect of reactive gas flow rates on the morphologies of GaN nanowires (NWs). Various NH3 flow rates were used to grow GaN NWs. The surfaces of the nanowires became smooth when the flow rate decreased. In addition, as an interesting result it was observed that the Au catalyst disappeared when a high NH3 flow rate was used for the same growth time. The cross-sectional image of GaN NWs grown at high NH3 flow rate was triangular and the outer surfaces of the nanowires were covered with an amorphous carbon shell at low flow rates.

  3. Editorial

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    1. The Best of pss (pages 1–2)

      Editor-in-Chief Martin Stutzmann

      Version of Record online: 12 JAN 2010 | DOI: 10.1002/pssc.201060082

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
  5. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    1. Preface: Phys. Status Solidi C 7/1 (pages 7–8)

      Olivier Briot, Axel Hoffmann, Yasushi Nanishi, Fernando A. Ponce and Guest Editors

      Version of Record online: 12 JAN 2010 | DOI: 10.1002/pssc.201060084

  6. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Editorial
    5. Contents
    6. Preface
    7. Contributed Articles
    1. Growth and materials

      Natural oxidation of InN quantum dots: the role of cubic InN (pages 9–12)

      David González, Juan G. Lozano, Miriam Herrera, Nigel D. Browning, Sandra Ruffenach, Olivier Briot and Rafael García

      Version of Record online: 16 DEC 2009 | DOI: 10.1002/pssc.200982624

    2. Thermal oxidation of lattice matched InAlN/GaN heterostructures (pages 13–16)

      M. Alomari, A. Chuvilin, L. Toth, B. Pecz, J.-F. Carlin, N. Grandjean, C. Gaquière, M.-A. di Forte-Poisson, S. Delage and E. Kohn

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982623

    3. Growth of atomically smooth cubic AlN by molecular beam epitaxy (pages 17–20)

      Thorsten Schupp, Georg Rossbach, Pascal Schley, Rüdiger Goldhahn, Klaus Lischka and Donat Josef As

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982619

    4. UV transparent single-crystalline bulk AlN substrates (pages 21–24)

      Matthias Bickermann, Boris M. Epelbaum, Octavian Filip, Paul Heimann, Shunro Nagata and Albrecht Winnacker

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982601

    5. Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy (pages 25–27)

      Rashid Farivar and Thorvald G. Andersson

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982610

    6. Boule-like growth of GaN by HVPE (pages 28–31)

      Eberhard Richter, Ute Zeimer, Frank Brunner, Sylvia Hagedorn, Markus Weyers and Günther Tränkle

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982616

    7. Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE (pages 32–35)

      Chaowang Liu, Philip A. Shields, Qin Chen, Duncan W. E. Allsopp, Wang Nang Wang, Chris R. Bowen, T.-L. Phan and David Cherns

      Version of Record online: 16 DEC 2009 | DOI: 10.1002/pssc.200982618

    8. Indium implantation and annealing of GaN: Lattice damage and recovery (pages 36–39)

      M. Katsikini, J. Arvanitidis, S. Ves, E. C. Paloura, E. Wendler and W. Wesch

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982631

    9. Influence of gas flow rates on the formation of III-nitride nanowires (pages 40–43)

      Liang-Yih Chen, Cheng-I Liao and Hsuan-Ying Peng

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982611

    10. Study of implantation-induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications (pages 44–47)

      R. Singh, U. Dadwal, R. Scholz, O. Moutanabbir, S. Christiansen and U. Gösele

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982630

    11. Physics and characterization

      Evidence of excitonic transitions by angle-resolved reflectivity for the determination of oscillator strengths in GaN/(Al,Ga)N quantum wells (pages 48–51)

      G. Rakotonanahary, S. Aberra Guebrou, D. Lagarde, F. Natali, F. Reveret, P. Disseix, J. Leymarie, M. Leroux and J. Massies

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982614

    12. Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers (pages 56–59)

      A. Margarida Bola, M. R. Correia, S. Pereira, J. C. González, K. Lorenz, E. Alves and N. Barradas

      Version of Record online: 16 DEC 2009 | DOI: 10.1002/pssc.200982632

    13. Inter- and intrasubband spectroscopy of cubic AlN/GaN superlattices grown by molecular beam epitaxy on 3C-SiC (pages 64–67)

      C. Mietze, E. A. DeCuir Jr., M. O. Manasreh, K. Lischka and D. J. As

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982612

    14. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE (pages 68–71)

      Oscar Martínez, Manuel Avella, Juan Jiménez, Matteo Bosi and Roberto Fornari

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982617

    15. Raman scattering of InxAl1-xN alloys with 0.2 < x < 0.9 (pages 76–79)

      M. Katsikini, J. Arvanitidis, D. Christofilos, S. Ves, A. Adikimenakis and A. Georgakilas

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982607

    16. Built-in fields in non-polar InxGa1–xN quantum dots (pages 80–83)

      Stefan Schulz and Eoin P. O'Reilly

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982609

    17. Device studies

      GaN and LED structures grown on pre-patterned silicon pillar arrays (pages 84–87)

      Shunfeng Li, Sönke Fündling, Ünsal Sökmen, Stephan Merzsch, Richard Neumann, Peter Hinze, Thomas Weimann, Uwe Jahn, Achim Trampert, Henning Riechert, Erwin Peiner, Hergo-Heinrich Wehmann and Andreas Waag

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982608

    18. Light extraction from GaN-based LED structures on silicon-on-insulator substrates (pages 88–91)

      S. Tripathy, S. L. Teo, V. K. X. Lin, M. F. Chen, A. Dadgar, J. Christen and A. Krost

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982637

    19. Deep traps analysis in AlGaN/GaN heterostructure transistors (pages 92–95)

      W. Chikhaoui, J M. Bluet, C. Bru-Chevallier, C. Dua and R. Aubry

      Version of Record online: 16 DEC 2009 | DOI: 10.1002/pssc.200982634

    20. Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths (pages 100–103)

      F. B. Naranjo, P. K. Kandaswamy, S. Valdueza-Felip, L. Lahourcade, V. Calvo, M. González-Herráez, S. Martín-López, P. Corredera and E. Monroy

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982628

    21. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+ implanted 3C-SiC (001) (pages 104–107)

      Elena Tschumak, J. K. N. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe and D. J. As

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982615

    22. Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing (pages 108–111)

      Karol Čičo, Dagmar Gregušová, Štefan Gaži, Ján Šoltýs, Ján Kuzmík, Jean-François Carlin, Nicolas Grandjean, Dionýz Pogany and Karol Fröhlich

      Version of Record online: 16 DEC 2009 | DOI: 10.1002/pssc.200982640

    23. Ni based planar Schottky diodes on gallium nitride (GaN) grown on sapphire (pages 112–115)

      Olivier Ménard, Frédéric Cayrel, Emmanuel Collard and Daniel Alquier

      Version of Record online: 16 DEC 2009 | DOI: 10.1002/pssc.200982621

    24. Resonant MEMS based on cubic GaN layers (pages 116–119)

      F. Niebelschütz, K. Brueckner, W. Jatal, E. Tschumak, D. J. As, M. A. Hein and J. Pezoldt

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982613

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