physica status solidi (c)

Cover image for Vol. 7 Issue 10

Special Issue: 36th International Symposium on Compound Semiconductors (ISCS 2009)

October 2010

Volume 7, Issue 10

Pages 2341–2585

  1. Cover Picture

    1. Top of page
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    3. Back Cover
    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
    9. Contributed Articles
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    1. Front Cover: phys. stat. sol. (c) 7/10

      Version of Record online: 15 SEP 2010 | DOI: 10.1002/pssc.201090014

      Thumbnail image of graphical abstract

      J. E. Bowers et al. describe in their article on pp. 2526 recent research on Ge/Si (avalanche) photodetectors with large gain bandwidth products. The picture shows arrays of Ge/Si (avalanche) photodetectors in wafers fabricated with CMOS (Complementary Metal-Oxide-Semiconductor)-compatible processes. The cross sections for normal-incidence avalanche photodetectors and waveguide-type photodetectors are also shown. The large asymmetry in the avalanche coefficients of electrons and holes in silicon results in large gain-bandwidth product and low noise performance.

      Professor Bowers' research interests are in silicon photonic integrated circuits for the next generation of coherent optical systems.

  2. Back Cover

    1. Top of page
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    3. Back Cover
    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
    9. Contributed Articles
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    1. Back Cover: phys. stat. sol. (c) 7/10

      Version of Record online: 15 SEP 2010 | DOI: 10.1002/pssc.201090016

      Thumbnail image of graphical abstract

      In their article on pp. 2423, Jianyu Deng et al. describe microwave transmission and CCD image of III-N MOSHFET Single Pole Double Throw switch MMIC. Such switches now dominate modern RF systems. These novel devices might replace RF MEMs because of their superb linearity, reliability, high switching powers, low insertion loss, high isolation, and operation from cryogenic to high temperatures.

  3. Frontispiece

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    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
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    1. Frontispiece: phys. stat. sol. (c) 7/10

      Version of Record online: 15 SEP 2010 | DOI: 10.1002/pssc.201090017

      Thumbnail image of graphical abstract

      The effects of internal polarization-related drift and diffusion on the emitted terahertz radiation from nonpolar and polar nitride semiconductors is demonstrated in the article by G. D. Metcalfe et al., pp. 2455. Enhanced terahertz radiation is observed from c -plane InN/InGaN multiple quantum wells due to surface normal transport in electric fields associated with the termination of internal polarization at the well/barrier interfaces. From high stacking fault density nonpolar GaN, further enhanced THz emission is observed due to lateral transport in built-in fields along the c-axis associated with stacking fault terminated internal polarization. As shown in this frontispiece plot of s-polarized time-resolved terahertz emission from m -plane GaN, in-plane transport of photoexcited carriers proceeds parallel to the electric field, leading to terahertz radiation polarized preferentially along the c-axis of the sample. When the sample is rotated by 180°, the lateral electric field also rotates by 180°, causing the photoexcited carriers to accelerate in the opposite direction, which is observed as a flip in the terahertz waveform polarity.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
    9. Contributed Articles
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  5. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
    9. Contributed Articles
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    1. Preface: phys. stat. sol. (c) 7/10 (pages 2349–2352)

      Pallab Bhattacharya, Umesh K. Mishra, Stacia Keller and Yuvaraj Dora

      Version of Record online: 15 SEP 2010 | DOI: 10.1002/pssc.201060098

  6. Awards

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    7. Awards
    8. Invited Article
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    5. Contents
    6. Preface
    7. Awards
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    1. Wide band gap materials and devices

      Optical and structural properties of m -plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates (pages 2359–2364)

      R. Kudrawiec, M. Rudziński, R. Kucharski, M. Zając, R. Doradziński, L. P. Sierzputowski, J. Garczyński, J. Serafińczuk, W. Strupiński, J. Misiewicz and R. Dwiliński

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983880

  8. Contributed Articles

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    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
    9. Contributed Articles
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    1. Wide band gap materials and devices

    2. Atomic layer epitaxy of AlGaN (pages 2368–2370)

      Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983862

    3. Polarization field crossover in semi-polar InGaN/GaN single quantum wells (pages 2378–2381)

      H. Shen, G. A. Garrett, M. Wraback, H. Zhong, A. Tyagi, S. P. DenBaars, S. Nakamura and J. S. Speck

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983893

    4. GaInN/GaN p-i-n light-emitting solar cells (pages 2382–2385)

      Y. Fujiyama, Y. Kuwahara, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

      Version of Record online: 3 AUG 2010 | DOI: 10.1002/pssc.200983903

    5. Short-period AlN/GaN p-type superlattices: hole transport use in p-n junctions (pages 2386–2389)

      John Simon, Yu Cao and Debdeep Jena

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983868

    6. Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence (pages 2390–2393)

      G. A. Garrett, A. V. Sampath, H. Shen, M. Wraback, W. Sun, M. Shatalov, X. Hu, J. Yang, Y. Bilenko, A. Lunev, M. S. Shur, R. Gaska, J. R. Grandusky and L. J. Schowalter

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983906

    7. Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications (pages 2394–2397)

      Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Theodore D. Moustakas, Roberto Paiella, Lin Zhou and David J. Smith

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983905

  9. Invited Article

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    5. Contents
    6. Preface
    7. Awards
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    1. Wide band gap materials and devices

      Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency (pages 2398–2403)

      P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, K. Köhler, M. Mikulla, O. Ambacher, L. Harm, M. Lorenzini, T. Rödle, K. Riepe, K. Bellmann, C. Buchheim and R. Goldhahn

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983853

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    1. Top of page
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    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
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    1. Wide band gap materials and devices

      Growth and characterization of AlGaN/GaN/AlGaN field effect transistors (pages 2404–2407)

      Z. Chen, Y. Pei, R. Chu, S. Newman, D. Brown, R. Chung, S. Keller, S. P. DenBaars, S. Nakamura and U. K. Mishra

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983890

    2. AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates (pages 2408–2411)

      Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl and Günther Tränkle

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983881

    3. Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate (pages 2412–2414)

      Subramaniam Arulkumaran, Ng Geok Ing, Vicknesh Sahmuganathan, Liu Zhihong and Bryan Maung

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983860

    4. Normally-on/off AlN/GaN high electron mobility transistors (pages 2415–2418)

      C. Y. Chang, C. F. Lo, F. Ren, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, B. Cui and P. P. Chow

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983901

    5. Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate (pages 2419–2422)

      Takayuki Sugiyama, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki

      Version of Record online: 9 JUL 2010 | DOI: 10.1002/pssc.200983863

    6. Insertion loss and linearity of III-nitride microwave switches (pages 2423–2425)

      Jianyu Deng, Jinwei Yang, Xuhong Hu, Remis Gaska, Bilal Khan, Grigory Simin and Michael Shur

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983898

    7. Space-charge-limited current transport in nitride HFETs (pages 2426–2428)

      R. D. Schimizzi, R. J. Trew and G. L. Bilbro

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983866

    8. Suppression of current collapse for millimeter-wave GaN-HEMTs (pages 2429–2432)

      Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi, Naoki Hara and Toshihide Kikkawa

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983902

    9. High frequency performance of Ga free barrier AlInN/GaN HEMT (pages 2433–2435)

      A. Crespo, M. Bellott, K. Chabak, J. K. Gillespie, G. H. Jessen, M. Kossler, V. Trimble, M. Trejo, G. D. Via, B. Winningham, H. E. Smith, D. Walker, T. Cooper, X. Gao and S. Guo

      Version of Record online: 9 JUL 2010 | DOI: 10.1002/pssc.200983886

    10. Microstructure and field mapping of AlInN-based heterostructures and devices (pages 2436–2439)

      Lin Zhou, David A Cullen, Martha R. McCartney, Jacob H. Leach, Qian Fan, Hadis Morkoç and David J. Smith

      Version of Record online: 9 JUL 2010 | DOI: 10.1002/pssc.200983857

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    1. Top of page
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    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
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    1. Wide band gap materials and devices

      Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance (pages 2440–2444)

      Han Wang, Jinwook W. Chung, Xiang Gao, Shiping Guo and Tomas Palacios

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983899

  12. Contributed Articles

    1. Top of page
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    4. Frontispiece
    5. Contents
    6. Preface
    7. Awards
    8. Invited Article
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    1. Wide band gap materials and devices

      RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations (pages 2445–2449)

      Fabio Alessio Marino, Diego Guerra, Stephen Goodnick, David Ferry and Marco Saraniti

      Version of Record online: 9 JUL 2010 | DOI: 10.1002/pssc.200983887

    2. A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design (pages 2450–2454)

      Valiallah Zomorrodian, Yi Pei, Umesh K. Mishra and Robert A. York

      Version of Record online: 9 JUL 2010 | DOI: 10.1002/pssc.200983877

    3. Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization (pages 2455–2458)

      Grace D. Metcalfe, Hongen Shen, Michael Wraback, Asako Hirai, Gregor Koblmüller, Chad S. Gallinat and James S. Speck

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983855

    4. High efficiency violet to blue light emission in porous SiC produced by anodic method (pages 2459–2462)

      T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983908

    5. Corundum-structured α-phase Ga2O3-Cr2O3-Fe2O3 alloy system for novel functions (pages 2467–2470)

      Kentaro Kaneko, Taichi Nomura and Shizuo Fujita

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983896

    6. Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method (pages 2471–2473)

      Tohru Honda, Takuto Oda, Yoshihiro Mashiyama, Hiroki Hara and Mitsunobu Sato

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983871

    7. GaAs, GaP and InP based materials and devices

    8. Optical Kerr signals of GaAs/AlAs multilayer cavities with two-photon resonant quantum wells in the half-wavelength layer (pages 2478–2481)

      Toshiro Isu, Toshiyuki Kanbara, Tomoya Takahashi, Ken Morita and Takahiro Kitada

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983872

    9. Optical anisotropy of two-photon absorption in GaAs/AlGaAs quantum wells measured by photoluminescence (pages 2482–2485)

      Ken Morita, Nobuyoshi Niki, Tkahiro Kada and Tosiro Isu

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983884

    10. Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE (pages 2486–2489)

      Jiro Nishinaga, Takashi Hayashi, Kiyoshi Hishida and Yoshiji Horikoshi

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983852

    11. (Ga,In)P emitter composition effect on the performance of (Ga,In)P/GaAsSb/InP DHBTs grown by MOCVD (pages 2490–2493)

      Yuping Zeng, Rickard Lövblom, Olivier Ostinelli and C. R. Bolognesi

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983883

    12. Wurtzite InP nanowire arrays grown by selective area MOCVD (pages 2494–2497)

      Hyung-Joon Chu, Ting-Wei Yeh, Lawrence Stewart and P. Daniel Dapkus

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983910

    13. Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy (pages 2498–2501)

      S. Mitsuyoshi, K. Umeno, Y. Furukawa, N. Urakami, A. Wakahara and H. Yonezu

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983851

    14. Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs (pages 2502–2505)

      R. Akis, N. Faralli, S. M. Goodnick, D. K. Ferry and M. Saraniti

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983856

    15. Narrow band gap materials and devices

      Heterostructure engineering in Type II InAs/GaSb strained layer superlattices (pages 2506–2509)

      Stephen Myers, Elena Plis, Ha Sul Kim, Arezou Khoshakhlagh, Nutan Gautam, Sang Jun Lee, Sam Kyu Noh and Sanjay Krishna

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983869

    16. Hg(1-x)CdxTe from short to long wave infrared on Si substrates grown by MBE (pages 2518–2521)

      M. F. Vilela, K. R. Olsson, M. Reddy, J. M. Peterson, J. J. Franklin, T. Vang, D. D. Lofgreen and S. M. Johnson

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983865

    17. Large format HgCdTe focal plane arrays for dual-band long-wavelength infrared detection (pages 2522–2525)

      E. P. G. Smith, A. M. Gallagher, T. J. Kostrzewa, M. L. Brest, R. W. Graham, C. L. Kuzen, E. T. Hughes, T. F. Mc Ewan, G. M. Venzor, E. A. Patten and W. A. Radford

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983888

  13. Invited Article

    1. Top of page
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    5. Contents
    6. Preface
    7. Awards
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    1. Silicon and germanium based materials and devices

      Recent advances in Ge/Si PIN and APD photodetectors (pages 2526–2531)

      John E. Bowers, Anand Ramaswamy, Daoxin Dai, Wissem Sfar Zaoui, Yimin Kang, Tao Yin and Mike Morse

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983875

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    1. Silicon and germanium based materials and devices

      Equivalent circuit model of a waveguide-type Ge/Si avalanche photodetector (pages 2532–2535)

      Daoxin Dai, Hui-wen Chen, John E. Bowers, Yimin Kang, Mike Morse and Mario J. Paniccia

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983874

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    1. Top of page
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    1. Optoelectronic devices

      Infrared single photon avalanche detectors (pages 2536–2539)

      Joe C. Campbell and Chong Hu

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983891

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    1. Optoelectronic devices

      Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors (pages 2540–2543)

      G. R. Savich, J. R. Pedrazzani, S. Maimon and G. W. Wicks

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983911

    2. High-performance nanoparticle-enhanced tunnel junctions for photonic devices (pages 2544–2547)

      Adam M. Crook, Hari P. Nair and Seth R. Bank

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983914

    3. Linear-mode operation of the quantum-dot avalanche photodiode (QDAP) (pages 2548–2551)

      David A. Ramirez, Jiayi Shao, Majeed M. Hayat and Sanjay Krishna

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983867

    4. Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation (pages 2552–2554)

      T. D. Germann, A. Strittmatter, A. Mutig, A. M. Nadtochiy, J. A. Lott, S. A. Blokhin, L. Ya. Karachinsky, V. A. Shchukin, N. N. Ledentsov, U. W. Pohl and D. Bimberg

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983889

    5. Equivalent circuit modeling of triple-barrier resonant tunneling diodes taking nonlinear quantum inductance and capacitance into account (pages 2555–2558)

      Kiyoto Asakawa, Mamoru Naoi, Yuichi Iki, Masaaki Shinada and Michihiko Suhara

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983885

    6. Theory

      Density functional theory study of lithium and fluoride doped boron nitride sheet (pages 2559–2561)

      Ernesto Chigo Anota, Martín Salazar Villanueva and Heriberto Hernández Cocoletzi

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983909

    7. Static skin effect in the quantum Hall regime for high-mobility electrons on a cylindrical surface (pages 2562–2565)

      K.-J. Friedland, R. Hey, A. Riedel and D. K. Maude

      Version of Record online: 15 JUN 2010 | DOI: 10.1002/pssc.200983892

    8. Next generation devices

      Nuclear spin polarization and relaxation probed by spin phase transition peak (pages 2570–2573)

      S. Watanabe, M. H. Fauzi, N. Kumada and Y. Hirayama

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983904

    9. Fabrication of a spin-polarized electron emitter with <110>-oriented magnetite whisker (pages 2574–2577)

      Morihiro Okada, Shigekazu Nagai, Yoichiro Neo, Koichi Hata and Hidenori Mimura

      Version of Record online: 9 JUL 2010 | DOI: 10.1002/pssc.200983897

    10. Acoustic phonon effects on telecommunication-band quantum dot exciton Rabi oscillation (pages 2578–2581)

      Toshiyuki Miyazawa, Toshihiro Nakaoka, Tetsuo Kodera, Hiroyuki Takagi, Naoto Kumagai, Katsuyuki Watanabe and Yasuhiko Arakawa

      Version of Record online: 22 JUN 2010 | DOI: 10.1002/pssc.200983861

    11. Enhancements of emission rates and efficiencies by surface plasmon coupling (pages 2582–2585)

      Koichi Okamoto and Yoichi Kawakami

      Version of Record online: 9 JUL 2010 | DOI: 10.1002/pssc.200983854

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