physica status solidi (c)

Cover image for Vol. 7 Issue 2

Special Issue: 12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12)

February 2010

Volume 7, Issue 2

Pages 121–471

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Cover Picture: Phys. Status Solidi C 7/2

      Version of Record online: 10 FEB 2010 | DOI: 10.1002/pssc.201090002

      Thumbnail image of graphical abstract

      One-dimensional disorder on III–V semiconductor surfaces is studied by ab initio total energy calculations in the article by O. Romanyuk, F. Grosse, and W. Braun on p. 330 ff. Disorder is introduced by coexisting rec-tangular and oblique Bravais lattices on the GaSb(001) and GaAs(001) surfaces. The atomic rows of the GaSb(001) β(4 × 3) reconstruction are shifted easily relative to each other as shown in the cover picture. As an open structure, i.e. building blocks are separated by deeper trenches, it can accommodate the stress due to shifting of the rows and the corresponding energetic cost is small. The gain in total energy due to the lattice distortion is much larger for surfaces with more rigid structures like GaAs(001) c(4 × 4).

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Back Cover: Phys. Status Solidi C 7/2

      Version of Record online: 10 FEB 2010 | DOI: 10.1002/pssc.201090003

      Thumbnail image of graphical abstract

      On p. 359 ff. A. Ishii et al. determine the atomic structure of palladium as a catalyst on the sulfur terminated GaAs(001) –(2 × 1) surface using density functional theory. The role of sulfur for the palladium catalyst is to strengthen the bonding of palladium to the GaAs substrate. The upper figures show the calculated adsorp-tion energy contour maps for the adsorption of Pd on the S-terminated GaAs surface for the As-dimer (left) and the S-dimer model (right), respectively, as depicted in the side views of Pd and S on GaAs(001) below.

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
  4. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Preface: Phys. Status Solidi C 7/2 (pages 129–131)

      Friedhelm Bechstedt, Dietrich R. T. Zahn, Yasushi Nanishi and Fernando A. Ponce

      Version of Record online: 10 FEB 2010 | DOI: 10.1002/pssc.201060086

  5. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Surfaces and deposition

      Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated from first-principles (pages 133–136)

      S. Wippermann, W. G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer and J. F. McGilp

      Version of Record online: 14 JAN 2010 | DOI: 10.1002/pssc.200982413

    2. Dissociative and molecular adsorption of water on α -Al2O3(0001) (pages 137–140)

      S. Wippermann, W. G. Schmidt, P. Thissen and G. Grundmeier

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982423

    3. Designing the Si(100) conversion into SiC(100) by Ge (pages 141–144)

      Richard Nader, Florentina Niebelschütz, Dmitri V. Kulikov, Vladimir V. Kharlamov, Yurii V. Trushin, Pierre Masri and Jörg Pezoldt

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982448

    4. Ab initio investigation of the LiNbO3 (0001) surface (pages 145–148)

      Simone Sanna, Alexander V. Gavrilenko and Wolf Gero Schmidt

      Version of Record online: 1 DEC 2009 | DOI: 10.1002/pssc.200982456

    5. Interface with organic molecules: Cysteine on Au(110) (pages 149–152)

      Benjamin Höffling, Frank Ortmann, Karsten Hannewald and Friedhelm Bechstedt

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982457

    6. The physics of highly ordered molecular rows (pages 153–156)

      S. Blankenburg, E. Rauls and W. G. Schmidt

      Version of Record online: 1 DEC 2009 | DOI: 10.1002/pssc.200982459

    7. Ab initiog -tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces (pages 157–160)

      U. Gerstmann, M. Rohrmüller, F. Mauri and W.G. Schmidt

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982462

    8. Photoluminescence and surface photovoltage of ethynyl derivative-terminated Si(111) surfaces (pages 161–164)

      Florent Yang, Ralf Hunger, Klaus Rademann and Jörg Rappich

      Version of Record online: 1 DEC 2009 | DOI: 10.1002/pssc.200982474

    9. Electronic growth of Pb on the vicinal Si surface (pages 165–168)

      D. A. Fokin, S. I. Bozhko, V. Dubost, F. Debontridder, A. M. Ionov, T. Cren and D. Roditchev

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982480

    10. Interaction of GaN(0001)-2×2 surfaces with H2O (pages 169–172)

      P. Lorenz, R. Gutt, T. Haensel, M. Himmerlich, J. A. Schaefer and S. Krischok

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982488

    11. Electron-phonon-plasmon interaction in MBE-grown indium nitride – A high resolution electron energy loss spectroscopy (HREELS) study (pages 173–176)

      K. Kloeckner, M. Himmerlich, R. J. Koch, V. M. Polyakov, A. Eisenhardt, T. Haensel, S. I.-U. Ahmed, S. Krischok and J. A. Schaefer

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982494

    12. Structure and optical properties of the Sb-stabilized GaSb(001) surface (pages 177–180)

      Conor Hogan, Rita Magri and Rodolfo Del Sole

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982499

    13. Effects of wetting layer structure on surface phase stability and on indium surface diffusion (pages 181–184)

      Marcello Rosini, Peter Kratzer and Rita Magri

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982501

    14. Domain boundaries of the Si(111)-Ge5×5 reconstruction (pages 185–188)

      A. G. Mark and A. B. McLean

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982507

    15. Liquid–solid-interfaces

    16. SXPS study of model GaAs(100)/electrolyte interface (pages 193–196)

      Mikhail V. Lebedev, Eric Mankel, Thomas Mayer and Wolfram Jaegermann

      Version of Record online: 1 DEC 2009 | DOI: 10.1002/pssc.200982439

    17. In-situ IR synchrotron mapping ellipsometry on stimuli-responsive PAA-b-PS/PEG mixed polymer brushes (pages 197–199)

      Dennis Aulich, Olha Hoy, Igor Luzinov, Klaus-Jochen Eichhorn, Manfred Stamm, Michael Gensch, Ullrich Schade, Norbert Esser and Karsten Hinrichs

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982492

  6. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Organic interfaces

      Molecular and biomolecular interfaces to metal oxide semiconductors (pages 200–205)

      Robert J. Hamers, Scott A. Chambers, Paul E. Evans, Ryan Franking, Zachary Gerbec, Padma Gopalan, Heesuk Kim, Elizabeth C. Landis, Bo Li, Michael W. McCoy, Takeo Ohsawa and Rose Ruther

      Version of Record online: 14 JAN 2010 | DOI: 10.1002/pssc.200982472

  7. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Preface
    6. Contributed Articles
    7. Invited Article
    8. Contributed Articles
    1. Organic interfaces

      A hybrid approach to the surface biofunctionalization of nanostructured porous alumina (pages 206–209)

      Miguel Manso Silván, Ruy Sanz González, Josefa Predestinación García Ruiz and Manuel Hernández Vélez

      Version of Record online: 14 JAN 2010 | DOI: 10.1002/pssc.200982432

    2. Passivation of Si surfaces by hydrogen and organic molecules investigated by in-situ photoluminescence techniques (pages 210–213)

      Joerg Rappich, Xin Zhang, Sébastien Chapel, Guoguang Sun and Karsten Hinrichs

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982438

    3. In-plane optical anisotropy of copper-phthalocyanine films: RAS studies and modelling (pages 214–217)

      Michael Fronk, Dietrich R. T. Zahn and Georgeta Salvan

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982447

    4. Adsorption of lead phthalocyanine on the hydrogen-passivated Ge(001)-2x1 surface (pages 218–221)

      B. N. Holland, G. Gavrila, D. R. T. Zahn, A. A. Cafolla, C. McGuinness and I. T. McGovern

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982463

    5. Spectroscopic ellipsometry and reflection anisotropy spectroscopy of lutetium diphthalocyanine films on silicon (pages 222–226)

      Falko Seidel, Michael Fronk, Cameliu Himcinschi, Vasile Chis and Dietrich R. T. Zahn

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982464

    6. Self-assembled monolayers on silicon oxide (pages 227–231)

      Christian Belgardt, Harald Graaf, Thomas Baumgärtel and Christian von Borczyskowski

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982471

    7. In situ Raman growth monitoring of indium/copper phthalocyanine interfaces (pages 232–235)

      Philipp Schäfer, Cameliu Himcinschi, Vasile Chis and Dietrich R. T. Zahn

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982484

    8. Influence of dispersion interactions on the adsorption of PTCDA on Ag(110) (pages 236–239)

      Reinhard Scholz and Afshin Abbasi

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982500

    9. The role of a precursor state in thiophene chemisorption on Si(111)–7×7 (pages 240–243)

      A. J. Weymouth, R. H. Miwa, G. P. Srivastava and A. B. McLean

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982505

    10. Heterojunctions

      Stability of polar semiconductor heterostructures (pages 244–247)

      R. Leitsmann, F. Bechstedt, H. Groiss and F. Schäffler

      Version of Record online: 14 JAN 2010 | DOI: 10.1002/pssc.200982403

    11. Comparison of metal Schottky contacts on n-Ge (100) at different annealing temperatures (pages 248–251)

      A. Chawanda, C. Nyamhere, F. D Auret, W. Mtangi, M. Diale and J. M. Nel

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982404

    12. Interface properties and junction behavior of Pd contact on ZnO thin film grown by vacuum deposition technique (pages 252–255)

      Ghusoon M. Ali, A. D. D. Dwivedi, S. Singh and P. Chakrabarti

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982409

    13. ta-C/Si heterojunction diodes with apparently giant ideality factors (pages 256–259)

      Marc Brötzmann, Ulrich Vetter and Hans Hofsäss

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982415

    14. ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performance (pages 260–263)

      H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, E. Garfunkel and T. Gustafsson

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982425

    15. Heterointerface relief in the (311)A-oriented GaAs-AlAs superlattices (pages 272–275)

      Dmitry Gulyaev and Konstantin Zhuravlev

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982469

    16. Comprehensive model for interface recombination at a-Si:H/c-Si interfaces based on amphoteric defects (pages 276–279)

      S. Steingrube, D. S. Steingrube, R. Brendel and P. P. Altermatt

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982486

    17. Interaction induced transition in the nanoporous TiO2/Pd-porphyrin system (pages 280–283)

      Matías Funes, Philipp Zabel, Thomas Dittrich, Edgardo N. Durantini and Luis Otero

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982490

    18. Formation of an interface layer between Al1-xSixOy thin films and the Si substrate during rapid thermal annealing (pages 284–287)

      Paweł Piotr Michałowski, Volkhard Beyer, Malte Czernohorsky, Peter Kücher, Steffen Teichert, Gert Jaschke and Wolfhard Möller

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982491

    19. Improvement of sol-gel ZnO heterojunctions by hydrogen annealing (pages 288–291)

      Kazunori Abe, Takao Komiyama, Yasunori Chonan, Hiroyuki Yamaguchi and Takashi Aoyama

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982497

    20. High-k and oxide materials

      Structure and stability of cub-Pr2O3 films on Si(111) under post deposition annealing conditions (pages 292–295)

      S. Gevers, T. Weisemoeller, B. Zimmermann, C. Deiter and J. Wollschläger

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982406

    21. Optical characterisation of BiFeO3 epitaxial thin films grown by pulsed-laser deposition (pages 296–299)

      Cameliu Himcinschi, Ionela Vrejoiu, Marion Friedrich, Li Ding, Christoph Cobet, Norbert Esser, Marin Alexe and Dietrich R. T. Zahn

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982414

    22. Drift mobility of photocarriers on Zn- and O-polar surfaces of ZnO (pages 300–303)

      Hiroyuki Yamaguchi, Takao Komiyama, Yasunori Chonan, Yousuke Ishidsuka, Ryouta Ito and Takashi Aoyama

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982416

    23. Indium tin oxide on copper phthalocyanine – an ellipsometry study (pages 304–307)

      Marion Friedrich, Hartmut Kupfer and Dietrich R. T. Zahn

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982429

    24. Adsorption of benzene over the rutile TiO2 (110) surfaces: A theoretical study (pages 308–311)

      A. R. R. Neto and H. W. Leite Alves

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982434

    25. Optical investigation of CuPc thin films on vicinal Si(111) (pages 312–315)

      Li Ding, Cameliu Himcinschi, Marion Friedrich and Dietrich R. T Zahn

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982455

    26. Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics (pages 316–320)

      D. Müller-Sajak, A. Cosceev, C. Brand, K. R. Hofmann and H. Pfnür

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982477

    27. Charge transient spectroscopy measurements of metal-oxide-semiconductor (pages 321–325)

      Markus Arnold, Axel Fechner and Dietrich R. T. Zahn

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982483

    28. ZnO films deposited by optimized PLD technique with bias voltages (pages 326–329)

      Hiroyuki Yamaguchi, Tamae Shitara, Takao Komiyama, Yasunori Chonan and Takashi Aoyama

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982493

    29. Ab initio study of one-dimensional disorder on III-V semiconductor surfaces (pages 330–333)

      O. Romanyuk, F. Grosse and W. Braun

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982498

    30. Voigt effect measurement on PLD grown NiO thin films (pages 334–337)

      Camelia Scarlat, Kah Ming Mok, Shengqiang Zhou, Mykola Vinnichenko, Michael Lorenz, Marius Grundmann, Manfred Helm, Mathias Schubert and Heidemarie Schmidt

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982504

    31. Wide bandgap materials

      AlInGaN UV-C photodetectors with an insertion layer of high work function metal (pages 338–341)

      Han Cheng Lee, Yan Kuin Su, Jia Ching Lin, Chun Yuan Huang, Yi Cheng Cheng and Kuo Jen Chang

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982410

    32. Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy (pages 342–346)

      Atsushi Kawaharazuka, Tadashi Yoshizaki, Takato Hiratsuka and Yoshiji Horikoshi

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982421

    33. Computational study for growth of GaN on graphite as 3D growth on 2D material (pages 347–350)

      Akira Ishii, Takaaki Tatani, Hiroki Asano and Kengo Nakada

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982430

    34. Effect of nitrogen on the InAs/GaAs quantum dot formation (pages 355–358)

      L. Ivanova, H. Eisele, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, H. Riechert and M. Dähne

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982449

      Corrected by:

      Erratum: Erratum: Effect of nitrogen on the InAs/GaAs quantum dot formation

      Vol. 7, Issue 11-12, 2793, Version of Record online: 10 NOV 2010

    35. Structure determination of Pd-catalyst supported on S-terminated GaAs(001) using DFT calculation (pages 359–361)

      Akira Ishii, Hiroki Asano, Mami Yokoyama, Shiro Tsukamoto, Satoshi Shuto and Mitsuhiro Arisawa

      Version of Record online: 29 DEC 2009 | DOI: 10.1002/pssc.200982452

    36. Do we know the band gap of lithium niobate? (pages 362–365)

      C. Thierfelder, S. Sanna, Arno Schindlmayr and W. G. Schmidt

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982473

    37. Nanowires and nanotubes

    38. Vibrational modes in a square cross-section InAs/InP nanowire superlattice (pages 370–373)

      Seiji Mizuno and Yushi Nakamura

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982418

    39. Structural stability of clean GaAs nanowires grown along the [111] direction (pages 374–377)

      Rita Magri, Marcello Rosini and Flavio Casetta

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982431

    40. Interface bands in carbon nanotube superlattices (pages 382–385)

      W. Jaskólski, M. Pelc, H. Santos, L. Chico and A. Ayuela

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982487

    41. Quantum transport in narrow-gap semiconductor nanocolumns (pages 386–389)

      H. Lüth, Ch. Blömers, Th. Richter, J. Wensorra, S. Estevez Hernandez, G. Petersen, M. Lepsa, Th. Schäpers, M. Marso, M. Indlekofer, R. Calarco, N. Demarina and D. Grützmacher

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982506

    42. Graphene

      Top gated graphene transistors with different gate insulators (pages 390–393)

      Jörg Pezoldt, Christian Hummel, Antonia Hanisch, Ivan Hotovy, Magdalena Kadlecikova and Frank Schwierz

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982440

    43. HREELS study of graphene formed on hexagonal silicon carbide (pages 394–397)

      R. J. Koch, T. Haensel, S. I.-U. Ahmed, Th. Seyller and J. A. Schaefer

      Version of Record online: 8 DEC 2009 | DOI: 10.1002/pssc.200982481

    44. Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM (pages 398–401)

      Florian Speck, Markus Ostler, Jonas Röhrl, Konstantin V. Emtsev, Martin Hundhausen, Lothar Ley and Thomas Seyller

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982496

    45. Nanoparticles

      Optical studies of the evolution of the core/shell interface in CdSe- and CdS-based core/shell nanostructures with a narrow-gap shell (pages 402–406)

      Yu. M. Azhniuk, V. M. Dzhagan, O. E. Rayevska, S. Ya. Kuchmiy, M. Ya. Valakh and D. R. T. Zahn

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982422

    46. Annealing simulations to determine the matrix interface structure of SiC quantum dots embedded in SiO2 (pages 407–410)

      Jan M. Knaup, Márton Vörös, Peter Déak, Adam Gali, Thomas Frauenheim and Efthimios Kaxiras

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982428

    47. Platinum nanoparticles deposited on wide-bandgap semiconductor surfaces for catalytic applications (pages 411–414)

      Susanne Schäfer, Sonja A. Wyrzgol, Yizhen Wang, Johannes A. Lercher and Martin Stutzmann

      Version of Record online: 1 DEC 2009 | DOI: 10.1002/pssc.200982454

    48. Temperature dependent stability of self-assembled molecular rows (pages 415–417)

      S. Blankenburg and W. G. Schmidt

      Version of Record online: 1 DEC 2009 | DOI: 10.1002/pssc.200982460

    49. Dielectric functions of Si nanoparticles within a silicon nitride matrix (pages 418–422)

      A.-S. Keita, A. En Naciri, F. Delachat, M. Carrada, G. Ferblantier and A. Slaoui

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982461

    50. Structural and optical properties of CdS nanocrystals grown in water-soluble diblock copolymer (pages 423–426)

      M. Celalettin Baykul, Hilal Rüzgar, Emine Arman, Yasemin Baş and Vural Bütün

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982468

    51. Optical properties of ZnS:Mn nanocrystals (pages 427–431)

      F. Ahmed, A. En Naciri and J. J. Grob

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982476

    52. Devices

    53. Optimisation of surface passivation for highly reliable angular AMR sensors (pages 436–439)

      M. Isler, B. Christoffer, G. Schoer, B. Philippsen, M. Mahnke, F. Vanhelmont, R. Wolters, R. Engelen, A. Opran, A. Thorns, W. Riethmueller, H. Matz, C. Tobescu and P. Stolk

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982407

    54. The influence of poly-Si/SiGe gate in CMOS transistors for RF and microwave circuit applications (pages 440–443)

      H. G. Jimenez, L. T. Manera, M. F. Rautemberg, J. A. Diniz, I. Doi, P. J. Tatsch, H. E. Figueroa and J. W. Swart

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982424

    55. Surface exfoliation in ZnO by hydrogen implantation and its smoothening by high temperature annealing (pages 444–447)

      Trilok Singh, R. Scholz, S. H. Christiansen, U. Gösele and R. Singh

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982427

    56. Kelvin-probe studies of n-conductive organic field-effect transistors during operation (pages 452–455)

      Franziska Lüttich, Daniel Lehmann, Harald Graaf, Dietrich R. T. Zahn and Christian von Borczyskowski

      Version of Record online: 14 JAN 2010 | DOI: 10.1002/pssc.200982442

    57. Characterisation of organic field-effect transistors using metal phthalocyanines as active layers (pages 456–459)

      Iulia G. Korodi, Daniel Lehmann, Tossapol Tippo, Michael Hietschold and Dietrich R. T. Zahn

      Version of Record online: 2 NOV 2009 | DOI: 10.1002/pssc.200982458

    58. Electronic structure and effective masses in strained silicon (pages 460–463)

      Mohammed Bouhassoune and Arno Schindlmayr

      Version of Record online: 9 NOV 2009 | DOI: 10.1002/pssc.200982470

    59. Impedance spectroscopy of AlGaN/GaN HEMTs in contact with culture media (pages 464–467)

      Hartmut Witte, Michael Charpentier, Christian Warnke, Mathias Mueller, Kay-Michael Guenther, Armin Dadgar and Alois Krost

      Version of Record online: 1 DEC 2009 | DOI: 10.1002/pssc.200982478

    60. Photoluminescence and diode characteristic of ZnO thin films/junctions fabricated by pulsed laser deposition (PLD) technique (pages 468–471)

      Kazuhiro Sasaki, Takao Komiyama, Yasunori Chonan, Hiroyuki Yamaguchi and Takashi Aoyama

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssc.200982495

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