physica status solidi (c)

Cover image for Vol. 8 Issue 3

Special Issue: E-MRS 2010 Spring Meeting – Symposium I: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II • E-MRS 2010 Spring Meeting – Symposium J: Silicon-based Nanophotonics

March 2011

Volume 8, Issue 3

Pages 641–1096

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Cover Picture: Phys. Status Solidi C 3/2011

      Version of Record online: 11 MAR 2011 | DOI: 10.1002/pssc.201190006

      Thumbnail image of graphical abstract

      In their article on pp. 779ff., A. Fleurence and Y. Yamada-Takamura evidence by means of scanning tunneling microscopy that the formation of homogeneous ZrB2(0001) thin films is hindered by the nucleation of misoriented ZrB2 crystallites. The cover picture shows one of these parasitic structures. Its existence is unambiguously related to the formation of (1equation image00) facets, the stability of which is speculated to be originating in the (2 × 6) surface reconstruction we report here for the first time. Based on these experimental observations, they propose solutions to prevent the formation of these parasitic crystallites which will lead to better integration of III-nitrides with silicon.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Back Cover: Phys. Status Solidi C 3/2011

      Version of Record online: 11 MAR 2011 | DOI: 10.1002/pssc.201190007

      Thumbnail image of graphical abstract

      In their article on pp. 839ff., Yalin Lu and Kitt Reinhardt investigate the use of two nanostructure designs in solar cells, with the goal to enhance both light absorption and current density. The pictures show absorption in the solar spectrum using an embedded nanograting (top) and a through-grating nanostructures (bottom), over the Si layer thickness and the Si grating width, respectively. Both cases are under TM incidence.

      Prof. Yalin Lu's working fields include photonics, nanomaterials, energy materials, etc.

  3. Inside Front Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Inside Front Cover: Phys. Status Solidi C 3/2011

      Version of Record online: 11 MAR 2011 | DOI: 10.1002/pssc.201190008

      Thumbnail image of graphical abstract

      The research activities of the Micro–nano Biophotonics Group at the Centro Láser UPM are focused on the design, fabrication and characterization of sub micro patterned biophotonic sensing cells (BICELLs), characterized using vertical coupling techniques. In their work on pp. 1087, R. Casquel and coworkers develop a simplified theoretical method which allows the optimization of a SU-8 pillar based BICELL, previously fabricated and demonstrated as biosensor by using antiBSA/BSA immunoreaction. 3D FDTD calculations, experimental results and proposed model calculations are compared. The suitability of the method allows to obtain values for expected biodetection limits for a variety of geometrical configurations.

  4. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
  5. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
  6. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Preface – Symposium I: Phys. Status Solidi C 3/2011 (pages 653–654)

      G. Kissinger, S. Pizzini, H. Tu and H. Yamada-Kaneta

      Version of Record online: 11 MAR 2011 | DOI: 10.1002/pssc.201160108

  7. Obituary

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
  8. EMRS-I – Invited Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Point defects, impurities, defect complexes and compensation effects

  9. EMRS-I – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Point defects, impurities, defect complexes and compensation effects

    2. Dopant diffusivity and solubility in nickel silicides (pages 670–673)

      Ivan Blum, Alain Portavoce, Khalid Hoummada, Gamra Tellouche, Lee Chow, Dominique Mangelinck and Véronique Carron

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000283

    3. Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes (pages 674–677)

      Jiahe Chen, Jan Vanhellemont, Eddy Simoen, Johan Lauwaert, Henk Vrielinck, Joan Marc Rafi, Hidenori Ohyama, Jörg Weber and Deren Yang

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000142

      Corrected by:

      Erratum: Erratum: Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

      Vol. 8, Issue 4, 1428, Version of Record online: 5 APR 2011

    4. Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications (pages 678–681)

      Maxime Forster, Erwann Fourmond, Roland Einhaus, Hubert Lauvray, Jed Kraiem and Mustapha Lemiti

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000330

    5. Effects of uniaxial stress on local vibration of a platinum-hydrogen complex in silicon (pages 686–689)

      Y. Kamiura, K. Higaki, K. Katayama, H. Mizukawa, T. Ishiyama, Y. Yamashita and S. Abe

      Version of Record online: 15 NOV 2010 | DOI: 10.1002/pssc.201000118

    6. First-principles calculation on screw defects at Si(110)/(100) interface (pages 690–693)

      Hiroaki Kariyazaki, Tatsuhiko Aoki, Koji Izunome and Koji Sueoka

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000326

    7. Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties (pages 694–696)

      Daniel Kropman, Tiit Kärner, Sergei Dolgov, Ivo Heinmaa, Tõnu Laas and Charalampos A. Londos

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000269

    8. Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters (pages 697–700)

      J.G. Laven, H.-J. Schulze, V. Häublein, F.-J. Niedernostheide, H. Schulze, H. Ryssel and L. Frey

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000161

    9. IR studies of oxygen-related and carbon-related defects in Sn-doped silicon (pages 701–704)

      Charalampos A. Londos, Andreas Andrianakis, Dimitris Aliprantis, Efstratia N. Sgourou and Hidenori Ohyama

      Version of Record online: 15 NOV 2010 | DOI: 10.1002/pssc.201000105

    10. Hydrogen-related defects in boron doped p-type silicon (pages 705–708)

      H. Malmbekk, L. Vines, E. V. Monakhov and B. G. Svensson

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000260

    11. Local vibrational modes of the oxygen trimer in Si (pages 709–712)

      L. I. Murin, E. A. Tolkacheva, V. P. Markevich, A. R. Peaker, B. G. Svensson and J. L. Lindström

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000280

    12. Relationship between net doping density and resistivity of compensated mc-Si ingots (pages 713–716)

      Chiara Modanese, Marisa Di Sabatino, Anne-Karin Søiland and Lars Arnberg

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000210

    13. First-principles study on initial stage of oxidation on Si(110) surface (pages 717–720)

      Takahiro Nagasawa, Seiji Shiba and Koji Sueoka

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000325

    14. Lifetime and DLTS studies of interstitial Fe in p-type Si (pages 721–724)

      M. Syre, E. Monakov, A. Holt and B. G. Svensson

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000256

    15. Electrically active centers introduced in p-type Si by rapid thermal processing (pages 725–728)

      C. K. Tang, E. Lund, E. V. Monakhov, J. Mayandi, A. Holt and B. G. Svensson

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000263

    16. Hall mobility drops in disordered boron-doped Czochralski silicon compensated by thermal donors activation (pages 729–732)

      J. Veirman, S. Dubois, N. Enjalbert, J. P. Garandet, D. R. Heslinga and M. Lemiti

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000223

  10. EMRS-I – Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Gettering passivation and defect engineering

      Research on efficiency limiting defects and defect engineering in silicon solar cells - results of the German research cluster SolarFocus (pages 733–738)

      Stephan Riepe, Isolde E. Reis, Wolfram Kwapil, Marie Aylin Falkenberg, Jonas Schön, Herfried Behnken, Jan Bauer, Denise Kreßner-Kiel, Winfried Seifert and Wolfgang Koch

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000338

  11. EMRS-I – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Gettering passivation and defect engineering

      Structure of the near-surface layer of Cz Si wafers subjected to low-temperature low-energy ion-beam treatment (pages 739–742)

      Alexander Fedotov, Inna Ivashkevich, Svetlana Kobeleva, Olga Korolik, Alexander Mazanik, Nikola Stas'kov and Sergey Turishchev

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000331

    2. Phosphorous gettering in acidic textured multicrystalline solar cells (pages 743–746)

      A. Montesdeoca-Santana, E. Jiménez-Rodríguez, B. González-Díaz, B. Díaz-Herrera, M. Rinio, D. Borchert, C. Hernández-Rodríguez and R. Guerrero-Lemus

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000230

    3. A comparative study on different textured surfaces passivated with amorphous silicon (pages 747–750)

      A. Montesdeoca-Santana, J. Ziegler, S. Lindekugel, E. Jiménez-Rodríguez, S. Keipert-Colberg, S. Müller, C. Krause, D. Borchert and R. Guerrero-Lemus

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000234

    4. Gettering of iron in CZ-silicon by polysilicon layer (pages 751–754)

      A. Haarahiltunen, M. Yli-Koski, H. Talvitie, V. Vähänissi, J. Lindroos and H. Savin

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000194

    5. Improvement of solar cells performances by surface passivation using porous silicon chemically treated with LiBr solution (pages 755–758)

      Ikbel Haddadi, Wissem Dimassi, Rabaa Bousbih, Massoud Hajji, M. Ali Kanzari and Hatem Ezzaouia

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000287

    6. Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing (pages 759–762)

      Jasmin Hofstetter, Jean-François Lelièvre, David P. Fenning, Mariana I. Bertoni, Tonio Buonassisi, Antonio Luque and Carlos del Cañizo

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000334

    7. Comprehensive investigation of silicon surface passivation by a -Si:H and a -SiNx:H films (pages 763–766)

      Abdelazize Laades, Michael Blech, Mario Bähr, Kevin Lauer and Alexander Lawerenz

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000262

    8. Influence of precipitates on the kinetics of iron gettering from the Si wafers by the Al layers (pages 767–770)

      Andrey Sarikov, Victor Naseka and Vladimir Litovchenko

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000196

    9. Characterization techniques and advanced methods of defect diagnostics

      Growth rate model and doping metrology by atom probe tomography in silicon nanowire (pages 771–774)

      W. H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J. P. Nys, D. Stiévenard and P. Pareige

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000233

    10. Spatially resolved lifetime measurements of silicon heterojunctions from the modulated photoluminescence technique (pages 775–778)

      W. Favre, J.-P. Kleider, D. Muñoz, S. Martin-de-Nicolás and P.-J. Ribeyron

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000286

    11. Scanning tunneling microscopy investigations of the epitaxial growth of ZrB2 on Si(111) (pages 779–783)

      Antoine Fleurence and Yukiko Yamada-Takamura

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000282

    12. Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization and application to doping profiling (pages 784–787)

      Ahmed Gharbi, Boudjemaa Remaki, Aomar Halimaoui, Daniel Bensahel and Abdelkader Souifi

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000343

    13. Solar grade silicon, silicon thin films, amorphous silicon, silicon nanocrystals, nanowires and naonodots

      Role of carbon content in tuning the physical quantities of a-Si1-xCx:H alloys deposited by PECVD (pages 800–803)

      G. Ambrosone, D.K. Basa, U. Coscia, A. Le Donne and S. Binetti

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000257

    14. Stoichiometry of silicon-rich dielectrics for silicon nanocluster formation (pages 804–807)

      Jorge Barreto, Alfredo Morales, Mariano Perálvarez, Blas Garrido and Carlos Domínguez

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000363

    15. Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements (pages 808–811)

      Y. Sayad, D. Blanc, A. Kaminski, G. Bremond and M. Lemiti

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000216

    16. Confined growth of silicon nanowires as a possible process for third generation solar cells (pages 812–815)

      Denis Buttard, Ludovic Dupré, Thomas Bernardin, Marc Zelsmann, David Peyrade and Pascal Gentile

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000340

    17. Electrical characterisation of Si-SiO2 structures (pages 816–818)

      Ivana Capan, Branko Pivac and Robert Slunjski

      Version of Record online: 15 NOV 2010 | DOI: 10.1002/pssc.201000076

    18. Simulations of silicon nanocrystals embedded in oxide for nanoelectronic applications (pages 819–822)

      Dumitru Armeanu, Yann Leroy and Anne-Sophie Cordan

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000274

    19. Influence of rf power on the properties of nanostructured silicon-carbon films deposited by PECVD (pages 823–826)

      U. Coscia, G. Ambrosone, D.K. Basa, P. Rava, S. Ferrero, A. Virga and M. Tucci

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000299

    20. Electrical properties of polysilicon nanowires for device applications (pages 827–830)

      F. Demami, R. Rogel, A.-C. Salaün and L. Pichon

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000227

    21. Si and SiC nanocrystals in an amorphous SiC matrix: Formation and electrical properties (pages 831–834)

      Rena Gradmann, Philipp Loeper, Matthias Künle, Marcel Rothfelder, Stefan Janz, Martin Hermle and Stefan Glunz

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000176

    22. Carrier mobilities in multicrystalline silicon wafers made from UMG-Si (pages 835–838)

      Bianca Lim, Martin Wolf and Jan Schmidt

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000144

    23. Manipulation of absorption in Si thin films with ordered nanostructures (pages 839–842)

      Yalin Lu and Kitt Reinhardt

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000221

    24. Adding a thin metallic plasmonic layer to silicon thin film solar cells (pages 843–845)

      Yalin Lu, J. F. Sell, M. D. Johnson, K. Reinhardt and R. J. Knize

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000224

    25. High-rate deposition of nano-crystalline silicon thin films on plastics (pages 846–849)

      E. Marins, V. Guduru, M. Ribeiro, F. Cerqueira, A. Bouattour and P. Alpuim

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000288

    26. Variation in the structure and optical properties of polymorphous silicon thin films using dichlorosilane as silicon precursor (pages 850–853)

      A. Remolina, L. Hamui, B. M. Monroy, M. F. García-Sánchez, A. Ponce, M. Picquart and G. Santana

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000248

    27. Compensated silicon crystals by metallurgy route (pages 854–858)

      Kh. A. Abdullin, B. A. Beketov, G. N. Chumikov, B. N. Mukashev, M. F. Tamendarov, T. S. Turmagambetov, M. R. Page and D. M. Kline

      Version of Record online: 15 NOV 2010 | DOI: 10.1002/pssc.201000099

    28. Microstructural tuning of polycrystalline silicon films from hydrogen diluted amorphous silicon films by AIC (pages 859–862)

      P. Prathap, O. Tuzun, S. Roques, S. Schmitt, C. Maurice and A. Slaoui

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000369

    29. Analyses of the As doping of SiO2/Si/SiO2 nanostructures (pages 863–866)

      Francesco Ruffino, Mario Vincenzo Tomasello, Maria Miritello, Riccardo De Bastiani, Giuseppe Nicotra, Corrado Spinella and Maria Grazia Grimaldi

      Version of Record online: 15 NOV 2010 | DOI: 10.1002/pssc.201000044

  12. EMRS-I – Invited Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Devices, alternative growth and doping processes, modeling

      Si and Si-Ge wires for thermoelectrics (pages 867–870)

      Anatoly Druzhinin, Igor Ostrovskii, Iurii Kogut, Stepan Nichkalo and Taras Shkumbatyuk

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.200900266

    2. Material effects in manufacturing of silicon based solar cells and modules (pages 871–874)

      Anja Schieferdecker, Jens-Uwe Sachse, Torsten Mueller, Ulf Seidel, Lars Bartholomaeus, Sven Germershausen, Reinhold Perras, Rita Meissner, Helmut Hoebbel, Andreas Schenke, A. K. Bhatti, Karl Heinz Küsters and Hans Richter

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000279

  13. EMRS-I – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Devices, alternative growth and doping processes, modeling

      Temperature effect on an N-channel commercial VDMOSFET transistor (pages 875–878)

      Nadine Abboud, Chafic Salame, Yvan Cuminal, Alain Foucaran and Alain Hoffmann

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000121

    2. Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiNx:H/c -Si hetero-interfaces (pages 879–882)

      Heike Angermann, Frank Wünsch, Marinus Kunst, Abdelazize Laades, Uta Stürzebecher, Erhard Conrad, Lars Korte and Manfred Schmidt

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000236

    3. Reduction of absorption loss in multicrystalline silicon via combination of mechanical grooving and porous silicon (pages 883–886)

      Mohamed Ben Rabha, Seifeddine Belhadj Mohamed, Wissem Dimassi, Mounir Gaidi, Hatem Ezzaouia and Brahim Bessais

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000153

    4. Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving (pages 887–890)

      Mohamed Ben Rabha, Seifeddine Belhadj Mohamed, Wissem Dimassi, Mounir Gaidi, Hatem Ezzaouia and Brahim Bessais

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000250

    5. Atomic-layer-deposited Ir thin film as a novel diffusion barrier layer in Cu interconnection (pages 891–894)

      Yong Hwan Lim, Hana Yoo, Bum Ho Choi, Jong Ho Lee, Ho-Nyun Lee and Hong Kee Lee

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000199

    6. Stability against hydrogen plasma exposure of Al-doped zinc oxide thin film for a-Si thin film solar cell (pages 895–898)

      Hana Yoo, Yong Hwan Lim, Bum Ho Choi, Jong Ho Lee and Dong Chan Shin

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000213

    7. Dry texturing of mc-Si wafers (pages 903–906)

      Garima Agarwal, Simona De Iuliis, Luca Serenelli, Enrico Salza and Mario Tucci

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000270

    8. An analytical drain current model for undoped GSDG MOSFETs including interfacial hot-carrier effects (pages 907–910)

      Fayçal Djeffal, Toufik Bentrcia and Toufik Bendib

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000158

    9. Anomalous temperature behaviour of band to band electroluminescence in silicon solar cells (pages 911–914)

      A. Klossek, T. Arguirov, T. Mchedlidze and M. Kittler

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000206

    10. Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD) (pages 915–918)

      Thierry Kociniewski, Frédéric Fossard, Jean-Luc Perrossier, Dominique Débarre and Jacques Boulmer

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000345

    11. Integrated demultiplexer and photodetector for short range transmission in the visible range (pages 919–923)

      P. Louro, M. A. Vieira, S. Amaral, M. Fernandes, J. Costa and M. Vieira

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000169

    12. Chemical synthesis of silver nanoparticles for solar cell applications (pages 924–927)

      Jack Bonsak, Jeyanthinath Mayandi, Annett Thøgersen, Erik Stensrud Marstein and Umadevi Mahalingam

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000275

    13. Heterojunction solar cells on multi- crystalline silicon: surface treatments (pages 928–931)

      Mario Tucci, Luca Serenelli, Simona De Iuliis, Massimo Izzi, Caterina Summonte, Marica Canino, Marco Allegrezza, Marta Rosa, Giampiero De Cesare and Domenico Caputo

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000258

    14. Back contact formation for p-type based a-Si:H/c-Si heterojunction solar cells (pages 932–935)

      Mario Tucci, Luca Serenelli, Simona De Iuliis, Massimo Izzi, Giampiero De Cesare and Domenico Caputo

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000259

    15. Implantation and irradiation defects

      FEM for modelling 193 nm excimer laser treatment of SiO2/Si/Si(1-x)Gex heterostructures on SOI substrates (pages 936–939)

      J. C. Conde, E. Martín, S. Chiussi, F. Gontad and P. González

      Version of Record online: 22 DEC 2010 | DOI: 10.1002/pssc.201000376

    16. Dopant activation and damage evolution in implanted silicon after excimer laser annealing (pages 940–943)

      G. Fisicaro, M. Italia, V. Privitera, G. Piccitto, K. Huet, J. Venturini and A. La Magna

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000252

    17. Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation (pages 944–947)

      Maik Häberlen, Brian Murphy, Bernd Stritzker and Jörg K. N. Lindner

      Version of Record online: 20 JAN 2011 | DOI: 10.1002/pssc.201000342

    18. Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation (pages 948–951)

      Volodymyr Komarnitskyy, Pavel Hazdra and Vilma Buršíková

      Version of Record online: 13 JAN 2011 | DOI: 10.1002/pssc.201000301

    19. Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition (pages 952–955)

      M. Myronov, V. A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen, D. R. Leadley and E. H. C. Parker

      Version of Record online: 17 DEC 2010 | DOI: 10.1002/pssc.201000255

    20. Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy (pages 956–959)

      David Schindele, Peter Pichler, Jürgen Lorenz, Peter Oesterlin and Heiner Ryssel

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000166

    21. The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing (pages 960–963)

      Matthias Voelskow, Ioannis Stoimenos, Lars Rebohle and Wolfgang Skorupa

      Version of Record online: 23 NOV 2010 | DOI: 10.1002/pssc.201000159

  14. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Preface – Symposium J: Phys. Status Solidi C 3/2011 (pages 967–968)

      Jan Valenta, Dmitry Kovalev, Tom Gregorkiewicz and Jürgen Michel

      Version of Record online: 11 MAR 2011 | DOI: 10.1002/pssc.201160109

  15. EMRS-J – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Nonlinear optical properties of Si nanocrystals

      Comparative study of the nonlinear optical properties of Si nanocrystals fabricated by e-beam evaporation, PECVD or LPCVD (pages 969–973)

      A. Martinez, S. Hernändez, P. Pellegrino, O. Jambois, P. Miska, M. Grün, H. Rinnert, M. Vergnat, V. Izquierdo-Roca, J. M. Fedeli and B. Garrido

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000420

    2. Radiative and non-radiative recombination in Si-based materials

      On the role of non-bridging oxygen centers in the red luminescence emission from silicon nanocrystals (pages 974–978)

      Elisabetta Borsella, Rosaria D'Amato, Fabio Fabbri, Mauro Falconieri, Enrico Trave, Valentina Bello, Giovanni Mattei, Yaru Nie and Dayang Wang

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000553

    3. Ultrafast photoluminescence dynamics of blue-emitting silicon nanostructures (pages 979–984)

      K. Židek, F. Trojánek, P. Malý, I. Pelant, P. Gilliot and B. Hönerlage

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000394

    4. Theory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals (pages 985–990)

      A. N. Poddubny, A. S. Moskalenko, A. A. Prokofiev, S. V. Goupalov and I. N. Yassievich

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000407

    5. Structures responsible for radiative and non-radiative recombination activity of dislocations in silicon (pages 991–995)

      Teimuraz Mchedlidze, Tzanimir Arguirov, Oleg Kononchuk, Maxim Trushin and Martin Kittler

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000367

    6. Optical properties of silicon rich oxides (pages 996–1001)

      C. Summonte, E. Centurioni, M. Canino, M. Allegrezza, A. Desalvo, A. Terrasi, S. Mirabella, S. Di Marco, M.A. Di Stefano, M. Miritello, R. Lo Savio, F. Simone and R. Agosta

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000413

    7. Optical properties and size/shape dependence of α-Sn nanocrystals by tight binding (pages 1002–1005)

      Rasmus Vincentz S. Jensen, Thomas Garm Pedersen and Kjeld Pedersen

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000397

    8. Silicon nanowires and nanorods

      Temperature and directional dependences of the infrared dielectric function of free standing silicon nanowire (pages 1006–1011)

      M. Kazan, A. Bruyant, Z. Sedaghat, L. Arnaud, S. Blaize and P. Royer

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000377

    9. Scanning confocal Raman spectroscopy of silicon phase distribution in individual Si nanowires (pages 1012–1016)

      Andrii Nikolenko, Victor Strelchuk, Alla Klimovskaya, Peter Lytvyn, Mikhail Valakh, Yuriy Pedchenko, Andrii Voroschenko and Djamila Hourlier

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000409

    10. Black luminescent silicon (pages 1021–1026)

      Jörg Pezoldt, Thomas Kups, Mike Stubenrauch and Michael Fischer

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000388

    11. Er-doped nanostructures

      Effects of the thickness on the properties of erbium-doped silicon-rich silicon oxide thin films (pages 1027–1032)

      Sébastien Cueff, Christophe Labbé, Julien Cardin, Khalil Hijazi, Jean-Louis Doualan, Olivier Jambois, Blas Garrido and Richard Rizk

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000390

    12. Excitation of erbium ions in SiO2 with Si nanocrystals via virtual Auger process (pages 1033–1037)

      A. A. Prokofiev, A. S. Moskalenko, A. N. Poddubny and I. N. Yassievich

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000411

    13. On the role of heterolayer relaxation in luminescence response of Si/SiGe:Er structures (pages 1044–1048)

      Ludmila Krasilnikova, Margarita Stepikhova, Yurij Drozdov, Vadim Chalkov, Vladimir Shengurov and Zakharii Krasilnik

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000392

  16. EMRS-J – Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Silicon–germanium nanostructures

      Auger recombination in Si1-xGex/Si quantum wells under high-density photoexcitation (pages 1049–1054)

      Takeshi Tayagaki, Susumu Fukatsu and Yoshihiko Kanemitsu

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000382

  17. EMRS-J – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Inside Front Cover
    5. Issue Information
    6. Contents
    7. Preface
    8. Obituary
    9. EMRS-I – Invited Articles
    10. EMRS-I – Contributed Articles
    11. EMRS-I – Invited Article
    12. EMRS-I – Contributed Articles
    13. EMRS-I – Invited Articles
    14. EMRS-I – Contributed Articles
    15. Preface
    16. EMRS-J – Contributed Articles
    17. EMRS-J – Invited Article
    18. EMRS-J – Contributed Articles
    1. Silicon–germanium nanostructures

      Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers (pages 1055–1059)

      Mikhail Shaleev, Alexey Novikov, Nataliya Baydakova, Artem Yablonskiy, Oleg Kuznetsov, Yuriy Drozdov, Dmitriy Lobanov and Zakhary Krasilnik

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000404

    2. Photonic structures: Microcavities, photonic crystals and waveguides

      Optically active substoichiometric Si3N4 μ-cavities (pages 1060–1065)

      Federico Ferrarese Lupi, Daniel Navarro-Urrios, Josep Monserrat, Carlos Dominguez, Paolo Pellegrino and Blas Garrido

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000399

    3. Photonic stop bands of two-dimensional quasi-random structures based on macroporous silicon (pages 1066–1070)

      Mohammad Mahbubur Rahman, Josep Ferré-Borrull, Josep Pallarès and Lluis F. Marsal

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000415

    4. Garnet photonics toward developing laser diode integrated with optical isolator with Si guiding layer (pages 1071–1074)

      Hideki Yokoi, Shun Igarashi, Yuki Uchiumi and Kazuya Tani

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000308

    5. Tunable waveguides based on liquid crystal-infiltrated silicon photonic crystals (pages 1075–1078)

      Joaquín Cos, Josep Ferré-Borrull, Josep Pallarès and Lluís F. Marsal

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000414

    6. Si nanostructures for light detection and sensing

      Photo-sensing devices using a-Si based materials (pages 1079–1082)

      Manuela Vieira, Miguel Fernandes, Paula Louro, Alessandro Fantoni, Manuel A. Vieira, João Costa and Manuel Barata

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000183

    7. Light-triggered silicon-carbon pi'npin devices with self amplification (pages 1083–1086)

      M. A. Vieira, M. Vieira, P. Louro, J. Costa, A. Fantoni and M. Fernandes

      Version of Record online: 25 JAN 2011 | DOI: 10.1002/pssc.201000184

    8. Optimization of a label-free biosensor vertically characterized based on a periodic lattice of high aspect ratio SU-8 nano-pillars with a simplified 2D theoretical model (pages 1087–1092)

      R. Casquel, M. Holgado, F. J. Sanza, M. F. Laguna, C. A. Barrios, D. López-Romero, F. J. Ortega, M. J. Bañuls, R. Puchades and A. Maquieira

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000412

    9. Nanocrystalline silicon in biological studies (pages 1093–1096)

      Anna Fucikova, Jan Valenta, Ivan Pelant, Katerina Kusova and Vitezslav Brezina

      Version of Record online: 1 FEB 2011 | DOI: 10.1002/pssc.201000547

SEARCH

SEARCH BY CITATION