physica status solidi (c)

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Special Issue: E-MRS 2012 Spring Meeting – Symposium A, see further papers in Phys. Status Solidi A 209, No. 10 (2012).

October 2012

Volume 9, Issue 10-11

Pages 1857–2210

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      Cover Picture: Phys. Status Solidi C 10–11/2012

      Version of Record online: 22 OCT 2012 | DOI: 10.1002/pssc.201290017

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      Nanostructured silicon is considered as promising material system for nanophotonic and photovoltaic applications. One of the main challenges is the development of low-cost fabrication processes suitable for the mass production of high-quality nanopatterned devices on industrial scale. On pp. 2079–2082, Becker et al. present a bottom-up fabrication procedure for large-area (50 cm2) 2D periodic silicon nano- and microstructures relying on self-organized solid phase crystallization of silicon films that have been directionally deposited on nanoimprinted glass substrates by electron-beam evaporation. All these processing steps are compatible with high throughput requirements in industry. With lattice constants in the range from 350 nm to 2 μm these nanostructures can be tailored for low-cost advanced photonic and photovoltaic applications. Thus, in the first case photonic band structure effects at near infrared wavelengths have been identified by angular resolved reflection measurements in hexagonal 350 nm periodically patterned silicon films, while meeting the second type of application light path enhancement factors about 19 at a wavelength of 900 nm have been received on 2 μm periodic materials.

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      Back Cover: Phys. Status Solidi C 10–11/2012

      Version of Record online: 22 OCT 2012 | DOI: 10.1002/pssc.201290018

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      The cover page of Zirkelbach et al. (pp. 1968–1973) shows an initial C–Si [001] dumbbell configuration in bulk Si (top left) changing into a Si–Si [110] split interstitial configuration located next to a lattice site that is substitutionally occupied by a C atom (bottom right). First-principles total energy calculations describing the energetics of this transition (bottom left) reveal a diffusion barrier of no more than 0.8 eV for the deviation out of the ground-state configuration. And indeed, in large systems consisting of 6000 carbon atoms incorporated into a silicon host of a quarter of a million of atoms, these transitions can be observed with increasing temperature, as can be seen within the shaded regions of the radial distribution function of Si–C bonds (top right) obtained by large-scale empirical potential molecular dynamics simulations. These results suggest an important role of substitutionally incorporated carbon in the silicon carbide precipitation process at elevated temperatures or far from equilibrium.

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  4. Contents

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  5. Preface

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      Preface: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications (pages 1865–1867)

      G. Kissinger, S. Pizzini, H. Yamada-Kaneta and Junyong Kang

      Version of Record online: 22 OCT 2012 | DOI: 10.1002/pssc.201260149

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    1. Silicon nanocrystals and nanowires

      Growth and characterization of silicon nanocrystallites embedded in amorphous silicon carbon matrix by PECVD (pages 1869–1872)

      U. Coscia, G. Ambrosone, D. K. Basa, V. Rigato, M. Ballarini, A. Virga, S. Ferrero and L. V. Mercaldo

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200190

    2. Hierarchical nano/microstructures on silicon surface with ultra low reflectance for photovoltaic applications (pages 1873–1877)

      L. T. Tan, A. H. Lim, Z. Y. Chee, Y. L. Wong, Y. C. Huang, H. W. Ong, Q. X. Wee, J. W. Ho, Rob Steeman and S. J. Chua

      Version of Record online: 6 AUG 2012 | DOI: 10.1002/pssc.201200030

    3. Silicon nanostructures in silicon oxynitride for PV application: effect of argon (pages 1878–1883)

      Fabien Ehrhardt, Gérald Ferblantier, Corinne Ulhaq-Bouillet, Dominique Muller and Abdelilah Slaoui

      Version of Record online: 11 SEP 2012 | DOI: 10.1002/pssc.201200211

    4. Photoluminescence properties of carbon-doped β-FeSi2 nanocrystals (pages 1884–1887)

      Yoshihito Maeda, Kentaro Nishimura, Takahito Nakajima, Bui Matsukura, Kazumasa Narumi and Seiji Sakai

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200058

    5. Enhancement of IR light emission from β-FeSi2 nanocrystals embedded in Si (pages 1888–1891)

      Yoshihito Maeda, Kentaro Nishimura, Takahito Nakajima, Bui Matsukura, Kazumasa Narumi and Seiji Sakai

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200072

    6. Structural and chemical characterization of nanocrystalline and amorphous hydrogenated Si films (pages 1892–1895)

      Cristina Garozzo, Rosaria Anna Puglisi and Salvatore Lombardo

      Version of Record online: 11 SEP 2012 | DOI: 10.1002/pssc.201200352

    7. Porosity dependence of positive magnetoconductance in n-type porous silicon (pages 1896–1899)

      Bassem Chouaibi, Moufid Radaoui, Amel Benfredj, Samir Romdhane, Mongi Bouaïcha and Habib Bouchriha

      Version of Record online: 11 SEP 2012 | DOI: 10.1002/pssc.201200346

    8. A new route for fabrication of silicon QDs in a dielectric matrix of silica and silicate (pages 1900–1903)

      Anna Castaldo, Maria Luisa Addonizio, Alessandro Antonaia and Giuseppe Nicotra

      Version of Record online: 7 SEP 2012 | DOI: 10.1002/pssc.201200077

    9. Size-dependent structural properties of quasi-one-dimensional silicon clusters (pages 1904–1907)

      F. T. Umarova, A. B. Normurodov and N. N. Turaeva

      Version of Record online: 6 AUG 2012 | DOI: 10.1002/pssc.201200228

    10. Phosphorous doping of superlattice silicon quantum dots in silicon dioxide (pages 1908–1911)

      Brian J. Simonds, Ivan Perez-Würfl, Yong-Heng So, Alan S. Wan, Sarah McMurray and P. Craig Taylor

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200241

    11. Investigation of Si nanowires from VLS growth (pages 1912–1915)

      Ulrich Herr, Benjamin Riedmueller, Mike Haddad, Khaleel AbuShgair, Manfred Madel, Julian Benjamin Jakob and Klaus Thonke

      Version of Record online: 6 AUG 2012 | DOI: 10.1002/pssc.201200237

    12. Strain distribution in GaAs/Si quantum wires (pages 1916–1919)

      Tamar Tchelidze and Anton Davydok

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200336

    13. Diagnostic techniques

      In-situ measurement of thickness-dependent Pendellösung oscillations from a precipitation process in silicon at 650 °C (pages 1920–1923)

      Johannes Will, Alexander Gröschel, Christoph Bergmann and Andreas Magerl

      Version of Record online: 25 JUL 2012 | DOI: 10.1002/pssc.201200064

    14. Study of Sn migration during relaxation of Ge1-xSnx layers using atom probe tomography (pages 1924–1930)

      Arul Kumar, Federica Gencarelli, Ajay Kumar Kambham, Matthieu Gilbert, Benjamin Vincent and Wilfried Vandervorst

      Version of Record online: 14 SEP 2012 | DOI: 10.1002/pssc.201200222

    15. Infrared measurement and irradiation of ultra low carbon concentration silicon crystal (pages 1931–1936)

      Naohisa Inoue, Yasunori Goto, Hirofumi Seki, Kaori Watanabe, Hidenori Oyama and Yuichi Kawamura

      Version of Record online: 13 AUG 2012 | DOI: 10.1002/pssc.201200080

    16. Gettering of metal impurities

      Gettering effect in grain boundaries of multi-crystalline silicon (pages 1937–1941)

      H. Nouri, M. Bouaïcha, M. Ben Rabha and B. Bessaïs

      Version of Record online: 14 SEP 2012 | DOI: 10.1002/pssc.201200193

    17. Effect of metal contamination on recombination properties of extended defects in multicrystalline Si (pages 1942–1946)

      O. V. Feklisova, X. Yu, D. Yang and E. B. Yakimov

      Version of Record online: 13 AUG 2012 | DOI: 10.1002/pssc.201200138

    18. Modeling and ab-initio calculations

    19. Ab initio modelling of boron related defects in amorphous silicon (pages 1952–1954)

      Tiago A. Oliveira and Vítor J.B. Torres

      Version of Record online: 7 SEP 2012 | DOI: 10.1002/pssc.201200256

    20. Kinetic Monte Carlo simulation of the epitaxial growth of Si(100) (pages 1955–1962)

      Vivien Günther, Fabian Mauß, Christian Klauer and Christiane Schlawitschek

      Version of Record online: 11 SEP 2012 | DOI: 10.1002/pssc.201200340

    21. Modelling of photo- and electroluminescence of hydrogenated microcrystalline silicon solar cells (pages 1963–1967)

      Thomas C. M. Müller, Bart E. Pieters, Thomas Kirchartz, Reinhard Carius and Uwe Rau

      Version of Record online: 11 SEP 2012 | DOI: 10.1002/pssc.201200428

    22. First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon (pages 1968–1973)

      F. Zirkelbach, B. Stritzker, K. Nordlund, W. G. Schmidt, E. Rauls and J. K. N. Lindner

      Version of Record online: 11 SEP 2012 | DOI: 10.1002/pssc.201200198

    23. Scattering tensors and optical transitions in Si and Ge (pages 1974–1977)

      H. W. Kunert, A. G. J. Machatine, P. Niyongabo, M. Govender and B. W. Mwakikunga

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200068

    24. Clebsch-Gordan coefficients for scattering processes in Si and Ge (pages 1978–1980)

      H. W. Kunert, A. G. J. Machatine, P. Niyongabo, M. Govender and B. W. Mwakikunga

      Version of Record online: 25 JUL 2012 | DOI: 10.1002/pssc.201200097

    25. Point defects and extended defects

      Effects of germanium doping on the boron-oxygen complex formation in silicon solar cells (pages 1981–1986)

      Florent Tanay, Sébastien Dubois, Nicolas Enjalbert, Jordi Veirman, Pierre Gidon and Isabelle Périchaud

      Version of Record online: 19 SEP 2012 | DOI: 10.1002/pssc.201200230

    26. Vacancy out-diffusion in nitrogen-doped silicon (pages 1987–1991)

      Vladimir Voronkov and Robert Falster

      Version of Record online: 25 JUL 2012 | DOI: 10.1002/pssc.201200036

    27. Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon (pages 1992–1995)

      C. K. Tang, L. Vines, B. G. Svensson and E. V. Monakhov

      Version of Record online: 6 AUG 2012 | DOI: 10.1002/pssc.201200163

    28. A re-examination of the interstitial Ti levels in Si (pages 1996–1999)

      Vladimir Kolkovsky, Leopold Scheffler and Joerg Weber

      Version of Record online: 13 AUG 2012 | DOI: 10.1002/pssc.201200141

    29. Electrical activity of multivacancy defects in silicon (pages 2000–2004)

      P. Santos, J. Coutinho, M. J. Rayson and P. R. Briddon

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200063

    30. Defect generation by argon implantation: microscopy characterization and electrical properties (pages 2005–2008)

      Isabella Mica, Maria Luisa Polignano, Davide Codegoni, Aurelio Mauri and Valter Soncini

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200074

    31. Defects in p-type Cz-silicon irradiated at elevated temperatures (pages 2009–2012)

      Naveengoud Ganagona, Bahman Raeissi, Lasse Vines, Edouard V. Monakhov and Bengt G. Svensson

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200217

    32. Assessing the role of iron-acceptor pairs in solar grade multicrystalline silicon wafers from the metallurgical route (pages 2017–2022)

      Espen Hvidsten Dahl, Viktor Osinniy, Kenneth Friestad, Anne-Karin Søiland, Yakov Safir, Wolgang Skorupa, Ragnar Tronstad and Arne Nylandsted Larsen

      Version of Record online: 19 SEP 2012 | DOI: 10.1002/pssc.201200258

    33. Fracture in (100)Si after high energy protons implantation (pages 2023–2026)

      Carole Braley, Frédéric Mazen, Anne-Marie Papon, Anne-Marie Charvet, François Rieutord and Esidor Ntsoenzok

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200466

    34. SiGe layers in silicon device technology

      Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method (pages 2027–2030)

      Cheng Li, Shihao Huang, Weifang Lu, Jianfang Xu, Wei Huang, Zhijun Sun, Hongkai Lai and Songyan Chen

      Version of Record online: 25 JUL 2012 | DOI: 10.1002/pssc.201200038

    35. Epitaxial Si, SiGe and Ge on binary and ternary rare earth oxide buffers (pages 2031–2035)

      Rytis Dargis, Erdem F. Arkun, Radek Roucka, Robin Smith, David Williams, Andrew Clark and Michael Lebby

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200255

    36. Electronic device technology

    37. Precise millisecond annealing for advanced material processing (pages 2045–2049)

      Denise Reichel and Wolfgang Skorupa

      Version of Record online: 19 SEP 2012 | DOI: 10.1002/pssc.201200277

    38. Preparation of large step-free mesas on Si(111) by molecular beam epitaxy (pages 2050–2053)

      Andreas Fissel, Jan Krügener and H. Jörg Osten

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200139

    39. Optical nonlinearity in tandem Si-C photodetectors (pages 2054–2057)

      P. Louro, M. Vieira and M. A. Vieira

      Version of Record online: 13 AUG 2012 | DOI: 10.1002/pssc.201200210

    40. Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices (pages 2058–2061)

      Isao Tsunoda, Toshiyuki Nakashima, Nobuyuki Naka, Tatsuya Idemoto, Masashi Yoneoka, Kenichiro Takakura, Kenji Yoshino, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys and Hidenori Ohyama

      Version of Record online: 25 JUL 2012 | DOI: 10.1002/pssc.201200076

  7. Invited Article

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    9. Contributed Articles
    1. Solar cell technology

  8. Contributed Articles

    1. Top of page
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    9. Contributed Articles
    1. Solar cell technology

      You have full text access to this OnlineOpen article
      Retracted: Poly(3-hexylthiophene) films by electrospray deposition for crystalline silicon/organic hybrid junction solar cells (pages 2071–2074)

      Taiga Hiate, Naoto Miyauchi, Zeguo Tang, Ryo Ishikawa, Keiji Ueno and Hajime Shirai

      Version of Record online: 25 JUL 2012 | DOI: 10.1002/pssc.201200129

      Corrected by:

      Contributed Article: Retraction: Poly(3-hexylthiophene) films by electrospray deposition for crystalline silicon/organic hybrid junction solar cells

      Vol. 12, Issue 8, 1191, Version of Record online: 7 JUL 2015

    2. You have full text access to this OnlineOpen article
      Optical properties and carrier transport in c-Si/conductive PEDOT:PSS(GO) composite heterojunctions (pages 2075–2078)

      Zeguo Tang, Qiming Liu, Ishwor Khatri, Ryo Ishikawa, Keiji Ueno and Hajime Shirai

      Version of Record online: 6 AUG 2012 | DOI: 10.1002/pssc.201200130

    3. Direct growth of periodic silicon nanostructures on imprinted glass for photovoltaic and photonic applications (pages 2079–2082)

      Christiane Becker, Veit Preidel, Tobias Sontheimer, Carola Klimm, Eveline Rudigier-Voigt, Matthias Bockmeyer and Bernd Rech

      Version of Record online: 6 AUG 2012 | DOI: 10.1002/pssc.201200158

    4. Recombination process in solar cells: Impact on the carrier transport (pages 2083–2087)

      Yuri G. Gurevich and Jesus E. Velázquez-Pérez

      Version of Record online: 13 AUG 2012 | DOI: 10.1002/pssc.201200170

    5. Multicrystalline silicon solar cells from RST ribbon process (pages 2092–2096)

      Fabrice De Moro, Alexandru Focsa, Karim Derbouz, Abdelilah Slaoui, Nicolas Auriac, Hélène Lignier and Philipp Keller

      Version of Record online: 7 SEP 2012 | DOI: 10.1002/pssc.201200087

    6. Efficient crystalline Si/organic hybrid heterojunction solar cells (pages 2101–2106)

      Qiming Liu, Ishwor Khatri, Ryo Ishikawa, Keiji Ueno and Hajime Shirai

      Version of Record online: 14 SEP 2012 | DOI: 10.1002/pssc.201200131

    7. Defect engineering during the contact co-firing step in an industrial belt furnace (pages 2107–2110)

      Ana Peral, Jean François Lelièvre, Federico Recart and Carlos del Cañizo

      Version of Record online: 7 SEP 2012 | DOI: 10.1002/pssc.201200166

    8. Double side multicrystalline silicon passivation by one step stain etching-based porous silicon (pages 2111–2115)

      Seifeddine Belhadj Mohamed, Mohamed Ben Rabha and Brahim Bessais

      Version of Record online: 7 SEP 2012 | DOI: 10.1002/pssc.201200206

    9. Non-destructive characterization of saw damage in silicon photovoltaics substrates by means of photomodulated optical reflectance (pages 2116–2119)

      J. Bogdanowicz, P. W. Mertens, E. Cornagliotti, K. Wostyn, J. Penaud, P. Jaffrennou, E. Abric and W. Vandervorst

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200236

    10. On the impact of interfacial SiOx-layer on the passivation properties of PECVD synthesized aluminum oxide (pages 2120–2123)

      Abdelazize Laades, Hans-Peter Sperlich, Mario Bähr, Uta Stürzebecher, Carlos A. Diaz Alvarez, Markus Burkhardt, Heike Angermann, Michael Blech and Alexander Lawerenz

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200244

    11. Detailed investigation of the structural and passivation properties of silicon oxynitrides for silicon solar cells (pages 2124–2127)

      Abdelazize Laades, Markus Burkhardt, Maurizio Roczen, Carola Klimm, Michael Blech and Alexander Lawerenz

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200245

    12. Phosphorous diffusion through silicon nitride thin film for selective emitter application (pages 2131–2133)

      Laurent Crampette, Gilles Poulain, Yvan Cuminal, Alain Foucaran, Yvon Pellegrin and Bachir Semmache

      Version of Record online: 14 SEP 2012 | DOI: 10.1002/pssc.201200229

    13. Chemical mist deposition of graphene oxide and PEDOT:PSS films for crystalline Si/organic heterojunction solar cells (pages 2134–2137)

      Ishwor Khatri, Takashi Imamura, Akira Uehara, Ryo Ishikawa, Keiji Ueno and Hajime Shirai

      Version of Record online: 14 SEP 2012 | DOI: 10.1002/pssc.201200132

    14. Formation of shallow front emitters for solar cells by rapid thermal processing (pages 2138–2140)

      Hans B. Normann, Bengt G. Svensson and Edouard Monakhov

      Version of Record online: 19 SEP 2012 | DOI: 10.1002/pssc.201200202

    15. Influence of porous silicon passivation layer and TiO2 coating on the optoelectronic properties of multicrystalline Si substrate (pages 2141–2144)

      N. Janene, A. Hajjaji, M. Ben Rabha, M. A. El Khakani, B. Bessais and M. Gaidi

      Version of Record online: 19 SEP 2012 | DOI: 10.1002/pssc.201200234

    16. An improved silicon-oxide-based intermediate-reflector for micromorph solar cells (pages 2145–2148)

      Simon Kirner, Sonya Calnan, Onno Gabriel, Sebastian Neubert, Matthias Zelt, Bernd Stannowski, Bernd Rech and Rutger Schlatmann

      Version of Record online: 25 SEP 2012 | DOI: 10.1002/pssc.201200243

    17. New advances in metallurgical solar grade silicon based on recent Norwegian research activities (pages 2149–2157)

      Eivind Øvrelid, Merete Tangstad, Gabriella Tranell, Otto Lohne and Bruno Ceccaroli

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200275

    18. Electrical and optical characterization of extended defects in silicon mono-cast material (pages 2158–2163)

      B. Moralejo, A. Tejero, V. Hortelano, O. Martínez, J. Jiménez and V. Parra

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200248

    19. Exploring polysilicon deposition conditions through a laboratory CVD prototype (pages 2164–2168)

      Alba Ramos, Carlos del Cañizo, Javier Valdehita, Juan Carlos Zamorano, Araceli Rodríguez and Antonio Luque

      Version of Record online: 7 SEP 2012 | DOI: 10.1002/pssc.201200161

    20. Thin films

      The effect of ultrasound on the Si-SiO2 system (pages 2173–2176)

      Daniel Kropman and S. Dolgov

      Version of Record online: 13 AUG 2012 | DOI: 10.1002/pssc.201200186

    21. Structural and optical properties of crystalline silicon thin films deposited on porous alumina (pages 2177–2179)

      S. Ktifa, M. Ghrib, F. Saadallah and N. Yacoubi

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200044

    22. Local structural phase determination of Ni silicide thin films using EXAFS (pages 2184–2188)

      M. A. Sahiner, P. Y. Hung, W.-Y. Loh, P. S. Lysaght, J. C. Woicik and D. Guerrero

      Version of Record online: 27 AUG 2012 | DOI: 10.1002/pssc.201200250

    23. The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride (pages 2189–2193)

      Rabaa Bousbih, Wissem Dimassi, Ikbel Haddadi and Hatem Ezzaouia

      Version of Record online: 25 SEP 2012 | DOI: 10.1002/pssc.201200344

    24. Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen (pages 2194–2197)

      Moustafa Y. Ghannam, Yaser Abdul Raheem, Abdul Azeez Alomar and Jef Poortmans

      Version of Record online: 19 SEP 2012 | DOI: 10.1002/pssc.201200181

    25. Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition (pages 2198–2202)

      A. de Calheiros Velozo, G. Lavareda, C. Nunes de Carvalho and A. Amaral

      Version of Record online: 14 SEP 2012 | DOI: 10.1002/pssc.201200194

    26. Mechanical stress in silicon oxides grown on hydrogen implanted Si (pages 2203–2206)

      Sashka Alexandrova, Anna Szekeres and Evgenia Valcheva

      Version of Record online: 19 SEP 2012 | DOI: 10.1002/pssc.201200235

    27. Fabrication and photoluminescence properties of Tb-doped nitrogen-rich silicon nitride films (pages 2207–2210)

      Y.-T. An, C. Labbé, M. Morales, P. Marie and F. Gourbilleau

      Version of Record online: 13 AUG 2012 | DOI: 10.1002/pssc.201200253

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