physica status solidi (c)

Cover image for Vol. 9 Issue 2

Special Issue: 38th International Symposium on Compound Semiconductors (ISCS 2011)

February 2012

Volume 9, Issue 2

Pages 137–410

Issue edited by: Martin Walther

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. You have free access to this content
      Cover Picture: Phys. Status Solidi C 2/2012

      Version of Record online: 23 JAN 2012 | DOI: 10.1002/pssc.201290000

      Thumbnail image of graphical abstract

      In their article on pp. 282 Naokatsu Yamamoto et al. describe the characteristics of a wavelength tunable quantum dot optical frequency comb laser (QD-CML) as a newly proposed attractive photonic device. The generation of multiple-wavelength fine peaks in the 1.3-μm waveband with wide wavelength tunability and power controllability is successfully demonstrated for the QD-CML integrated with an absorptive optical attenuator by employing a broadband optical injec- tion seeding technique. Ultra-high density (8.2 × 1010/cm2) InAs/InGaAs QDs in the optical gain media can be effectively obtained on a GaAs substrate using a sandwiched sub-nano separator (SSNS) growth technique. A wide wavelength tuning range between 1.274 and 1.302 μm was achieved at a low current operation of 50 mA. In addition, a high extinction ratio of –20 dB at a low attenuator voltage (–2.5 V) was achieved in the fabricated QD-CML. It is expected that the developed QD-CML will become a suitable candidate for constructing a compact and low-power consumption wavelength-division multiplexing light source for optical communications and bio/medical-imaging.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. You have free access to this content
      Back Cover: Phys. Status Solidi C 2/2012

      Version of Record online: 23 JAN 2012 | DOI: 10.1002/pssc.201290001

      Thumbnail image of graphical abstract

      Masahito Nakamura et al. focus in their article on pp. 377 on constructing a monolithic integrated rectenna by using a triple-barrier resonant tunneling diode for zero bias detection. The upper parts of the cover picture show simulated examples of the H -field around the center region of the device for two different conditions of junction resistance at zero bias. The lower part shows the scaling effect on the frequency depen¬dence of the conversion efficiency.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. You have free access to this content
      Issue Information: Phys. Status Solidi C 2/2012

      Version of Record online: 23 JAN 2012 | DOI: 10.1002/pssc.201290002

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. You have free access to this content
  5. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. You have free access to this content
      Preface: Phys. Status Solidi C 2/2012 (pages 144–154)

      Martin Walther and Oliver Ambacher

      Version of Record online: 23 JAN 2012 | DOI: 10.1002/pssc.201260132

  6. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Crystal growth and deposition techniques

      Halide based MBE of crystalline metals and oxides (pages 155–160)

      Jordan D. Greenlee, W. Laws Calley, Walter Henderson and W. Alan Doolittle

      Version of Record online: 14 DEC 2011 | DOI: 10.1002/pssc.201100468

  7. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Crystal growth and deposition techniques

      Ferromagnetic and transport properties of p-type (Zn,Mn,Sn)As2thin films grown on InP substrates for various Mn contents (pages 161–164)

      N. Uchitomi, H. Endoh, H. Oomae, M. Yamazaki, H. Toyota and Y. Jinbo

      Version of Record online: 14 DEC 2011 | DOI: 10.1002/pssc.201100240

    2. Influence of the cone angle and crystal shape on the formation of twins in InP crystals (pages 165–168)

      Xiaolan Li, Ruixia Yang, Fan Yang, Tongnian Sun and Niefeng Sun

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100305

  8. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Oxides and carbon related materials

      Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot (pages 169–174)

      Stefan Fringes, Christian Volk, Bernat Terrés, Jan Dauber, Stephan Engels, Stefan Trellenkamp and Christoph Stampfer

      Version of Record online: 21 DEC 2011 | DOI: 10.1002/pssc.201100340

  9. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Oxides and carbon related materials

      Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain (pages 175–178)

      A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne and M. Portail

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100225

    2. Painted graphitic carbon films formed underneath Ni templates (pages 179–182)

      Meng-Yu Lin, Yung-Shuan Sheng, Shih-Yen Lin and Si-Chen Lee

      Version of Record online: 21 DEC 2011 | DOI: 10.1002/pssc.201100247

    3. Electrical transport properties in a single-walled carbon nanotube network (pages 183–186)

      Karim Snoussi, Amin Vakhshouri, Haruya Okimoto, Taishi Takenobu, Yoshihiro Iwasa, Shigeo Maruyama, Katsushi Hashimoto and Yoshiro Hirayama

      Version of Record online: 3 JAN 2012 | DOI: 10.1002/pssc.201100298

    4. Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx (pages 187–189)

      Wen-Yen Chen, Chi-Wen Lai, Chao-Chia Cheng, Cheng-Yu Chen, Jen-Inn Chyi and Tzu-Min Hsu

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100288

    5. Influence of annealing under reducing ambient on properties of ZnO thin films prepared by mist CVD (pages 190–193)

      T. Kawaharamura, H. Orita, T. Shirahata, A. Yoshida, S. Fujita and T. Hirao

      Version of Record online: 21 DEC 2011 | DOI: 10.1002/pssc.201100281

    6. Well-arrayed ZnO nanostructures formed by multi-annealing processes at low temperature (pages 194–197)

      Dapeng Wang, Zeming Li, Toshiyuki Kawaharamura, Mamoru Furuta, Tadashi Narusawa and Chaoyang Li

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100271

    7. Characterization of CuGaO2 films prepared by sol-gel methods (pages 198–201)

      Afishah Alias, Masato Sakamoto, Teppei Kimura and Katsuhiro Uesugi

      Version of Record online: 21 DEC 2011 | DOI: 10.1002/pssc.201100290

    8. Nanotechnologies and nanostructures

      High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates (pages 202–205)

      Sergio Bietti, Lucia Cavigli, Marco Abbarchi, Anna Vinattieri, Massimo Gurioli, Alexey Fedorov, Stefano Cecchi, Fabio Isa, Giovanni Isella and Stefano Sanguinetti

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100273

    9. Highly controlled InAs nanowires on Si(111) wafers by MOVPE (pages 206–209)

      Sepideh Gorji Ghalamestani, Sofia Johansson, B. Mattias Borg, Kimberly A. Dick and Lars-Erik Wernersson

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100258

    10. InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer (pages 210–213)

      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa and K. Shimomura

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100245

    11. InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy (pages 214–217)

      Y. Y. Liang, S. F. Yoon, C. Y. Ngo, W. K. Loke and E. A. Fitzgerald

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100261

    12. Structural properties of InAs-based nanostructures grown on GaAs(001) and GaAs(111)A by area selective epitaxy (pages 218–221)

      Marlene Zander, Jiro Nishinaga, Kazuki Iga and Yoshiji Horikoshi

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100274

    13. InAs/GaAs quantum dots for THz generation (pages 222–225)

      N. S. Daghestani, M. A. Cataluna, G. Berry, G. Ross and M. J. Rose

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100253

    14. Highly stacked InGaAs quantum dot laser diodes fabricated by ultrahigh-rate molecular beam epitaxial growth technique (pages 226–229)

      Fumihiko Tanoue, Hiroharu Sugawara, Kouichi Akahane and Naokatsu Yamamoto

      Version of Record online: 3 JAN 2012 | DOI: 10.1002/pssc.201100287

    15. Comparison of InAs nanowire conductivity: influence of growth method and structure (pages 230–234)

      Kamil Sladek, Andreas Winden, Stephan Wirths, Karl Weis, Christian Blömers, Önder Gül, Thomas Grap, Steffi Lenk, Martina von der Ahe, Thomas E. Weirich, Hilde Hardtdegen, Mihail Ion Lepsa, Andrey Lysov, Zi-An Li, Werner Prost, Franz-Josef Tegude, Hans Lüth, Thomas Schäpers and Detlev Grützmacher

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100282

    16. Limitations of Cl2/O2-based ICP-RIE of deep holes for planar photonic crystals in InP (pages 239–242)

      Peter Kaspar, Christopher Fougner, Roman Kappeler and Heinz Jäckel

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100223

    17. Physics, simulation and characterization

      Time-resolved detection of many-particle hole states in InAs/GaAs quantum dots using a two-dimensional hole gas up to 77 K (pages 243–246)

      T. Nowozin, A. Marent, D. Bimberg, A. Beckel, B. Marquardt, A. Lorke and M. Geller

      Version of Record online: 2 NOV 2011 | DOI: 10.1002/pssc.201100218

    18. Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy (pages 255–258)

      J. Kasai, R. Akimoto, T. Hasama, H. Ishikawa, S. Fujisaki, S. Tanaka and S. Tsuji

      Version of Record online: 14 DEC 2011 | DOI: 10.1002/pssc.201100214

    19. Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys (pages 259–261)

      A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100256

    20. Near-field photoluminescence spectroscopy of CdTe/Cd0.75Mn0.25Te tilted superlattices (pages 262–265)

      Yukihiro Harada, Takashi Kita, Kazunari Matsuda, Yoshihiko Kanemitsu and Henri Mariette

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100278

    21. Improvement of yield ratio of ohmic contact to GaAs/AlGaAs heterostructure by application of SiO2 protective layer (pages 270–273)

      Takehiko Oe, Kenjiro Matsuhiro, Taro Itatani, Sucheta Gorwadkar, Syogo Kiryu and Nobu-hisa Kaneko

      Version of Record online: 21 DEC 2011 | DOI: 10.1002/pssc.201100293

    22. A novel method to clarify nonlinear equivalent circuits of tunnel diodes by extracting rate constants for nonequilibrium electrons (pages 278–281)

      Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito and Michihiko Suhara

      Version of Record online: 21 DEC 2011 | DOI: 10.1002/pssc.201100792

    23. Light emitters and detectors

      1.3-μm wavelength-tunable quantum-dot optical frequency comb generator integrated with absorptive optical attenuator (pages 282–285)

      Naokatsu Yamamoto, Kouichi Akahane, Tetsuya Kawanishi, Redouane Katouf, Hideyuki Sotobayashi, Yuki Yoshioka and Hiroshi Takai

      Version of Record online: 21 DEC 2011 | DOI: 10.1002/pssc.201100255

    24. Modelling of passive mode-locking in InAs quantum-dot lasers with tapered gain section (pages 286–289)

      Mattia Rossetti, Tianhong Xu, Paolo Bardella and Ivo Montrosset

      Version of Record online: 2 NOV 2011 | DOI: 10.1002/pssc.201100243

    25. Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects (pages 290–293)

      J. A. Lott, A. S. Payusov, S. A. Blokhin, P. Moser, N. N. Ledentsov and D. Bimberg

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100315

    26. GaSb-based semiconductor saturable absorber mirrors for mode-locking 2 µm semiconductor disk lasers (pages 294–297)

      Jonna Paajaste, Soile Suomalainen, Riku Koskinen, Antti Härkönen, Günter Steinmeyer and Mircea Guina

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100299

    27. Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation (pages 298–301)

      Augustinas Vizbaras, Matthias Anders, Christian Grasse, Simeon Katz, Gerhard Boehm, Ralf Meyer, Mikhail A. Belkin and Markus-Christian Amann

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100257

    28. Beam steering and lateral hole burning in mid-infrared quantum- cascade lasers (pages 302–305)

      Quankui Yang, Michel Kinzer, Frank Fuchs, Stefan Hugger, Borislav Hinkov, Wolfgang Bronner, Rainer Lösch, Rolf Aidam and Joachim Wagner

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100248

    29. Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing (pages 310–313)

      Pin Jern Ker, Andrew R. J. Marshall, John P. R. David and Chee Hing Tan

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100277

    30. The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors (pages 314–317)

      Wei-Hsun Lin, Chi-Che Tseng, Shung-Yi Wu, Meng-Hsun Wu, Shih-Yen Lin and Meng-Chyi Wu

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100246

    31. Substrate removal of dual-colour InAs/GaSb superlattice focal plane arrays (pages 318–321)

      Robert Rehm, Martin Walther, Johannes Schmitz, Matthias Wauro, Wolfgang Luppold, Jasmin Niemasz, Frank Rutz, Andreas Wörl, Jan-Michael Masur, Lutz Kirste, Ralf Scheibner, Joachim Wendler and Johann Ziegler

      Version of Record online: 3 JAN 2012 | DOI: 10.1002/pssc.201100470

    32. Self-assembled InGaAs/GaAs quantum dot photodetector on germanium substrate (pages 322–325)

      Sreetama Banerjee, Nilanjan Halder and Subhananda Chakrabarti

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100252

    33. Excitonic absorption on AlGaAs/GaAs superlattice solar cells (pages 330–333)

      Jiro Nishinaga, Atsushi Kawaharazuka, Koji Onomitsu, Klaus H. Ploog and Yoshiji Horikoshi

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100276

    34. A new approach of planar oxidation of buried AlxGa1–xAs/GaAs epitaxial structures for optical and electrical confinement applications (pages 338–341)

      F. Chouchane, J. B. Doucet, A. Arnoult, G. Lacoste, C. Fontaine and G. Almuneau

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100264

    35. Electric characteristics of ruthenium doped InP and its application for buried-heterostructure lasers (pages 342–345)

      Harunaka Yamaguchi, Takashi Nagira, Go Sakaino, Kenichi Ono and Masayoshi Takemi

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100262

    36. High frequency and high power devices

      Comparative study on nano-scale III-V MOSFETs with various channel materials using quantum-corrected Monte Carlo simulation (pages 346–349)

      Takahiro Homma, Kei Hasegawa, Hisanao Watanabe, Shinsuke Hara and Hiroki I. Fujishiro

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100275

    37. High frequency vertical InAs nanowire MOSFETs integrated on Si substrates (pages 350–353)

      Sofia Johansson, Sepideh Gorji Ghalamestani, Mikael Egard, Mattias Borg, Martin Berg, Lars-Erik Wernersson and Erik Lind

      Version of Record online: 20 DEC 2011 | DOI: 10.1002/pssc.201100249

    38. InGaAs HEMTs with T-gate electrodes fabricated using HMDS SiN mold (pages 354–356)

      Tomohiro Yoshida, Keisuke Akagawa, Taiichi Otsuji and Tetsuya Suemitsu

      Version of Record online: 14 DEC 2011 | DOI: 10.1002/pssc.201100272

    39. Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer (pages 357–360)

      Yuta Koreeda, Yutaka Endo, Kouichi Sato, Kenya Yoshizawa, Yui Nishio, Hirohisa Taguchi, Tsutomu Iida and Yoshifumi Takanashi

      Version of Record online: 14 DEC 2011 | DOI: 10.1002/pssc.201100270

    40. Numerical analysis of short-gate GaN HEMTs with Fe-doped buffer layers (pages 361–364)

      Mayumi Hirose, Yoshiharu Takada and Kunio Tsuda

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100283

    41. Trade-offs between performance and reliability in AlGaN/GaN transistors (pages 365–368)

      Patrick Waltereit, Wolfgang Bronner, Rudolf Kiefer, Rüdiger Quay, Michael Dammmann, Markus Cäsar, Peter Brückner, Stefan Müller, Michael Mikulla and Oliver Ambacher

      Version of Record online: 7 NOV 2011 | DOI: 10.1002/pssc.201100294

    42. 31 GHz power characteristics of GaN HEMTs with slightly etched AlGaN layer at ohmic contact (pages 369–372)

      Mayumi Hirose, Yoshiharu Takada, Keiichi Matsushita, Kazutaka Takagi and Kunio Tsuda

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100279

    43. High carrier concentration in high Al-composition AlGaN-channnel HEMTs (pages 373–376)

      Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Norimasa Yafune, Keiichi Sakuno, Hirokuni Tokuda, Masaaki Kuzuhara, Kenichiro Takeda, Motoaki Iwaya and Hiroshi Amano

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100289

    44. Novel device concepts

      Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation (pages 381–384)

      R. Driad, R. Schmidt, L. Kirste, R. Loesch, M. Mikulla and O. Ambacher

      Version of Record online: 2 NOV 2011 | DOI: 10.1002/pssc.201100228

    45. Electrical characteristics of in-plane gate logic devices (pages 385–388)

      Yuji Komatsuzaki, Tomoteru Kyougoku, Kenichi Saba, Koji Onomitsu, Hiroshi Yamaguchi and Yoshiji Horikoshi

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/pssc.201100269

    46. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field (pages 389–392)

      Rui Li, Yeqing Lu, Soo Doo Chae, Guangle Zhou, Qingmin Liu, Chen Chen, M. Shahriar Rahman, Tim Vasen, Qin Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing, Siyuranga Koswatta and Alan Seabaugh

      Version of Record online: 2 NOV 2011 | DOI: 10.1002/pssc.201100241

  10. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Sensors and actuators

  11. Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. Invited Article
    8. Contributed Articles
    9. Invited Article
    10. Contributed Articles
    11. Invited Article
    12. Contributed Articles
    1. Sensors and actuators

      Analysis of resonant MEMS based on high-electron mobility transistor-like structure (pages 399–402)

      Irina Khmyrova, Ryosuke Yamase, Norikazu Watanabe, Takao Maeda, Elena Shestakova, Evgeny Polushkin, Anatoly Kovalchuk and Sergei Shapoval

      Version of Record online: 2 NOV 2011 | DOI: 10.1002/pssc.201100224

    2. Evaluation of AlN material properties through vibration analysis of thin membranes (pages 403–406)

      Vadim Lebedev, Fabian Knöbber, Nicola Heidrich, Ram Ekwal Sah, Wilfried Pletschen, Volker Cimalla and Oliver Ambacher

      Version of Record online: 14 DEC 2011 | DOI: 10.1002/pssc.201100259

    3. Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts (pages 407–410)

      Hubert J. Krenner, Stefan Völk, Florian J. R. Schülein, Florian Knall, Achim Wixforth, Dirk Reuter, Andreas D. Wieck, Hyochul Kim, Tuan A. Truong and Pierre M. Petroff

      Version of Record online: 2 NOV 2011 | DOI: 10.1002/pssc.201100236

SEARCH

SEARCH BY CITATION