physica status solidi (c)

Cover image for Vol. 9 Issue 3‐4

Special Issue: 9th International Conference on Nitride Semiconductors (ICNS-9); see further papers in Phys. Status Solidi B 249, No. 3 (2012) and Phys. Status Solidi A 209, No. 3 (2012) • E-MRS 2011 Spring Meeting – Symposium H; see further papers in Phys. Status Solidi A 209, No. 1 (2012) • E-MRS 2011 Spring Meeting – Symposium F; see further papers in Phys. Status Solidi RRL 6, No. 2 (2012) and Phys. Status Solidi B 249, No. 3 (2012)

March 2012

Volume 9, Issue 3-4

Pages 411–1113

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. You have free access to this content
      Cover Picture: Phys. Status Solidi C 3–4/2012

      Version of Record online: 22 MAR 2012 | DOI: 10.1002/pssc.201290003

      Thumbnail image of graphical abstract

      In the nitride system, polarization of light is an extraordinary property of quantum wells (QWs) with growth direction inclined to the c-axis. This anisotropy of emission is a direct consequence of strain symmetry in these pseudomorphically grown semipolar and nonpolar oriented layers.

      A nonpolar quantum well above a schematic illustration of the wurtzite crystalline structure is drafted in the left part of the image. This property of its emission is expressed by spherical harmonics on top. They reflect the optical polarization of the emitted light in all growth directions. From polar to nonpolar grown QWs, even a switching behavior can be detected, indicated on the surrounding circle.

      In their article on pp. 700 L. Schade et al. report on the spectral properties of optically polarized light originating from semipolar and nonpolar InGaN quantum wells at low temperatures. There, only one radiative transition contributes to the emission. All data can be explained by the influence of the varying indium content within the quantum wells of different crystal orientation.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. You have free access to this content
      Back Cover: Phys. Status Solidi C 3–4/2012

      Version of Record online: 22 MAR 2012 | DOI: 10.1002/pssc.201290004

      Thumbnail image of graphical abstract

      The work of Lewis Z.-Y. Liu et al. (pp. 704) enables high resolution real-time characterisation of LEDs under their working conditions. The figure shows a GaN-based LED chip emitting light on an in-situ biasing TEM holder, on which a TEM lamella has been prepared by FIB. The design ensures that a significant amount of the current goes through the cross-sectional TEM lamella. The paper focuses on using electron holography to determine the electrostatic potential across the LED structure. This experimental platform allows a variety of TEM techniques to be applied to extract a range of information from a working LED at high spatial resolution.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. You have free access to this content
  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. You have free access to this content
  5. ICNS-9 – Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. You have free access to this content
      Preface: Phys. Status Solidi C 3–4/2012 (pages 430–432)

      Peter J. Parbrook, Robert W. Martin and Matthew P. Halsall

      Version of Record online: 22 MAR 2012 | DOI: 10.1002/pssc.201260134

  6. ICNS-9 – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. Bulk and template growth

      Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid (pages 433–435)

      Shun Sadakuni, Junji Murata, Yasuhisa Sano, Keita Yagi, Takeshi Okamoto, Kazuma Tachibana, Hiroya Asano and Kazuto Yamauchi

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100406

    2. In situ monitoring technologies for ammonthermal reactors (pages 436–439)

      N. Alt, E. Meissner, E. Schlücker and L. Frey

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100361

    3. Chlorine-free plasma-based vapour growth of GaN (pages 440–444)

      D. Siche, K. Kachel, R. Zwierz, S. Golka, A. Vodopyanov, I. Izotov, P. Sennikov, S. Golubev, K.-P. Franke, P. Sudhoff and D. Gogova

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100322

    4. Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template (pages 445–448)

      Xingbin Li, Tongjun Yu, Yuebin Tao, Junjing Deng, Chenglong Xu and Guoyi Zhang

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100409

    5. Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals (pages 449–452)

      Matthias Bickermann, Boris M. Epelbaum, Octavian Filip, Barbara Tautz, Paul Heimann and Albrecht Winnacker

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100345

    6. High nitrogen pressure solution growth of GaN in multi feed-seed configuration (pages 453–456)

      M. Bockowski, B. Lucznik, T. Sochacki, B. Sadovyi, G. Nowak, E. Litwin-Staszewska and I. Grzegory

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100366

    7. Effect of additives on liquid phase epitaxy growth of non-polar GaN single crystals using Na flux method (pages 457–460)

      K. Masumoto, T. Someno, K. Murakami, H. Imabayashi, H. Takazawa, A. Kitamoto, N. Miyoshi, M. Maruyama, M. Imade, M. Yoshimura, Y. Kitaoka, T. Sasaki and Y. Mori

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100309

    8. Epitaxial growth and structural properties

      The negligible effects of miscut on indium aluminium nitride growth (pages 461–464)

      Thomas Sadler, Fabien Massabuau, Menno Kappers and Rachel Oliver

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100459

    9. On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells (pages 465–468)

      M. J. Kappers, T. J. Badcock, R. Hao, M. A. Moram, S. Hammersley, P. Dawson and C. J. Humphreys

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100475

    10. Transfer characteristic of zinc nitride based thin film transistors (pages 469–472)

      S. R. Bhattacharyya, R. Ayouchi, M. Pinnisch and R. Schwarz

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100802

    11. Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate (pages 473–475)

      Xueliang Zhu, Jun Ma, Tongde Huang, Ming Li, Ka Ming Wong and Kei May Lau

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100447

    12. Monolithic integration of semipolar pyramidal LEDs with tailored wavelengths (pages 476–479)

      Masakazu Sugiyama, Tatsuki Fujiwara and Yoshiaki Nakano

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100443

    13. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates (pages 480–483)

      Tadashi Mitsunari, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100502

    14. Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires (pages 484–487)

      J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, Ph. Komninou and Th. Karakostas

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100372

    15. Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE (pages 488–491)

      Takaaki Kuwahara, Noriyuki Kuwano, Akihiko Kurisu, Narihito Okada and Kazuyuki Tadatomo

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100367

    16. Investigations on Si-doped AlGaN: Below and above the Mott density (pages 492–495)

      Kamran Forghani, Mohammadreza Gharavipour, Ferdinand Scholz and Klaus Thonke

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100481

    17. Investigation of inversion domain formation in AlN grown on sapphire by MOVPE (pages 496–498)

      Viola Kueller, Arne Knauer, Frank Brunner, Anna Mogilatenko, Michael Kneissl and Markus Weyers

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100495

    18. Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN (pages 499–502)

      Reina Miyagawa, Shibo Yang, Hideto Miyake and Kazumasa Hiramatsu

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100712

    19. Epitaxial growth of GaN films on Si(110) substrates by rf-MBE (pages 503–506)

      X. Q. Shen, T. Ide and M. Shimizu

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100304

    20. Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113) (pages 507–510)

      Roghaiyeh Ravash, Peter Veit, Mathias Müller, Gordon Schmidt, Anja Dempewolf, Thomas Hempel, Jürgen Bläsing, Frank Bertram, Armin Dadgar, Jürgen Christen and Alois Krost

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100532

    21. Significance of initial stages on the epitaxial growth of AlN using high temperature halide chemical vapor deposition (pages 511–514)

      Manavaimaran Balaji, Arnaud Claudel, Vincent Fellmann, Isabelle Gélard, Elisabeth Blanquet, Raphaël Boichot, Stéphane Coindeau, Hervé Roussel, Didier Pique, Krishnan Baskar and Michel Pons

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100357

    22. Influence of sputter power and N2 gas flow ratio on crystalline quality of AlN layers deposited at 823 K by RF reactive sputtering (pages 515–518)

      Tomoyuki Kumada, Makoto Ohtsuka, Kazuya Takada and Hiroyuki Fukuyama

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100489

    23. Growth of GaN and AlGaN on (100) β-Ga2O3 substrates (pages 519–522)

      Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100499

    24. Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy (pages 523–526)

      Yvon Cordier, Franck Natali, Magdalena Chmielowska, Mathieu Leroux, Catherine Chaix and Pierre Bouchaib

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100375

    25. Formation of low-resistance and thermally stable Ohmic contacts to laser lift-off prepared N-polar n-GaN (pages 527–529)

      Junjing Deng, Zhizhong Chen, Suyuan Wang, Feng Yu, Shengli Qi, Tongjun Yu and Guoyi Zhang

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100398

    26. Anion modulation epitaxy (AME), an alternative growth strategy for group III-nitrides (pages 530–533)

      Lucy E. Goff, C. Thomas Foxon, Christopher R. Staddon, Anthony J. Kent and Richard P. Campion

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100311

    27. Structural characterization of InN epilayers grown on r -plane sapphire by plasma-assisted MBE (pages 534–537)

      A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas and Ph. Komninou

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100389

    28. Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers (pages 538–541)

      S. V. Novikov, C. R. Staddon, R. E. L. Powell, A. V. Akimov, A. J. Kent and C. T. Foxon

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100297

    29. MOVPE growth of InGaAsN films on Ge(001) on-axis and vicinal substrates (pages 542–545)

      K. Uesugi, T. Kikuchi, S. Kuboya, S. Sanorpim and K. Onabe

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100360

    30. Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM (pages 546–549)

      Houari Amari, Ian M. Ross, Tao Wang and Thomas Walther

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100500

    31. Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer (pages 550–553)

      H. Fang, Y. Takaya, S. Ohuchi, H. Miyake, K. Hiramatsu, H. Asamura and K. Kawamura

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100332

    32. III-nitride grown on freestanding GaN nanostructures (pages 554–557)

      Yongjin Wang, Fangren Hu, Hongbo Zhu and Kazuhiro Hane

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100265

    33. MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer (pages 558–561)

      Masahiro Kakuda, Kenzo Makino, Takashi Ishida, Shigeyuki Kuboya and Kentaro Onabe

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100395

    34. Growth of high quality III-N heterostructures using specialized MBE system (pages 562–563)

      S. I. Petrov, A. N. Alexeev, D. M. Krasovitsky and V. P. Chaly

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100399

    35. Growth of {11-22} GaN on shallowly etched r -plane patterned sapphire substrates (pages 568–571)

      Hiroshi Furuya, Narihito Okada and Kazuyuki Tadatomo

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100352

    36. Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE (pages 576–579)

      Yuta Takagi, Reina Miyagawa, Hideto Miyake and Kazumasa Hiramatsu

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100797

    37. The role of liquid phase epitaxy during growth of AlGaN by MBE (pages 580–583)

      Theodore D. Moustakas and Anirban Bhattacharyya

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100427

    38. Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates (pages 584–587)

      James Tweedie, Ramón Collazo, Anthony Rice, Seiji Mita, Jinqiao Xie, Rajiv-Christer Akouala and Zlatko Sitar

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100435

    39. Sequential tunneling transport in GaN/AlGaN quantum cascade structures (pages 588–591)

      Faisal F. Sudradjat, Wei Zhang, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David J. Smith, Theodore D. Moustakas and Roberto Paiella

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100423

    40. Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces (pages 592–595)

      M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata and N. Shigekawa

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100319

    41. Nanostructures and novel nitride alloys

      Self-catalyzed, vertically aligned GaN rod-structures by metal-organic vapor phase epitaxy (pages 596–600)

      Christian Tessarek and Silke Christiansen

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100471

    42. InGaN/GaN quantum wells grown on freestanding HfO2 photonic crystals (pages 601–604)

      Yongjin Wang, Tong Wu, Fangren Hu, Hongbo Zhu and Kazuhiro Hane

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100320

    43. Epitaxial growth and properties of GdN, EuN and SmN thin films (pages 605–608)

      Franck Natali, Bart Ludbrook, Jules Galipaud, Natalie Plank, Simon Granville, Andrew Preston, Bin Le Do, Jan Richter, Ian Farrell, Roger Reeves, Steve Durbin, Joe Trodahl and Ben Ruck

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100363

    44. Self-assembled m -plane InGaN quantum dots: formation and shape evolution (pages 613–615)

      Xuelin Yang, Munetaka Arita, Satoshi Kako and Yasuhiko Arakawa

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100482

    45. Size effect on efficiency droop of blue light emitting diode (pages 616–619)

      Y. B. Tao, S. Y. Wang, Z. Z. Chen, Z. Gong, E. Y. Xie, Y. J. Chen, Y. F. Zhang, J. McKendry, D. Massoubre, E. D. Gu, B. R. Rae, R. K. Henderson and G. Y. Zhang

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100483

    46. Morphology evolution and optical properties of GaN nano-pyramids grown by selective area MOVPE (pages 624–627)

      Andreas Winden, Martin Mikulics, Anna Haab, Toma Stoica, Martina von der Ahe, Konrad Wirtz, Hilde Hardtdegen and Detlev Grützmacher

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100411

    47. X-ray excited optical luminescence imaging of InGaN nano-LEDs (pages 628–630)

      G. Martínez-Criado, J. A. Sans, J. Segura-Ruiz, R. Tucoulou, A. V. Solé, A. Homs, J. Yoo, J. G.-C. Yi and B. Alén

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100430

    48. Fabrication and properties of etched GaN nanorods (pages 631–634)

      Philip Shields, Maxime Hugues, Jesus Zúñiga-Pérez, Mike Cooke, Mark Dineen, Wang Wang, Federica Causa and Duncan Allsopp

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100394

    49. Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs (pages 635–638)

      Christopher C. S. Chan, Philip A. Shields, Mark J. Holmes, YiDing Zhuang, Xu Wang, Benjamin P. L. Reid, HeeDae Kim, Duncan W. E. Allsopp and Robert A. Taylor

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100386

    50. Characterization of single semiconductor nanowires by synchrotron radiation nanoprobe (pages 639–641)

      J. Segura-Ruiz, G. Martinez-Criado, M. H. Chu, R. Tucoulou, M. Gomez-Gomez and N. Garro

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100434

    51. Responsivity and photocurrent dynamics in single GaN nanowires (pages 642–645)

      F. González-Posada, R. Songmuang, M. Den Hertog and E. Monroy

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100382

    52. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE (pages 646–649)

      Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100446

    53. InN and related materials

      Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE (pages 650–653)

      Quanzhong Jiang, Michael J. Edwards, Philip A. Shields, Duncan W. E. Allsopp, Christopher R. Bowen, Wang N. Wang, Lajos Tóth, Bela Pécz, Rudolf Srnanek, Alexander Satka and Jaroslav Kovac

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100368

    54. Phase diagram on phase purity of InN grown pressurized-reactor MOVPE (pages 654–657)

      Takeshi Kimura, Kiattiwut Prasertsuk, Yuantao Zhang, Yuhuai Liu, Takashi Hanada, Ryuji Katayama and Takashi Matsuoka

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100390

    55. RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110) (pages 658–661)

      Misao Orihara, Shuhei Yagi, Yasuto Hijikata and Hiroyuki Yaguchi

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100365

    56. Surface electronic properties of In-rich InGaN alloys grown by MOCVD (pages 662–665)

      W. M. Linhart, Ö. Tuna, T. D. Veal, J. J. Mudd, C. Giesen, M. Heuken and C. F. McConville

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100463

    57. Growth of InN quantum dots by droplet epitaxy and their characterization (pages 666–669)

      D. Krishnamurthy, S. Hasegawa, S. N. M. Tawil, S. Emura and H. Asahi

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100329

    58. MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content (pages 670–672)

      Ashraful G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama and N. Shigekawa

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100355

    59. Anti-corrosive stainless steel separator coated with MOCVD InGaN for polymer electrolyte fuel cell (PEFC) (pages 673–676)

      M. Shimahashi, K. Matsui, K. Okada, K. Sugita, H. Sasaki and A. Yamamoto

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100439

    60. Influence of growth temperature on the twin formation of InN{10equation image3} on GaAs(110) by metalorganic vapor phase epitaxy (pages 677–680)

      Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai and Akinori Koukitu

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100383

    61. Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE (pages 681–684)

      Kiattiwut Prasertsuk, Masaki Hirata, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Takuya Iwabuchi, Ryuji Katayama and Takashi Matsuoka

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100404

    62. Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy (pages 685–688)

      Anja Eisenhardt, Georg Eichapfel, Marcel Himmerlich, Andreas Knübel, Thorsten Passow, Chunyu Wang, Fouad Benkhelifa, Rolf Aidam and Stefan Krischok

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100378

    63. Peculiarities of galvanomagnetic effects in GaN epilayers and GaN/InGaN quantum wells (pages 689–692)

      P. Malinovskis, A. Mekys, A. Kadys, T. Malinauskas, T. Grinys, V. Bikbajevas, R. Tomašiūnas and J. Storasta

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100407

    64. Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures (pages 693–696)

      Saurabh Pandey, Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100359

    65. Highly enhanced migration in Pt-catalyst-assisted MOVPE InN by controlling the catalyst temperature (pages 697–699)

      K. Sugita, T. Hotta, D. Hironaga, A. Mihara, A. G. Bhuiyan, A. Hashimoto and A. Yamamoto

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100441

    66. Optical and magnetic properties

      Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures (pages 700–703)

      L. Schade, U. T. Schwarz, T. Wernicke, S. Ploch, M. Weyers and M. Kneissl

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100493

    67. Electron holography of an in-situ biased GaN-based LED (pages 704–707)

      L. Z.-Y. Liu, C. McAleese, D. V. Sridhara Rao, M. J. Kappers and C. J. Humphreys

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100486

    68. Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution (pages 712–714)

      Mark J. Holmes, Young S. Park, Xu Wang, Christopher C. S. Chan, Benjamin P. L. Reid, HeeDae Kim, Jun Luo, Jamie H. Warner and Robert A. Taylor

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100327

    69. Photoluminescence changes in n-type GaN samples after photoelectrochemical treatment (pages 715–718)

      Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh and Takafumi Yao

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100310

    70. Large magneto-optical effect in low-temperature-grown GaCrN and GaCrN:Si (pages 719–722)

      Y. K. Zhou, P. H. Fan, S. Emura, S. Hasegawa and H. Asahi

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100504

    71. Atom probe tomography study of GaMnN thin films (pages 723–726)

      Robert Nicholas, David Diercks and Matthew Kane

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100344

    72. Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells (pages 727–729)

      O. Kopylov, R. Shirazi, O. Svensk, S. Suihkonen, S. Sintonen, M. Sopanen and B. E. Kardynał

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100391

    73. Observation of A1(LO), E2(high) and B1(high) phonon modes in Inx Ga1–xN alloys with x = 0.11–0.54 (pages 730–732)

      J. G. Kim, Y. Kamei, A. Kimura, N. Hasuike, H. Harima, K. Kisoda, T. Hotta, K. Sasamoto and A. Yamamoto

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100401

    74. Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD (pages 733–736)

      Jianping Zeng, Jianchang Yan, Junxi Wang, Peipei Cong, Jinmin Li, Shuaishuai Sun and Ye Tao

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100318

    75. Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure (pages 737–740)

      Mohamed Almokhtar, Shuichi Emura, Yi Kai Zhou, Shigehiko Hasegawa and Hajime Asahi

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100469

    76. Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy (pages 741–744)

      Shigehiko Hasegawa, Sachio Komori, Kotaro Higashi, Daijiro Abe, Yi-Kai Zhou and Hajime Asahi

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100403

    77. Shallow donors and deep level color centers in AlN single crystals: EPR, ODMR and optical studies (pages 745–748)

      V. A. Soltamov, I. V. Ilyin, A. A. Soltamova, D. O. Tolmachev, N. G. Romanov, A. S. Gurin, E. N. Mokhov and P. G. Baranov

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100433

    78. Light emitting diodes and improving efficiency

      Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system (pages 749–752)

      Takuya Mino, Hideki Hirayama, Takayoshi Takano, Norimichi Noguchi and Kenji Tsubaki

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100358

    79. Laser lift-off of AlN/sapphire for UV light-emitting diodes (pages 753–756)

      Hiroki Aoshima, Kenichiro Takeda, Kosuke Takehara, Shun Ito, Mikiko Mori, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100491

    80. Analyses of light extraction efficiency in GaN-based LEDs grown on patterned sapphire substrates (pages 757–760)

      Chenglong Xu, Tongjun Yu, Jian Yan, Zhiyuan Yang, Xingbin Li, Yuebin Tao, Xingxing Fu, Zhizhong Chen and Guoyi Zhang

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100412

    81. Higher output power of near-ultraviolet LED grown on GaN substrate with back-side etching (pages 761–764)

      Yen-Hsiang Fang, Yi-Keng Fu, Rong Xuan, Ren-Hao Jiang and Chia-Feng Lin

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100347

    82. Studies of efficiency droop in GaN based LEDs (pages 765–769)

      W. A. Phillips, E. J. Thrush, Y. Zhang and C. J. Humphreys

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100458

    83. A comparative study of UV electro-absorption modulators based on bulk III-nitride films and multiple quantum wells (pages 770–773)

      Chen-kai Kao, A. Bhattacharyya, C. Thomidis, A. Moldawer, R. Paiella and T. D. Moustakas

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100437

    84. Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs (pages 774–777)

      A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, V. S. Sizov, A. L. Zakgeim, M. N. Mizerov, N. A. Cherkashin and M. Hytch

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssc.201100339

    85. Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique (pages 778–781)

      Tohru Honda, Naoyuki Sakai, Shigetoshi Komiyama, Masato Hayashi and Tatsuhiro Igaki

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100387

    86. The influence of underlying layer on morphology of InGaN quantum dots self-assembled by metal organic vapor phase epitaxy (pages 782–785)

      Lai Wang, Wei Zhao, Wenbin Lv, Lei Wang, Zhibiao Hao and Yi Luo

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100303

    87. High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates (pages 790–793)

      Sachie Fujikawa, Hideki Hirayama and Noritoshi Maeda

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100453

    88. Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes (pages 794–797)

      Thorsten Passow, Richard Gutt, Michael Kunzer, Lutz Kirste, Wilfried Pletschen, Kamran Forghani, Ferdinand Scholz, Klaus Köhler and Joachim Wagner

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100388

    89. Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy (pages 798–801)

      Yitao Liao, Chen-kai Kao, C. Thomidis, A. Moldawer, J. Woodward, D. Bhattarai and T. D. Moustakas

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100438

    90. Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode (pages 806–809)

      Masahiro Akiba, Hideki Hirayama, Yuji Tomita, Yusuke Tsukada, Noritoshi Maeda and Norihiko Kamata

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100370

    91. Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate (pages 810–813)

      Noritoshi Maeda, Hideki Hirayama and Sachie Fugikawa

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100425

    92. Integrated high reflectivity silicon substrates for GaN LEDs (pages 814–817)

      F. Erdem Arkun, Rytis Dargis, Robin Smith, David Williams, Andrew Clark and Michael Lebby

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100393

    93. The difference between reflectance and electroreflectance spectra of AlGaN/GaN/InGaN LED structures (pages 818–821)

      Lev Avakyants, Artem Aslanyan, Pavel Bokov, Anatoly Chervyakov and Kirill Polozhentsev

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100451

    94. Lasing and laser diodes

      Optically pumped UV lasers grown on bulk AlN substrates (pages 822–825)

      T. Wunderer, C. L. Chua, J. E. Northrup, Z. Yang, N. M. Johnson, M. Kneissl, G. A. Garrett, H. Shen, M. Wraback, B. Moody, H. S. Craft, R. Schlesser, R. F. Dalmau and Z. Sitar

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100424

    95. Theory and modelling of materials and devices

      Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions (pages 826–829)

      Pawel Kempisty, Pawel Strak and Stanislaw Krukowski

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100498

    96. Built-in field control in nitride nanostructures operating in the UV (pages 838–841)

      Miguel A. Caro, Stefan Schulz, Sorcha B. Healy and Eoin P. O'Reilly

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100501

    97. Power and high frequency devices

      Effect of hole injection in AlGaN/GaN HEMT with GIT structure by numerical simulation (pages 847–850)

      Hiroshi Chonan, Toshihide Ide, Xu-Qiang Shen and Mitsuaki Shimizu

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100330

    98. Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions (pages 851–854)

      Woo Jin Ha, Sameer Chhajed, Ashonita Chavan, Jae-Hoon Lee, Ki-Se Kim and Jong Kyu Kim

      Version of Record online: 12 DEC 2011 | DOI: 10.1002/pssc.201100487

    99. 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate (pages 855–857)

      Zhihong Feng, Bo Liu, Jiayun Yin, Jinjin Wang, Guodong Gu, Shaobo Dun and Shujun Cai

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100306

      Corrected by:

      Erratum: Erratum: 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate [Phys. Status Solidi C 9, 855–857 (2012)]

      Vol. 9, Issue 12, 2644, Version of Record online: 19 NOV 2012

    100. High threshold voltage normally-off GaN MISFETs using self-alignment technique (pages 858–860)

      Shinya Taguchi, Kazuya Hasegawa, Kazuki Nomoto and Tohru Nakamura

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100321

    101. Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage (pages 864–867)

      Casey Kirkpatrick, Bongmook Lee, YoungHwan Choi, Alex Huang and Veena Misra

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100421

    102. Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application (pages 868–870)

      Bongmook Lee, Casey Kirkpatrick, Young-hwan Choi, Xiangyu Yang, Alex Q. Huang and Veena Misra

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100422

    103. Normally-off AlGaN/GaN power tunnel-junction FETs (pages 871–874)

      Hongwei Chen, Li Yuan, Qi Zhou, Chunhua Zhou and Kevin J. Chen

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100338

    104. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate (pages 875–878)

      T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka and Y. Mori

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100397

    105. Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs (pages 879–882)

      Shenghou Liu, Yong Cai, Rumin Gong, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, Jingjing Wang, Jiayun Yin, Cheng P. Wen, Hua Qin and Baoshun Zhang

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100415

    106. Equivalent-circuit-model for GaN-GIT bi-directional switch including influence of gate resistance (pages 887–890)

      Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen, Tatsuo Morita, Tetsuzo Ueda and Tsuyoshi Tanaka

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100353

    107. Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer (pages 891–893)

      Tetsuya Fujiwara, Stacia Keller, James S. Speck, Steven P. DenBaars and Umesh K. Mishra

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100419

    108. N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs (pages 894–897)

      D. J. Meyer, D. S. Katzer, R. Bass, N. Y. Garces, M. G. Ancona, D. A. Deen, D. F. Storm and S. C. Binari

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100431

    109. Reduction of current collapse in the multi-mesa-channel AlGaN/GaN HEMT (pages 898–902)

      Kota Ohi and Tamotsu Hashizume

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100301

    110. Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications (pages 903–906)

      Peter Brückner, R. Kiefer, C. Haupt, A. Leuther, S. Müller, R. Quay, D. Schwantuschke, M. Mikulla and O. Ambacher

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100462

    111. Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices (pages 907–910)

      Thomas Marron, Shinya Takashima, Zhongda Li and T. Paul Chow

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100414

    112. Device fabrication and reliability

      Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements (pages 911–914)

      Martin Mikulics, Hilde Hardtdegen, Andreas Winden, Alfred Fox, Michel Marso, Zdeněk Sofer, Hans Lüth, Detlev Grützmacher and Peter Kordoš

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100408

    113. Reduction of peak electric field strength in GaN-HEMT with carbon doping layer (pages 915–918)

      Tetsuo Narita, Daigo Kikuta, Hiroko Iguchi, Kenji Ito, Kazuyoshi Tomita, Tsutomu Uesugi and Tetsu Kachi

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100331

    114. Effect of post-gate RTA on leakage current (Ioff) in GaN MOSHEMTs (pages 919–922)

      Tongde Huang, Ka Ming Wong, Ming Li, Xueliang Zhu and Kei May Lau

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100444

    115. Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement (pages 923–926)

      Sen Huang, Shu Yang, John Roberts and Kevin J. Chen

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100302

    116. Study on post-etching processes for p-type GaN using HAX-PES (pages 927–930)

      Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Kazuyoshi Tomita, Tsutomu Uesugi and Tetsu Kachi

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100335

    117. Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure (pages 931–933)

      B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.-M. Lamy, M. Akhter, P. P. Maaskant, E. Frayssinet, P. de Mierry and J.-Y. Duboz

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100473

    118. Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs (pages 938–941)

      Stefanie Linkohr, Wilfried Pletschen, Lutz Kirste, Marcel Himmerlich, Pierre Lorenz, Stefan Krischok, Vladimir Polyakov, Stefan Müller, Oliver Ambacher and Volker Cimalla

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100418

    119. Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors (pages 942–944)

      Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

      Version of Record online: 29 NOV 2011 | DOI: 10.1002/pssc.201100492

    120. GaN on sapphire mesa technology (pages 945–948)

      Patrick Herfurth, Yakiv Men, Rudolph Rösch, Jean-Francois Carlin, Nicolas Grandjean and Erhard Kohn

      Version of Record online: 26 JAN 2012 | DOI: 10.1002/pssc.201100405

    121. A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time (pages 949–952)

      Yue-Ming Hsin, Tsung-Yu Ke, Geng-Yen Lee, Jen-Inn Chyi and Hsien-Chin Chiu

      Version of Record online: 3 FEB 2012 | DOI: 10.1002/pssc.201100343

    122. InGaN photodiodes using CaF2 insulator for high-temperature UV detection (pages 953–956)

      L. W. Sang, M. Y. Liao, Y. Koide and M. Sumiya

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssc.201100374

    123. Sensors and photodetectors

      Comparison of neutron conversion layers for GaN-based scintillators (pages 957–959)

      Andrew G. Melton, Eric Burgett, Tianming Xu, Nolan Hertel and Ian T. Ferguson

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100432

    124. Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane (pages 960–963)

      M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen and D. W. E. Allsopp

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100371

    125. Highly n-type doped InGaN films for efficient direct solar hydrogen generation (pages 964–967)

      C. Mauder, Ö. Tuna, B. Gutrath, V. Balmes, H. Behmenburg, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, M. Noyong, U. Simon, M. Heuken, H. Kalisch and A. Vescan

      Version of Record online: 7 DEC 2011 | DOI: 10.1002/pssc.201100400

    126. Ohmic and rectifying contacts on bulk AlN for radiation detector applications (pages 968–971)

      Tobias Erlbacher, Matthias Bickermann, Birgit Kallinger, Elke Meissner, Anton J. Bauer and Lothar Frey

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100341

    127. Solar cells and energy harvesting

      Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells (pages 972–974)

      S. Nagarajan, M. Ali, H. Jussila, P. Mattila, A. Aierken, M. Sopanen and H. Lipsanen

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100333

  7. EMRS-H – Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. You have free access to this content
      Preface: Indium nitride and related alloys (page 976)

      Pierre Ruterana

      Version of Record online: 22 MAR 2012 | DOI: 10.1002/pssc.201260135

  8. EMRS-H – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. Materials, characterization and devices

      Comparison study of N- and In-polar {0001} InN layers grown by MOVPE (pages 977–981)

      Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina and M. Kneissl

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100093

    2. Investigation of the properties of In-related alloys by AFM (pages 982–985)

      Albert Minj, Daniela Cavalcoli and Anna Cavallini

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100092

    3. Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures (pages 986–988)

      Saurabh Pandey, Beatrice Fraboni, Daniela Cavalcoli, Albert Minj and Anna Cavallini

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100096

    4. Low loss EEL spectroscopy performed on InxAl1-xN layers grown by MOVPE: comparison between experiment and ab-initio calculations (pages 989–992)

      A. Letrouit, S. Kret, F. Ivaldi, J. F. Carlin, N. A. K. Kaufman, N. Grandjean and J. Górecka

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100178

    5. Structural, chemical, and electrical characterization of indium nitride produced by pulsed laser ablation (pages 993–996)

      Stefano Orlando, Antonio Santagata, Giovanni Pompeo Parisi, Luca Medici, Saulius Kaciulis, Alessio Mezzi, Alessandro Bellucci, Emilia Cappelli and Daniele Maria Trucchi

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100130

    6. Theory

      Determination of dislocation densities in InN (pages 997–1000)

      Sukru Ardali, Engin Tiras, Mustafa Gunes, Naci Balkan, Adebowale Olufunso Ajagunna, Eleftherios Iliopoulos and Alexandros Georgakilas

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100079

    7. Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties (pages 1001–1004)

      A. Molina-Sánchez, J. Segura-Ruiz, N. Garro, A. García-Cristóbal, A. Cantarero, F. Iikawa, C. Denker, J. Malindretos and A. Rizzi

      Version of Record online: 13 JAN 2012 | DOI: 10.1002/pssc.201100162

  9. EMRS-F – Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. You have free access to this content
  10. EMRS-F – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. ICNS-9 – Preface
    7. ICNS-9 – Contributed Articles
    8. EMRS-H – Preface
    9. EMRS-H – Contributed Articles
    10. EMRS-F – Preface
    11. EMRS-F – Contributed Articles
    1. Optical properties

    2. Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111) (pages 1011–1015)

      Daniel H. Rich, Ofer Moshe, Benjamin Damilano and Jean Massies

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100043

    3. Influence of neutron irradiation and annealing on the optical properties of GaN (pages 1016–1020)

      J. Rodrigues, M. Peres, M. J. Soares, K. Lorenz, J. G. Marques, A. J. Neves and T. Monteiro

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100200

    4. Suppression of defect-related luminescence in laser-annealed InGaN epilayers (pages 1021–1023)

      G. Tamulaitis, D. Dobrovolskas, J. Mickevičius, V. Kazlauskienė, J. Miškinis, E. Kuokštis, P. Onufrijevs, A. Medvids, J.-J. Huang, C.-Y. Chen, C.-H. Liao and C. C. Yang

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100169

    5. Zn doped GaN for single-photon emission (pages 1024–1027)

      Arne Behrends, Johannes Ledig, Mohamed Aid Mansur Al-Suleiman, Silke Peters, Ana Maria Racu, Waldemar Schmunk, Helmut Hofer, Stefan Kück, Andrey Bakin and Andreas Waag

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100141

    6. Growth and characterization

      Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001) (pages 1028–1031)

      R. M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier, T. Niendorf, H. J. Maier, K. Lischka, D. J. As and J. K. N. Lindner

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100174

    7. Cd doping of AlN via ion implantation studied with perturbed angular correlation (pages 1032–1035)

      P. Kessler, K. Lorenz, S. M. C. Miranda, R. Simon, J. G. Correia, K. Johnston, R. Vianden and the ISOLDE collaboration

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100207

    8. Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs (pages 1036–1039)

      Tong-Ho Kim, Maria Losurdo, Soojeong Choi, Inho Yoon, Giovanni Bruno and April Brown

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100072

    9. Growth and optical properties of gadolinium aluminum nitride thin films (pages 1040–1042)

      Yigang Chen, Xiaolei Shi, Jing Yang and Yiner Chen

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100164

    10. Electrical characterisation of GaN and AlGaN layers grown by plasma-assisted MBE (pages 1043–1047)

      V. Kolkovsky, L. Scheffler, M. Sobanska, K. Klosek, Z. R. Zytkiewicz and J. Weber

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100138

    11. Growth and structural, optical and electrical properties study of bulk GaN (pages 1048–1052)

      D. Gogova, G. Rudko and D. Siche

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100799

    12. Reduction of mechanical stresses in GaN/sapphire templates via formation of regular porous structure (pages 1057–1059)

      Ivan N. Ivukin, Vladislav E. Bougrov, Maxim A. Odnoblyudov and Alexey E. Romanov

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100170

    13. Ion implantation of Cd and Ag into AlN and GaN (pages 1060–1064)

      S. M. C. Miranda, P. Kessler, J. G. Correia, R. Vianden, K. Johnston, E. Alves and K. Lorenz

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100203

    14. Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers (pages 1065–1069)

      S. Fernández, F. B. Naranjo, O. de Abril and S. Valdueza-Felip

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100146

    15. Initial experiments in the migration enhanced afterglow growth of gallium and indium nitride (pages 1070–1073)

      Kenneth Scott A. Butcher, Dimiter Alexandrov, Penka Terziyska, Vasil Georgiev and Dimka Georgieva

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100209

    16. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen (pages 1074–1078)

      L. Monteagudo-Lerma, F. B. Naranjo, M. González-Herráez and S. Fernández

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100196

    17. Advanced devices

      Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate (pages 1083–1087)

      M. Mattalah, A. Soltani, J.-C. Gerbedoen, Az. Ahaitouf, N. Defrance, Y. Cordier and J.-C. De Jaeger

      Version of Record online: 29 FEB 2012 | DOI: 10.1002/pssc.201100211

    18. Electrical properties of MBE grown Si3N4–cubic GaN MIS structures (pages 1088–1091)

      A. Zado, K. Lischka and D. J. As

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100190

    19. Electromodulation spectroscopy of optical transitions and electric field distribution in GaN/AlGaN/GaN transistor heterostructures with various AlGaN layer thicknesses (pages 1092–1095)

      R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, M. Siekacz, G. Cywinski, P. Wolny and C. Skierbiszewski

      Version of Record online: 15 FEB 2012 | DOI: 10.1002/pssc.201100150

    20. Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures (pages 1096–1098)

      Stefanie Linkohr, Wilfried Pletschen, Vladimir Polyakov, Marcel Himmerlich, Pierre Lorenz, Stefan Krischok, Lutz Kirste, Stefan Müller, Oliver Ambacher and Volker Cimalla

      Version of Record online: 15 MAR 2012 | DOI: 10.1002/pssc.201100210

    21. Modelling and optimization of electric current spreading in III-nitride LEDs (pages 1105–1108)

      S. S. Suslov, V. E. Bougrov, M. A. Odnoblyudov and A. E. Romanov

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100171

    22. A new dual-material (DM) gate design to improve the subthreshold behavior of deep submicron GaN-MESFETs (pages 1109–1113)

      Nacereddine Lakhdar, Fayçal Djeffal and Zohir Dibi

      Version of Record online: 14 FEB 2012 | DOI: 10.1002/pssc.201100071

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