physica status solidi (c)

Cover image for Vol. 9 Issue 6

Special Issue: 13th International Conference on the Formation of Semiconductor Interfaces (ICFSI-13); see further papers in Phys. Status Solidi A 209, No. 4 (2012) • E-MRS 2011 Fall Meeting – Symposium B: Amorphous Nanostructure Materials; see further papers in Phys. Status Solidi A 209, No. 6 (2012) • 9th International Conference of Optics of Surfaces and Interfaces (OSI 9); see further papers in Phys. Status Solidi B 249, No. 6 (2012)

June 2012

Volume 9, Issue 6

Pages 1345–1520

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. You have free access to this content
      Cover Picture: Phys. Status Solidi C 6/2012

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssc.201290009

      Thumbnail image of graphical abstract

      Hexagonal boron nitride (h-BN), a wide band-gap semiconductor, is well known to have a crystal structure which is very close to that of graphite. Because of the excellent properties, such as thermal and chemical stability, and negative electron affinity, h-BN is expected, along with graphene, to be used as a coating material on field emission and new nanodevices. The formation of h-BN ultrathin monolayer-level films has been studied for various metal substrates, however, the method has not been developed well for semiconductor substrates which are more important than metals with regard to the applications of electronic devices. In this article, Shimoyama et al. on pp. 1450 attempted to form h-BN ultrathin films on Si(111) using chemical vapor deposition with borazine. They characterized the films by X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (NEXAFS). The cover image shows NEXAFS spectra at the boron K-edge. Spectral shape and clear polarization dependence of the spectra indicate that a well-oriented h-BN monolayer was formed by deposition at 1000 °C and post annealing at 1200 °C. The image also illustrates a schematic picture of a h-BN monolayer on Si(111). The NEXAFS spectra were almost identical to those of bulk h-BN. This suggests that the electronic structure of the h-BN ultrathin film was scarcely modified and that the thin film formed an abrupt interface on Si(111).

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. You have free access to this content
      Back Cover: Phys. Status Solidi C 6/2012

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssc.201290010

      Thumbnail image of graphical abstract

      Polarization domains of ferroelectric surfaces can be manipulated at the nanoscale by an external electric field, in order to tailor the surface reactivity for specific applications. Indeed, different research groups have recently demonstrated polarization-dependent physical and chemical surface phenomena. The cover picture shows the potential energy surface experienced by hydroxyl (upper part) and hydrogen (lower part) radicals at the positive (left-hand side) and negative (right-hand side) LiNbO3(0001) surfaces investigated by Hölscher et al. in their article on pp. 1361. By means of first-principles calculations in the framework of the density functional theory, the authors show that adsorption energy, configuration and adsorbate mobility are strongly polarization dependent. Ferroelectric chemical sensors such as gas detectors can thus be envisioned, where adsorption switches the polarization of a thin ferroelectric gate of a field-effect device.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. You have free access to this content
      Issue Information: Phys. Status Solidi C 6/2012

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssc.201290011

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. You have free access to this content
      Contents: Phys. Status Solidi C 6/2012 (pages 1345–1349)

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssc.201260141

  5. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. You have free access to this content
      Preface: Phys. Status Solidi C 6/2012 (pages 1350–1351)

      Yannick Dappe, Pavel Jelínek and Vladimír Cháb

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssc.201260142

  6. ICFSI-13 – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. Contributed articles

      Sol-gel ZnO films crystallized under an electric field and the ZnO/Si heterojunction characteristic (pages 1352–1355)

      Kazunori Abe, Takao Komiyama, Yasunori Chonan, Hiroyuki Yamaguchi and Takashi Aoyama

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100659

    2. Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures (pages 1356–1360)

      Yujin Hori, Chihoko Mizue and Tamotsu Hashizume

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100656

    3. Adsorption of OH and H at the LiNbO3(0001) surface (pages 1361–1365)

      R. Hölscher, S. Sanna and W. G. Schmidt

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100534

    4. Thickness and annealing dependent morphology changes of iron silicide nanostructures on Si(001) (pages 1366–1369)

      György Molnár, László Dózsa, Zofia Vértesy, Zsófia Baji and Gábor Pető

      Article first published online: 23 MAR 2012 | DOI: 10.1002/pssc.201100662

    5. Charging behaviour of MNOS structures with embedded Ge nanocrystals (pages 1370–1373)

      Zsolt J. Horváth, Károly Zs. Molnár, György Molnár, Péter Basa, Tamás Jászi, Andrea E. Pap, Rita Lovassy and Péter Turmezei

      Article first published online: 23 MAR 2012 | DOI: 10.1002/pssc.201100668

    6. Carbon diffusion and reactivity in Mn5Ge3 thin films (pages 1374–1377)

      Matthieu Petit, Minh Tuan Dau, Guillaume Monier, Lisa Michez, Xavier Barre, Aurelie Spiesser, Vinh Le Thanh, Alain Glachant, Cyril Coudreau, Luc Bideux and Christine Robert-Goumet

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100448

    7. Graphene and graphane functionalization with hydrogen: electronic and optical signatures (pages 1378–1383)

      A. I. Shkrebtii, E. Heritage, P. McNelles, J. L. Cabellos and B. S. Mendoza

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100705

    8. Optical and electrical properties of sputtered InNO thin films (pages 1384–1387)

      Marina Sparvoli, Ronaldo D. Mansano, Luis S. Zambom and José F. D. Chubaci

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100518

    9. The structural and material properties of Cu(In,Ga)Se2 thin films (pages 1388–1391)

      Ya-Fen Wu, Hung-Pin Hsu, Jen-Cheng Wang and Hui-Ying Chen

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100686

    10. Photocarrier drift mobility in ZnO at low temperature (pages 1392–1395)

      Hiroyuki Yamaguchi, Yousuke Ishidsuka, Takao Komiyama, Yasunori Chonan and Takashi Aoyama

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100660

    11. Heterojunction characteristics of ZnO and CuO substrates formed by direct bonding (pages 1396–1399)

      Hiroshi Abe, Masahide Fujishima, Takao Komiyama, Yasunori Chonan, Hiroyuki Yamaguchi and Takashi Aoyama

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100666

    12. Analysis of the depletion layers and conduction band barrier at the n-ZnSe/n-GaAs interface for different growth start procedures (pages 1400–1403)

      U. Bass, J. Geurts, A. Frey, S. Mahapatra, C. Schumacher and K. Brunner

      Article first published online: 23 MAR 2012 | DOI: 10.1002/pssc.201100679

    13. Adsorption of 5,10,15,20-tetrakis (4-bromophenyl)porphyrin on germanium(001) (pages 1404–1407)

      N. C. Berner, Y. N. Sergeeva, N. N. Sergeeva, M. O. Senge, A. A. Cafolla and I. T. McGovern

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100650

    14. Aqueous bromine etching of InP: a specific surface chemistry (pages 1408–1410)

      A. Causier, M. Bouttemy, I. Gérard, D. Aureau, J. Vigneron and A. Etcheberry

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100681

    15. Quantum Hall effect in bilayer and trilayer graphene (pages 1411–1414)

      C. Cobaleda, F. Rossella, S. Pezzini, E. Diez, V. Bellani, D. K. Maude and P. Blake

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100657

    16. Formation of ultra-thin nitridation layer on Si(100) by hot-wire method (pages 1415–1417)

      Haruki Inao and Akira Izumi

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100548

    17. Challenge for STM observation of dopant activation process on Si(001): in-situ ion irradiation and hydrogenation (pages 1418–1422)

      Takefumi Kamioka, Fumiya Isono, Takahiro Yoshida, Iwao Ohdomari and Takanobu Watanabe

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100684

    18. Synthesis and characterization of Pt-TiO2 nanofibers (pages 1423–1426)

      Deuk Yong Lee and Nam-Ihn Cho

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100221

    19. Titanium nitride as promising gate electrode for MOS technology (pages 1427–1430)

      Lucas P. B. Lima, Milena A. Moreira, José A. Diniz and Ioshiaki Doi

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100506

    20. Micro-Raman spectroscopy as a tool to analyze mechanical stress in nano-structured diamond-like carbon films (pages 1431–1434)

      Ronaldo Domingues Mansano and Ana Paula Mousinho

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100667

    21. Protein-semiconductor quantum dot hybrids for biomedical applications (pages 1435–1438)

      Herman Mansur, Alexandra Mansur and Juan González

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100251

    22. Biochip applications of DLC films on a resin material (pages 1439–1442)

      Satoshi Murata, Shin Ito, Jun Mizuno, Kenji Hirakuri, Hitoshi Sakamoto, Sadaaki Masuko, Keisuke Sato, Naoki Fukata, Fukuo Shizuku and Shuichi Shoji

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100655

    23. Stable structure of di-amino-terphenyl molecule on Si(001) surfaces (pages 1443–1445)

      Masato Oda

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100672

    24. Synthesis and characterization of CdxMn1-xS magnetic nanoparticles stabilized with poly(vinyl alcohol) for biomedical applications (pages 1446–1449)

      Vanessa Schatkoski, Alexandra Mansur, Juan González and Herman Mansur

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100292

    25. Formation of boron-nitride ultra-thin films on Si(111) (pages 1450–1453)

      Iwao Shimoyama, Yuji Baba, Tetsuhiro Sekiguchi and Krishna G. Nath

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100665

    26. Preparation and characterization of high-k aluminium nitride (AlN) thin film for sensor and integrated circuits applications (pages 1454–1457)

      J. F. Souza, M. A. Moreira, I. Doi, J. A. Diniz, P. J. Tatsch and J. L. Gonçalves

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100461

    27. Origins of visible-light emissions in porous silicon (pages 1458–1461)

      Nacir Tit, Zain H. Yamani, Giovanni Pizzi and Michele Virgilio

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssc.201100325

    28. Structure and luminescence characteristics of ZnS nanodot array in porous anodic aluminum oxide (pages 1462–1465)

      Rishat Valeev, Eduard Romanov, Artemiy Beltukov, Vladislav Mukhgalin, Ilya Roslyakov and Andrey Eliseev

      Article first published online: 15 MAR 2012 | DOI: 10.1002/pssc.201100677

  7. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. You have free access to this content
      Preface: Phys. Status Solidi C 6/2012 (pages 1466–1467)

      Sergey Gurevich and Jean-Paul Kleider

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssc.201260143

  8. EMRS-B – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. Light emission

      Shell model for REOx nanoclusters in amorphous SiO2: charge trapping and electroluminescence quenching (pages 1468–1470)

      S. Tiagulskyi, A. Nazarov, I. Tyagulskii, V. Lysenko, L. Rebohle, J. Lehmann and W. Skorupa

      Article first published online: 23 APR 2012 | DOI: 10.1002/pssc.201100780

    2. Influence of oxygen on light emission from amorphous silicon nanoclusters (pages 1471–1473)

      Olga S. Yeltsina, Dmitrii A. Andronikov, Alexei V. Kukin, Julia S. Vainshtein and Olga M. Sreseli

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100751

    3. Electrical properties

      Percolation effect in structures with amorphous and crystalline silicon nanoclusters (pages 1474–1476)

      Denis M. Zhigunov, Andrey V. Emelyanov, Victor Yu. Timoshenko, Victor I. Sokolov and Vladimir N. Seminogov

      Article first published online: 23 APR 2012 | DOI: 10.1002/pssc.201100819

    4. Correlation of nanostructure and charge transport properties of oxidized a -SiC:H films (pages 1477–1480)

      S. O. Gordienko, A. N. Nazarov, A. V. Vasin, A. V. Rusavsky and V. S. Lysenko

      Article first published online: 23 APR 2012 | DOI: 10.1002/pssc.201100790

    5. Modeling of capacitance spectroscopy of (p) a-Si:H/(n) c-Si interfaces (pages 1481–1483)

      Olga Maslova, Aurore Brézard-Oudot, Wilfried Favre, José Alvarez, Alexander Gudovskikh, Eugene Terukov and Jean-Paul Kleider

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100761

    6. Materials technology and structure formation

      Amorphous-to-microcrystalline transition in a-Si:H under hydrogen plasma: Optical and electrical detection (pages 1484–1486)

      Aomar Hadjadj, Fadila Larbi, Nans Pham and Pere Roca i Cabarrocas

      Article first published online: 23 APR 2012 | DOI: 10.1002/pssc.201100755

    7. Crystallization of hydrogenated amorphous-nanocrystalline silicon films under high-pressure annealing (pages 1487–1489)

      Ida Tyschenko, Vladimir Volodin and Andrzej Misiuk

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100568

    8. In situ study of hydrogen diffusion in a-Si:H based junctions exposed to hydrogen plasma (pages 1490–1492)

      Fadila Larbi, Samira Fellah, Aomar Hadjadj, Pere Roca i Cabarrocas and Jamal Dine Sib

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100754

    9. Cr induced nanocrystallization of a -Si thin films: its mechanism (pages 1493–1495)

      Md. Ahamad Mohiddon, K. Lakshun Naidu, G. Dalba, F. Rocca and M. Ghanashyam Krishna

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100624

    10. Solar cells

    11. Ab-initio study of silicon nanowires (pages 1499–1500)

      Smagul Karazhanov, Erik Marstein and Arve Holt

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100758

    12. Promising amorphous materials

      Secondary electron emission yield (SEY) in amorphous and graphitic carbon films prepared by PLD (pages 1501–1503)

      M. Alberti, R. Ayouchi, S. R. Bhattacharyya, N. Bundaleski, A. Moutinho, O. Teodoro, L. Aguilera, M. Taborelli and R. Schwarz

      Article first published online: 23 APR 2012 | DOI: 10.1002/pssc.201100813

    13. Fabrication and properties of nanocrystalline Zn-Ir-O thin films (pages 1504–1506)

      Jakub Grochowski, Eliana Kamińska, Anna Piotrowska, Elżbieta Dynowska, Piotr Dłużewski, Jan Dyczewski, Alicja Szczepańska and Piotr Kaźmierczak

      Article first published online: 23 APR 2012 | DOI: 10.1002/pssc.201200001

  9. OSI – Contributed Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Preface
    7. ICFSI-13 – Contributed Articles
    8. Preface
    9. EMRS-B – Contributed Articles
    10. OSI – Contributed Articles
    1. Nano-droplet formation in polymer dispersed liquid crystals (pages 1515–1520)

      M. Torres-Cisneros, Patrick LiKamWa, D. May-Arrioja, O. G. Ibarra-Manzano, H. Plascencia-Mora, E. Aguilera-Gómez, J. G. Aviña-Cervantes, J. J. Sanchez-Mondragon, Q. Song, J. A. Andrade-Lucio and R. Guzmán-Cabrera

      Article first published online: 13 APR 2012 | DOI: 10.1002/pssc.201100749

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