Hexagonal boron nitride (h-BN), a wide band-gap semiconductor, is well known to have a crystal structure which is very close to that of graphite. Because of the excellent properties, such as thermal and chemical stability, and negative electron affinity, h-BN is expected, along with graphene, to be used as a coating material on field emission and new nanodevices. The formation of h-BN ultrathin monolayer-level films has been studied for various metal substrates, however, the method has not been developed well for semiconductor substrates which are more important than metals with regard to the applications of electronic devices. In this article, Shimoyama et al. on pp. 1450 attempted to form h-BN ultrathin films on Si(111) using chemical vapor deposition with borazine. They characterized the films by X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (NEXAFS). The cover image shows NEXAFS spectra at the boron K-edge. Spectral shape and clear polarization dependence of the spectra indicate that a well-oriented h-BN monolayer was formed by deposition at 1000 °C and post annealing at 1200 °C. The image also illustrates a schematic picture of a h-BN monolayer on Si(111). The NEXAFS spectra were almost identical to those of bulk h-BN. This suggests that the electronic structure of the h-BN ultrathin film was scarcely modified and that the thin film formed an abrupt interface on Si(111).